环糊精柱结合液质联用方法测定果蔬中烯酰吗啉异构体残留量

基于乙二胺-β-环糊精的包结分离作用,建立了一种快速、简便的检测5种果蔬（黄瓜、葡萄、莴苣、茄子和土豆）中烯酰吗啉顺反-异构体的LC/MS方法。果蔬中残留的烯酰吗啉异构体用QuEChERS方法提取,然后用自组装的N-丙基乙二胺（PSA）、石墨化炭黑（GCB）和磁性四氧化三铁纳米粒子（MNPS）复合物进行快速净化。由于乙二胺-β-环糊精柱能与顺、反烯酰吗啉异构体形成稳定性不同的包结物,环糊精柱能高效分离几何异构体,结合液质联用技术,通过选择离子监测灵敏地测定5种果蔬中的顺、反烯酰吗啉异构体残留量。考察了不同柱温对烯酰吗啉异构体分离度的影响以及电喷雾离子化等优化条件。采用0.1%甲酸-乙腈（1090,v/v）作流动相,流速0.5mL·min^-1,在20℃的柱温下,烯酰吗啉顺反异构体在环糊精柱上的分离度（Rs）为2.2,分析时间在10min内。烯酰吗啉顺反异构体的质谱定量离子m/z 388.20->301,Q1电压是-18ev,碰撞能量（CE）-21ev以及Q3电压是-20ev,碰撞能量（CE）-32ev。对于反式-和顺式-烯酰吗啉分别在0.125²0μg·kg^-1和0.375⁶0μg·kg^-1范围存在良好的线性关系（r>0.999）。它们的最低检出限（LODs,S/N=3）分别为0.035⁰.066和0.015⁰.069μg·kg^-1。基质样品的加标回收率均在76%¹09.0%之间,对反式-烯酰吗啉的日内精密度和日间精密度在3.2%⁸.2%和2.9%⁹.9%范围,而对于顺式-烯酰玛琳的日内精密度和日间精密度在1.1%⁶.9%和2.3%¹0.1%范围。该方法简便、快速和准确,适用于果蔬中烯酰吗啉顺、反异构体的含量测定。     

偏心对汇聚激波诱导的RM不稳定性影响的数值研究

数值研究汇聚激波与四种形状（圆形、小振幅单模、大振幅单模和正方形）的二维气柱界面相互作用,激波汇聚中心与界面同心和不同心（即偏心）时Richtmyer-Meshkov（RM）不稳定性的发展规律,重点考察界面中心的压力及混合区面积在两种情况下随时间的变化.数值方法使用VAS2D程序,该方法采用有限体积法结合网格自适应技术,能够达到时间和空间的二阶精度.结果表明,偏心情况下RM不稳定性是其在同心情况下的扰动和偏心小扰动叠加的结果.在本文采用的偏心程度下（20%）,偏心对于圆形无扰动界面发展的影响主要表现在后期界面出现微小扰动结构;而对于单模和正方形这种原本有扰动的界面,偏心使扰动结构呈现不对称及扭曲,同时也影响了界面中心压力和混合区面积,因而加剧了不稳定性的发展.     

用于飞秒时间分辨分子反应动力学研究的千赫兹离子/电子速度成像仪

A new velocity map imaging spectrometer is constructed for molecular reaction dynamics studies using time-resolved photoelectron/ion spectroscopy method.By combining a kHz pulsed valve and an ICCD camera,this velocity map imaging spectrometer can be run at a repetition rate of 1 kHz,totally compatible with the fs Ti:Sapphire laser system,facilitating time-resolved studies in gas phase which are usually time-consuming.Time-resolved velocity map imaging study of NH₃ photodissociation at 200 nm was performed and the time-resolved total kinetic energy release spectrum of H+NH₂ products provides rich information about the dissociation dynamics of NH₃.These results show that this new apparatus is a powerful tool for investigating the molecular reaction dynamics using time-resolved methods.     

Sasobit对SBS改性沥青性能的影响研究

为揭示温拌剂Sasobit对SBS改性沥青性能的影响,本文分别进行了不同温拌剂含量沥青的三大指标、布氏粘度、粘温扫描、动态剪切流变和低温弯曲流变等试验。结果表明:Sasobit使SBS沥青软化点降低,虽然其温度敏感性增大,但对针入度和延度影响不大。温拌沥青在105℃以上高温区粘度明显下降,这对施工有利;但随温度的降低,粘度却比原样提高,这对实际使用有利。依据三大指标和粘度试验结果,本文提出SBS沥青的Sasobit最佳掺量为3%。粘温扫描曲线显示,含Sasobit沥青粘度增大,特别是在75℃以下的温度区域,这对夏季抗车辙有利。此外,温拌剂Sasobit使SBS沥青的PG分级的高温等级提高,而对低温等级影响不大。     

β-delayed neutron decay of 21N

The β-delayed neutron and γ spectra of neutron-rich nucleus ²¹N using β-γ and β-n coincidence measurements were presented in this paper. Thirteen new neutron groups ranging from 0.28 MeV to 4.98 MeV and with a total branching ratio 88.7±4.2% were observed. One γ transition among the excited states of ²¹O, and four γ transitions among the excited states of ²⁰O were identified in the β decay chain of ²¹N. The ungated half-life of 83.8±2.1 ms was also determined for ²¹N.     

