An integrable Hamiltonian hierarchy and associated integrable couplings system

This paper establishes a new isospectral problem. By making use of the Tu scheme, a new integrable system is obtained. It gives integrable couplings of the system obtained. Finally, the Hamiltonian form of a binary symmetric constrained flow of the system obtained is presented.     

Terahertz plasmon and surface-plasmon modes in cylindrical metallic nanowires

We present a theoretical study on collective excitation modes associated with plasmon and surface-plasmon oscilla- tions in cylindrical metallic nanowires. Based on a two-subband model, the dynamical dielectric function matrix is derived under the random-phase approximation. An optic-like branch and an acoustic-like branch, which are free of Landau damp- ing, are observed for both plasmon and surface-plasmon modes. Interestingly, for surface-plasmon modes, we find that two branches of the dispersion relation curves converge at a wavevector qz = qrnax beyond which no surface-plasmon mode exists. Moreover, we examine the dependence of these excitation modes on sample parameters such as the radius of the nanowires. It is found that in metallic nanowires realized by state-of-the-art nanotechnology the intra- and inter-subband plasmon and surface-plasmon frequencies are in the terahertz bandwidth. The frequency of the optic-like modes decreases with increasing radius of the nanowires, whereas that of the acoustic-like modes is not sensitive to the variation of the radius. This study is pertinent to the application of metallic nanowires as frequency-tunable terahertz plasmonic devices.     

Optical performance simulation and optimization for CMOS image sensor pixels

Finite-difference time-domain (FDTD) method is used to perform three dimension simulations for the optical performance of 1.75 μm pitch pixels of CMOS image sensor. A three dimension pixel model for CMOS image sensor pixels is set up. Micro-lens optimization, dielectric stack height reduction can decrease the optical power loss. A SiN layer with proper thickness can reduce the reflection at the Si–SiO₂ interface. A high refractive index lightpipe is proposed to confine the light within the pixel. The simulation results show that the optical efficiency of the optimized 1.75 μm pixel compare to that before optimized is promoted by more than 10% and the cross-talk is reduced by 50%.     

Commissioning of electron cooling in CSRe

The 400 MeV/u 12C6+ion beam was successfully cooled by the intensive electron beam near 1 A in CSRe.The momentum cooling time was estimated near 15 s.The cooling force was measured in the cases of different electron beam profiles,and the different angles between the ion beam and electron beam.The lifetime of the ion beam in CSRe was over 80 h.The dispersion in the cooling section was confirmed as positive close to zero.The beam sizes before cooling and after cooling were measured by the moving screen.The beam diameter after cooling was about 1 mm.The bunch length was measured with the help of the signals from the beam position monitor.The diffusion was studied in the absence of the electron beam.     

A New Integrable Couplings of Classical-Boussinesq Hierarchy with Self-Consistent Sources

A kind of integrable couplings of soliton equations hierarchy with self-consistent sources associated with sl（4） is presented by Yu. Based on this method, we construct a new integrable couplings of the classical-Boussinesq hierarchy with self-consistent sources by using of loop algebra sl（4）. In this paper, we also point out that there exist some errors in Yu＇s paper and have corrected these errors and set up new formula. The method can be generalized other soliton hierarchy with self-consistent sources.     

A pilot experiment for mass measurement at CSRe

A pilot experiment of mass measurement was performed at CSRe with the method of isochronous mass spectrometry. The secondary fragments produced via RIBLL2 with the primary beam of 400 MeV/u 36Ar delivered by CSRm were injected into CSRe. The revolution periods of the stored ions, which depend on the mass-to-charge ratios of the stored ions, were measured with a time-of-flight detector system. The results show that the mass resolution around 8×10-6 for Δm/m is achieved.     

Commissioning of electron cooling in CSRm

A new generation electron cooler has started operation in the heavy ion synchrotron CSRm which is used to increase the intensity of heavy ions. Transverse cooling of the ion beam after horizontal multi-turn injection allows beam accumulation at the injection energy. After optimization of the accumulation process an intensity increase in a synchrotron pulse by more than one order of magnitude has been achieved. In given accumulation time interval of 10 seconds, 108 particles have been accumulated and accelerated to the final energy. The momentum spread after accumulation and acceleration in the 10-4 range has been demonstrated in six species of ion beams. Primary measurements of accumulation process varying with electron energy, electron beam current, electron beam profile, expansion factor and injection interval have been performed. The lifetimes of ion beams in the presence of electron beams were roughly measured with the help of DCCT signal.     

HIRFL-CSR commissioning in 2006 and 2007

HIRFL-CSR, a new heavy ion cooler-storage-ring system at IMP, had been in commissioning since the beginning of 2006. In the two years of 2006 and 2007 the CSR commissioning was finished, including the stripping injection (STI), electron-cooling with hollow electron beam, C-beam stacking with the combination of STI and e-cooling, the wide energy-range synchrotron ramping from 7 MeV/u to 1000 MeV/u by changing the RF harmonic-number at mid-energy, the multiple multi-turn injection (MMI), the beam accumulation with MMI and e-cooling for heavy-ion beams of Ar, Kr and Xe, the fast extraction from CSRm and single-turn injection to CSRe, beam stacking in CSRe and the RIBs mass-spectrometer test with the isochronous mode in CSRe by using the time-of-flight method.     

Phase Transition in CCI4 under Pressure： a Raman Spectroscopic Study

High-pressure Raman studies at room temperature are performed on CC14 up to 13 GPa. The Raman bands of the internal modes （v2, v4 and vl） show entirely positive pressure dependence. The slopes dω/dP of the internal modes exhibit two sudden changes at O. 73 GPa and 7.13 GPa, respectively. A new lower frequency mode （225 em-1） appears at 3.03 GPa, and the splitting of v2, v3 and v4 occurs at about 7.13 GPa. Moreover, Raman spectra of Fermi resonance show that the relative position of the v1 ＋ v4 combination and the v3 fundamental firstly interchanges corresponding to that at ambient pressure, then the v1 ＋ v4 combination disappears in the gradual process of compression. It is indicated that the pressure-induced phase transition from CC14 Ⅱ to CC14 Ⅲ occurs at 0.73 GPa, and CC14 Ⅲ undergoes a transition to CC14 IV below 3.03 GPa. Further CC14 Ⅳ transforms in a new high-pressure phase at about 7.13 GPa, and the symmetry of the new high-pressure phase is lower than that of CC14 Ⅳ. All the transitions are reversible during decompression.     

Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE

Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.