Lamb wave detection of limpet mines on ship hulls

This paper describes the use of ultrasonic guided waves for identifying the mass loading due to underwater limpet mines on ship hulls. The Dynamic Wavelet Fingerprint Technique (DFWT) is used to render the guided wave mode information in two-dimensional binary images because the waveform features of interest are too subtle to identify in time domain. The use of wavelets allows both time and scale features from the original signals to be retained, and image processing can be used to automatically extract features that correspond to the arrival times of the guided wave modes. For further understanding of how the guided wave modes propagate through the real structures, a parallel processing, 3D elastic wave simulation is developed using the finite integration technique (EFIT). This full field, technique models situations that are too complex for analytical solutions, such as built up 3D structures. The simulations have produced informative visualizations of the guided wave modes in the structures as well as mimicking directly the output from sensors placed in the simulation space for direct comparison to experiments. Results from both drydock and in-water experiments with dummy mines are also shown.     

Nanointegration of ZnO with Si and SiC

The study is dedicated to some aspects of the controlled heteroepitaxial growth of nanoscaled ZnO structures and an investigation of their general and dimension mediated properties. ZnO nanostructures were synthesized by optimized MOCVD process via two growth approaches: (i) catalyst free self-organized growth of ZnO on Si substrates and (ii) ZnO heteroepitaxy on p-type hexagonal 4H-SiC substrates. The SiC substrate was prepared by sublimation epitaxy and served as a template for the ZnO epitaxial growth. The epitaxial growth of n-ZnO on p-SiC resulted in a regular matrix of well-faceted hexagonally shaped ZnO single crystals. The achievement of ZnO integration with Si encompasses controlled growth of vertically oriented nanosized ZnO pillars. The grown structures were characterized by transmission electron microscopy and microphotoluminescence. Low concentration of native defects due to a stoichiometry balance, advanced optical emission, (excitonic type near-band-edge emission and negligible defect related luminescence) and continuous interfaces (epitaxial relationship ZnO_[0 0 0 1]/SiC_[0 0 0 1]) are evidenced. The ZnO nanopillars were further probed as field emitters: the grown structures exhibits advanced field emission properties, which are explained in term of dimensionality and spatial uniformity of the nanopillars. The present results contribute to understanding and resolving growth and device related issues of ZnO as a functional nanostructured material.     

Au-assisted electroless etching of silicon in aqueous HF/H2O2 solution

The Au-assisted electroless etching of p-type silicon substrate in HF/H₂O₂ solution at 50 °C was investigated. The dependence of the crystallographic orientation, the concentration of etching solution and the silicon resistivity on morphology of etched layer was studied. The layers formed on silicon were investigated by scanning electron microscopy (SEM). It was demonstrated that although the deposited Au on silicon is a continuous film, it can produce a layer of silicon nanowires or macropores depending on the used solution concentration.     

Energy transfer in Er:