Nitrogen Dioxide Sensing Properties and Mechanism of Copper Phthalocyanine Film

Copper phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface morphology is characterized by SEM. A silicon-based copper phthalocyanine film gas sensor for NO2 detection is fabricated by MEMS technology. The results show that the resistance and sensitivity of copper phthalocyanine film decrease obviously as the NO2 concentration increases from Oppm to lOOppm. However, the sensitivity nearly keeps a constant of O. 158 between 30 ppm and 70 ppm. The best working temperature of the gas sensor is 90℃ for NO2 gas concentrations of lOppm, 20ppm and 30ppm, which is much lower than that of general metal oxide gas sensor.     

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator

An improved vertical power double-diffused metal–oxide–semiconductor(DMOS) device with a p-region(P1) and high-κ insulator vertical double-diffusion metal–oxide–semiconductor(HKP-VDMOS) is proposed to achieve a better performance on breakdown voltage(BV)/specific on-resistance(Ron,sp) than conventional VDMOS with a high-κ insulator(CHK-VDMOS).The main mechanism is that with the introduction of the P-region,an extra electric field peak is generated in the drift region of HKP-VDMOS to enhance the breakdown voltage.Due to the assisted depletion effect of this p-region,the specific on-resistance of the device could be reduced because of the high doping density of the N-type drift region.Meanwhile,based on the superposition of the depleted charges,a closed-form model for electric field/breakdown voltage is generally derived,which is in good agreement with the simulation result within 10% of error.An HKP-VDMOS device with a breakdown voltage of 600 V,a reduced specific on-resistance of 11.5 m?·cm~2 and a figure of merit(FOM)(BV~2/Ron,sp)of 31.2 MW·cm~(-2) shows a substantial improvement compared with the CHK-VDMOS device.     

应变调控单层氧化锌能带结构的第一性原理研究

采用基于密度泛函理论的第一性原理计算对单层ZnO薄膜能带结构的应变调控进行了研究.计算结果表明:沿着之字形方向的压缩应变和扶椅形方向的拉伸应变对薄膜带隙的调控都是线性的,而且带隙调控的范围最大;相反地,在沿着之字形方向的拉伸应变和扶椅形方向的压缩应变的调控下,带隙则呈现出非线性的变化.对于双轴应变的拉伸与压缩,带隙的变化都是非线性的.这种通过不同的应变加载方式来实现对带隙不同程度的调控,对ZnO薄膜在光学和催化等领域的应用具有重要的指导意义.     

一种光谱分辨率可调的新型空间调制傅里叶变换光谱仪

调整光谱仪的光谱分辨率,可使光谱仪在满足不同目标测量需求的同时,减少数据采集、处理和存储的时间,提高仪器的整体性能。为克服传统傅里叶变换光谱仪的光谱分辨率固定的缺点,提出了一种分辨率可调的空间调制傅里叶变换光谱仪。介绍了该新型光谱仪及其干涉仪的工作原理,利用光线追迹的方法推导了光程差和横向剪切量的计算公式,并分析了新型干涉仪的光程等效模型。在此基础上,分析了光谱分辨率的调节原理。结果表明,该光谱分辨率可调的新型空间调制傅里叶变换光谱仪克服了传统光谱仪分辨率固定、稳定性差等缺点,具有分辨率可调、高稳定性、结构灵活和易于装调等特点。该研究内容为分辨率可调的干涉光谱仪的设计提供了理论基础,扩展了傅里叶变换光谱仪的实用范围。     

内爆炸下钢管混凝土结构变形与破坏的试验分析及数值模拟

钢管混凝土结构由于具有良好的力学性能和低经济成本而受到广泛应用,因此对它的研究很多,但对它在爆炸作用下尤其是内爆炸作用下的研究很少,故分析钢管混凝土结构在内爆炸下的变形与破坏具有重要意义.本文通过试验与数值模拟方法,分析了内爆炸下钢管混凝土结构在具有二条预制狭缝时的变形与破坏情形.结果表明,钢管变形主要发生在靠近狭缝处,变形大小随药量的增加而增大,最终导致钢管在狭缝两端出现约45°方向的裂纹,引起钢管混凝土剪切破坏.