Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

Two series of p-GaN films grown at different temperatures are obtained by metal organic chemical vapor deposition(MOCVD). And the different variation behaviors of resistivity with growth condition for high- temperature(HT)-grown and low-temperature(LT)-grown p-GaN films are investigated. It is found that the resistivity of HT-grown p-GaN film is nearly unchanged when the NH_3 flow rate or reactor pressure increases. However, it decreases largely for LT-grown p-GaN film.These different variations may be attributed to the fact that carbon impurities are easy to incorporate into p-GaN film when the growth temperature is low. It results in a relatively high carbon concentration in LT-grown p-GaN film compared with HT-grown one. Therefore, carbon concentration is more sensitive to the growth condition in these samples, ultimately,leading to the different variation behaviors of resistivity for HT- and LT-grown ones.     

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

In this study, we investigate the single-event transient(SET) characteristics of a partially depleted silicon-on-insulator(PDSOI) metal-oxide-semiconductor(MOS) device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor(p-BJT) effect by performing both a laser test and simulations.     

基于离子束溅射大口径光学元件平坦化层均匀性研究

针对大口径光学元件溅射沉积膜厚不均匀的问题,采用离子束溅射平坦化层来改善光学元件表面粗糙度.利用膜厚检测仪测出光学元件沉积面上的中心区域以及各边缘区域的膜厚值,计算离子束在光学元件中心与边缘驻留时间比,并通过MATLAB拟合驻留时间分布规律,根据所得的数据进行逐级修正.实验结果表明,当驻留时间比优化为-26.6%时,可以实现在直径300～600mm大口径的光学元件上均匀镀膜,以熔石英表面上镀硅膜为例,溅射沉积6h,表面膜厚为212.4±0.3nm,薄膜均匀性达到0.4%.     

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p-i-n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoelectric polariza- tion in the i-region could be totally shielded when the Mg-induced net acceptor doping concentration is sufficiently high. The polarization-induced potential barriers are reduced and the short circuit current density is remarkably increased from 0.21 mA/cm2 to 0.95 mA/cm2 by elevating the Mg doping concentration. The carrier lifetime determined by defect density of i-InGaN also plays an important role in determining the photovoltaic properties of solar cell. The short circuit current density severely degrades, and the performance of InGaN solar cell becomes more sensitive to the polarization when carrier lifetime is lower than the transit time. This study demonstrates that the crystal quality of InGaN absorption layer is one of the most important challenges in realizing high efficiency InGaN solar cells.     

退火温度和退火气氛对Ni/Au与p-GaN之间欧姆接触性能的影响

研究了不同退火温度和气氛对Ni/Au与p-GaN之间欧姆接触性能的影响. 采用圆形传输线模型方法得到不同退火温度和不同退火气氛下的比接触电阻率. 结果表明, 较适宜的退火温度为500 ℃左右, 退火温度太高或太低都会导致比接触电阻率的增大; 较适宜的退火气氛为适量含氧的氮气气氛, 且氧气含量对比接触电阻率大小的影响并不显著. 经过对退火条件的优化, 得到的比接触电阻率可达7.65×10^-4 Ω·cm². 关键词： p-GaN 欧姆接触 圆形传输线模型 快速热退火     

Existence and asymptotic estimates of periodic solutions of El Nio mechanism of atmospheric physics

This paper is devoted to studying the El Nin o mechanism of atmospheric physics. The existence and asymptotic estimates of periodic solutions for its model are obtained by employing the technique of upper and lower solution, and using the continuation theorem of coincidence degree theory.     

The periodic solution to Nino-Southern the model for the El oscillation

A class of oscillator of the EI Nifio-Southern oscillation model is considered. Using Mawhin＇s continuation theorem, a result on the existence of periodic solutions for ENSO model is obtained.     

中立型对数种群模型正周期解的存在性新结果

运用k-集压缩算子的拓扑度抽象连续定理,研究了如下一类高阶微分方程的周期解存在性问题x(m)(t)= r(t)-a(t)x(t-σ)-b(t)x(m)(t-τ).并将其应用于研究一类中立型对数种群模型dN/dt= N(t) [r(t)-a(t) In N(t-σ-b(t)d/(dt)In N(t-τ)]的正周期解存在性...     

大气SO2柱总量遥感反演算法比较分析及验证

卫星遥感技术已成为城市污染气体SO₂监测和全球火山活动监测及预警的重要手段. 目前新的PCA (principal component analysis)算法有效减小了反演数据噪声, 并替代之前业务算法BRD (band residual difference)用于边界层SO₂柱总量产品的反演. 然而, 目前对PCA算法反演产品精度的评价和验证研究较少, 缺少与BRD算法产品进行长时间序列的比较以评估算法适用性, 尤其在中国大气污染重点城市区域. 本文利用地基多轴差分吸收光谱仪(MAX-DOAS)观测及多尺度空气质量模式系统(RAMS-CMAQ)大气化学模式模拟等数据, 评估PCA和BRD 反演算法的精度及误差. 另外, 选取洁净海洋地区、中国大气污染重点城市区域和高浓度火山喷发三种情况, 比较分析PCA 与BRD SO₂ 总量的时空格局变化差异及对不同SO₂总量下的适用性, 并对两种算法反演不确定性进行分析讨论. 结果表明, 在中国京津冀、珠江三角洲和长江三角洲区域, PCA SO₂总量反演值低于BRD, BRD反演结果更接近于地基的MAX-DOAS观测值, 冬季BRD和PCA SO₂总量值低于RAMS-CMAQ 模拟结果, 夏季7月和8月BRD SO₂总量值高于RAMS-CMAQ 模拟结果. 在SO₂总量接近于0 值的洁净海洋地区, PCA 算法产品噪声水平低于BRD算法, 但PCA 反演结果整体偏差大于BRD算法. 在高浓度火山喷发情况下, 当SO₂总量大于25 DU时BRD SO₂总量反演值低于PCA, 且随着SO₂ 总量增大, 两种算法反演值差异亦增大. 该研究对于OMI (Ozone Monitering Instrument) SO₂产品的应用具有重要的参考价值, 通过分析不同反演算法的差异及对其不确定性追因, 对于算法改进研究也具有重要的科学意义.     

酸性染料分子表面印迹材料的设计与制备及其分子识别特性研究

本文使用"接枝交联聚合与印迹过程同步进行"的分子表面印迹方法,以阳离子单体丙烯酰氧乙基三甲基氯化铵(DAC)为功能单体,以活性艳红X-3B(RBR)为模板分子,制备了酸性染料分子表面印迹材料,并考察了印迹材料的分子识别性能。在水溶液中,凭籍强静电相互作用与阳离子-π相互作用,阳离子单体DAC自动地结合在模板RBR分子周围,在氨基/过硫酸盐表面引发体系作用下,DAC及交联剂N,N'-亚甲基双丙烯酰胺(MBA)在硅胶微粒表面发生接枝交联聚合,制得了酸性染料分子表面印迹材料MIP-PDAC/SiO2。该分子表面印迹材料对RBR分子具有高度的识别选择性,相对于结构与RBR相似的活性黄X-RG和活性嫩黄X-6G两种酸性染料,MIP-PDAC/SiO2对RBR的识别选择性系数分别为8.1和8.9。