Adaptive finite-time prescribed performance control for stochastic nonlinear systems with unknown virtual control coefficients

Nonlinear Dynamics - This paper is devoted to the adaptive finite-time prescribed performance control (FTPPC) for stochastic nonlinear systems with unknown virtual control coefficients (UVCCs),...     

污泥基吸附剂对亚甲基蓝和环丙沙星的吸附性能研究

亚甲基蓝和环丙沙星是水体中2种污染物, 对生态环境有潜在危害. 本文以市政剩余活性污泥为原料, 氯化锌为活化剂热解制备污泥基吸附剂, 研究盐酸酸洗浓度、氯化锌浓度、热解温度、热解时间等对污泥基吸附剂吸附水中亚甲基蓝和环丙沙星性能的影响. 结果表明 (1)污泥基吸附剂对亚甲基蓝的吸附性能随盐酸酸洗浓度的增大而增加, 对环丙沙星的吸附性能则随盐酸酸洗浓度的增大呈先降后增趋势, 两者均在1.500mol·L-1盐酸浓度下取得最优值. (2)污泥基吸附剂对亚甲基蓝和环丙沙星的吸附性能随氯化锌浓度和热解温度的增加呈先升后降趋势, 在氯化锌浓度为4.0mol·L-1、热解温度为500℃时有最优值; 随着热解时间的延长, 污泥基吸附剂对亚甲基蓝和环丙沙星的吸附性能分别在500℃热解70min和80min时有最优值. (3)污泥基吸附剂的最佳制备条件为 氯化锌4.0mol·L-1活化2h、500℃热解70min和80min、1.500mol·L-1盐酸酸洗; 以此制得的污泥基吸附剂对亚甲基蓝和环丙沙星的去除率分别为97.7%和96.4%, 平衡吸附量分别为97.9mg·g-1和3.9mg·g-1, 且污泥基吸附剂对亚甲基蓝和环丙沙星的吸附过程均符合准二级动力学方程.     

Spatial variability and radiation assessment of the radionuclides in soils and sediments around a uranium tailings reservoir,south of China

Journal of Radioanalytical and Nuclear Chemistry - The concentrations of 238U, 226Ra, 232Th and 40K and gross α, β were measured in soils and sediments around a uranium tailings reservoir...     

Effects of hydroxyethyl methyl cellulose ether on the hydration and compressive strength of calcium aluminate cement

Journal of Thermal Analysis and Calorimetry - Aluminate containing phases such as tricalcium aluminate (C3A) and dodecacalcium heptaaluminate (C12A7) play a key role in the reaction between...     

Time-dependent Ginzburg–Landau equations for multi-gap superconductors

We numerically solve the time-dependent Ginzburg–Landau equations for two-gap superconductors using the finite-element technique. The real-time simulation shows that at low magnetic field, the vortices in small-size samples tend to form clusters or other disorder structures. When the sample size is large, stripes appear in the pattern. These results are in good agreement with the previous experimental observations of the intriguing anomalous vortex pattern, providing a reliable theoretical basis for the future applications of multi-gap superconductors.     

Multicaloric and coupled-caloric effects

The multicaloric effect refers to the thermal response of a solid material driven by simultaneous or sequential application of more than one type of external field.For practical applications,the multicaloric effect is a potentially interesting strategy to improve the efficiency of refrigeration devices.Here,the state of the art in multi-field driven multicaloric effect is reviewed.The phenomenology and fundamental thermodynamics of the multicaloric effect are well established.A number of theoretical and experimental research approaches are covered.At present,the theoretical understanding of the multicaloric effect is thorough.However,due to the limitation of the current experimental technology,the experimental approach is still in progress.All these researches indicated that the thermal response and effective reversibility of multiferroic materials can be improved through multicaloric cycles to overcome the inherent limitations of the physical mechanisms behind single-field-induced caloric effects.Finally,the viewpoint of further developments is presented.     

Investigation of β-Ga_2O_3 films and β-Ga_2O_3/GaN heterostructures grown by metal organic chemical vapor deposition

In this work,(-201) β-Ga_2O_3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD). It is revealed that the β-Ga_2O_3 film grown on GaN possesses superior crystal quality, material homogeneity and surface morphology than the results of common heteroepitaxial β-Ga_2O_3 film based on sapphire substrate. Further, the relevance between the crystal quality of epitaxial β-Ga_2O_3 film and the β-Ga_2O_3/GaN interface behavior is investigated. Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequent β-Ga_2O_3 film. Moreover, the energy band structure of β-Ga_2O_3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained. The results in this work not only convincingly demonstrate the advantages of β-Ga_2O_3 films grown on GaN substrate, but also show the great application potential of MOCVD β-Ga_2O_3/GaN heterostructures in microelectronic applications.