Synthesis and optoelectronic properties of silole‐containing polyfluorenes with binary structures

2,5‐Bis(2‐bromofluorene‐7‐yl)silole was prepared by a modified one‐pot synthesis with a reverse addition procedure, from which novel silole‐containing polyfluorenes with binary random and alternating structures (silole contents between 4.5 and 25% and high M_w up to 509 kDa were successfully synthesized. The well‐defined repeating unit of the alternating copolymer comprises a terfluorene and a silole ring. Optoelectronic properties including UV absorption, electrochemistry, photoluminescence (PL), and electroluminescence (EL) of the copolymers were examined. The different excitation energy transfers from fluorene to silole of the copolymers in solution and in the solid state were compared. The films of the copolymers showed silole‐dominant green emissions with high absolute PL quantum yields up to 83%. EL devices of the copolymers with a configuration of ITO/PEDOT/copolymer/Ba/Al displayed exclusive silole emissions peaked at around 543 nm and the highest EL efficiency was achieved with the alternating copolymer. Using the alternating copolymer and poly(9,9‐dioctylfluorene) as the blend‐type emissive layer, a maximum external quantum efficiency of 1.99% (four times to that of the neat film) was realized, which was a high efficiency so far reported for silole‐containing polymers. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 756–767, 2007     

Generalized optical logic elements - GOLEs

A Generalized Optical Logic Element or GOLE is device that performs any of the 16 Boolean logic operations on signals in an optical beam with very fast switching among functions. The advantages of a generalized or universal gate in manufacturing are obvious. Extremely flexible functioning becomes possible if the GOLE functionality is switched in response to earlier computations. Likewise Field Programmable Gate Arrays or FPGAs can be used to fix the GOLE functions, making one of the most powerful and flexible processor units ever designed - called a Field GOLE. Such systems can be made in bulk optics to utilize Spatial Light Modulator or SLM capabilities, but integrated optics on silicon will be the choice for most applications. GOLEs can be generalized in several ways to become Fredkin gates and generalized Fredkin gates. They can also be cascaded similarly to electronic gates.     

脉冲激光偏振方向对氮分子高次谐波的影响——基于含时密度泛函理论的模拟

采用含时密度泛函方法,结合赝势模型和电子交换相关作用的广义梯度近似,模拟了氮分子在超强飞秒激光脉冲作用下的高次谐波产生现象,并研究了激光脉冲偏振方向对氮分子高次谐波的影响.结果表明氮分子的高次谐波谱具有典型原子谐波谱的特征;谐波谱强度随着θ(激光偏振方向与分子轴向夹角)的增大而减小.这与J.Itatanl在Nature上报道的实验结果基本一致.     

单脉冲和多脉冲飞秒激光对单层光学薄膜的损伤

 利用掺钛的蓝宝石飞秒激光系统输出的单脉冲和多脉冲飞秒激光(中心波长800 nm，脉宽50 fs，靶面聚焦直径Ф 40 μm)，分别对BK7玻璃基底上厚约500 nm的单层HfO₂和单层ZrO₂薄膜进行辐照，得到了这两种薄膜在1-on-1和1 000-on-1测试方法下的激光损伤阈值。实验发现，两种方法下HfO₂单层膜的阈值均比ZrO₂单层膜的阈值高。从简化的Keldysh多光子离化理论出发，认为HfO₂薄膜材料的带比ZrO₂的宽是导致上述结果的主要原因。同时，同一种薄膜的多脉冲下的阈值比单脉冲下的低，原因是多脉冲下，飞秒激光对光学薄膜的损伤存在累积效应。     

排列形状及阵列数目对纳米导线阵列场发射性能的影响

为了进一步研究纳米导线阵列的排列形状以及阵列数目对其场发射行为的影响，利用镜像悬浮球模型对正方形以及六边形排列的纳米导线阵列的场发射行为进行计算与模拟，近似的得到纳米导线阵列的场发射增强因子满足如下的变化趋势：β=h/ρ(1/1+W)+1/2(1/1+W)²+3,其中h为纳米导线的高度，ρ为纳米导线的半径，W是以R为自变量的函数，R为纳米导线阵列的间距.结果显示纳米导线阵列的排列形状对其场发射性能的影响较小，而阵列间距则是影响场发射性能的关键因素：当R<R₀时，场发射增强因子随着阵列间距的减小而急剧减小；当R>R₀时，场发射增强因子基本不变，其中R₀为导线阵列场发射的最佳间距.进一步研究表明改变纳米导线阵列的数目基本不会改变阵列的场发射性能随间距的变化趋势，但是随着阵列数目的增加，R₀会有一定程度的减小，场发射增强因子也会降低. 关键词： 纳米导线 场发射 增强因子 阵列数目     

300kVA高温超导变压器电流引线漏热损耗的测量

电流引线是高温超导变压器的主要外部漏热来源,它的漏热量直接影响了超导变压器的经济性能,因此,引线的设计与漏热测量一直备受关注。文中构建了一个实验方案,运用量热法测量低压引线的漏热,并将试验结果与仿真预期值进行了对比和分析,从而验证了仿真设计的正确性。     

光学相干控制中脉冲光束等相面的实时测控

描述了飞秒脉冲基频光、倍频光光束位相差对相干控制光电流注入的控制作用，提出一种控制基频光、倍频光在全光孔径干涉光场内的等相面保持一致的实验方案，制作了一套相位差稳定自动控制系统，并应用于光学相干控制光电流实验中，获得较好的实时控制结果.     

重稀土高氯酸盐甲基苯甲酰甲基亚砜配合物的合成及Tb3+的发光

合成了重稀土高氯酸盐甲基苯甲酰甲基亚砜配合物RE(ClO4)3·L5·C2H5OH(RE=Gd,Tb,Dy,Tm,Yb;L=C6H5COCH2SOCH3).经元素分析、稀土络合滴定、摩尔电导及热重分析确定了配合物的组成,测定了配体及配合物的IR谱、1H NMR及铽配合物的磷光光谱、荧光激发和发射光谱,根据荧光发射光谱数据计算了铽配合物的各能级值.