量子点场效应单光子探测器二维电子气载流子浓度研究

设计了一种基于场效应晶体管的量子点场效应单光子探测器(quantum dot field effect transistor,QDFET),建立了二维电子气(two-dimensional electron gas,2DEG)的薛定谔方程和泊松方程,通过对薛定谔方程和泊松方程的自洽求解,对2DEG的载流子浓度进行了模拟。模拟结果显示,AlGaAs的Al组分、δ掺杂层的掺杂浓度以及隔离层的厚度对于2DEG的载流子浓度均有影响。为了使2DEG具有较高的载流子浓度,AlGaAs的Al组分应为0.2~0.4,δ掺杂浓度应为6~8×10~(13)/cm~2,隔离层厚度应在50nm以下。通过对2DEG的载流子浓度进行研究,可以掌握2DEG载流子浓度的影响因素,从而通过优化QDFET结构,可提高2DEG的载流子浓度。这对于高灵敏度QDFET的制备具有重要的意义和应用价值。     

Manipulating Single-Photon Transport Properties in an Asymmetrical Waveguide Coupled to a Whispering-Gallery Resonator Containing a Two-Level Atom

A hybrid system containing an asymmetrical waveguide coupled to a whispering-gallery resonator embedded with a two-level atom is designed to investigate single-photon transport properties. The transmission and reflection amplitudes are obtained via the discrete coordinates approach. Numerical simula, tion demonstrates that a tri- frequency photon attenuator is realized by controlling the couplings between the asymmetrical waveguide and the whispering-gallery resonator. The phase shift, group delay and dissipation effects of the transmitted single-photon are also discussed.     

Carrier Envelope Phase Effect of a Long Duration Pulse in the Low Frequency Region

Using the characteristic of small energy difference between two high Rydberg states, we theoretically investigate the carrier envelope phase （CEP） effect in a bound-bound transition of an atom in a low-frequency long laser pulse with tens of optical cycles. Particularly, we first prepare a Rydberg state of a hydrogen-like atom by a laser field with the resonant frequency between this state and the ground state. Then by using a low-frequency long laser pulse interacting with this Rydberg atom, we calculate the population of another Rydberg state nearby this Rydberg state at the end of the laser pulse and find that the population changes dramatically with the CEP of the low-frequency pulse. This CEP effect is attributed to the interference between the positive-frequency and negative-frequency components in one-photon transition. These results may provide a method to measure the CEP value of a long laser pulse with low frequency.     

微腔增强发射的半导体量子点单光子源

单光子源是实现量子密匙分配、线性光学量子计算的基本单元。作者回顾了单光子源在量子信息科学发展中的作用,讨论了光子的统计特性,分析了具有类似原子二能级结构的半导体量子点作为单光子发射源的特点,介绍了微腔与二能级系统的耦合以及微腔量子电动力学基本原理。在弱耦合区,Purcell效应导致微腔中量子点激子复合寿命降低,因此可用微腔来改善量子点单光子发射效率。文章总结了近年来在半导体微腔增强量子点单光子发射领域的进展,探讨了分布式布拉格反射微腔、柱状微腔和光子晶体微腔等结构对改善半导体量子点单光子发射和收集效率、光子极化以及光子全同性等方面的作用,并对未来半导体量子点单光子源的发展进行了展望。     

D-A型二噻吩并磷杂茂衍生物分子的双光子吸收性质

在密度泛函理论理论水平上,采用响应理论方法计算了一系列2,6-donor-acceptor二噻吩并磷杂茂衍生物分子的单、双光子吸收性质.理论计算结果表明该系列分子都具有较大的双光子吸收截面,并且分子中心的磷原子无论被氧化还是金属配合,其双光子吸收截面几乎保持不变.此外,还考虑了溶剂效应对分子光学性质的影响,研究表明分子能级发生了溶剂化蓝移,并且分子的单光子和双光子吸收性质随着溶剂极性表现出非单调变化.     

InGaAs单光子探测器传感检测与淬灭方式

针对InGaAs单光子雪崩光电二极管(SPAD)的光电感应特性,研究了基于门控主动式淬灭的SPAD动态偏置控制和电路实现的策略.采用门控主动淬灭控制可降低淬灭时间,有效抑制暗计数和后脉冲效应.接口感应检测电路采用标准互补金属氧化物半导体(CMOS)工艺进行制造,而SPAD则采用非标准CMOS工艺.利用铟柱互连混合封装工艺实现SPAD与感应接口电路的协同工作.在低温-30?C的条件下,实现了SPAD光触发雪崩电流信号的提取和快速淬灭.研究了感应电阻和临界检测电压对传感检测电性能的影响,并采用简单电路结构实现状态检测,实测得到的SPAD恢复时间、传输延时分别为575,563 ps,淬灭时间为1.88 ns,满足纳秒级精度传感检测应用的需要.     

超导纳米线单光子探测器动态电感研究

单光子探测是一种量子极限光信号的检测技术,超导纳米线单光子探测器(Superconducting NanowireSingle-Photon Detector,SNSPD)作为一种新型的单光子探测技术,在量子通信等众多领域有着广阔的应用前景。SNSPD的动态电感直接决定了SNSPD的工作速度。文中对SNSPD动态电感的特性和测试方法做了详细的研究,成功实现了低温下SNSPD动态电感的测试,并对结果进行了分析处理和研究。利用BCS理论对动态电感随温度、偏置电流变化的特性进行分析计算,并与实际测量结果对比讨论,为未来如何降低SNSPD动态电感、提高其性能的研究工作提供了参考依据。     

用单光子实现两单分子间通讯

据美国物理学家组织网报道,瑞士苏黎世联邦理工学院和德国马克斯·普朗克研究所的科学家用单个光子激发单个分子,实现了两个单分子间的信号传送。在实验中,可让单个分子模拟光频,将单光子流传递给相距数米的另一个分子,如同两个站点之间的无线电通讯。这为开展以单光子作为量子信息载体,由单个发射器进行信息处理的进一步研究铺平了道路。     

One- and two-photon absorption-amplification response in a four-level atomic system with vacuum-induced coherence

This paper theoretically studies the effects of the vacuum-induced coherence on one- and two-photon absorption in a four-level atomic medium. It finds that the one- and two-photon absorption and amplification properties are quite sensitive to the vacuum-induced coherence. It is also shown that the one- and two-photon absorption spectra can be dramatically affected by modulating the relative phase of the applied fields. With the proper choice of the relative phase, the amplification without inversion for the probe field can be realized.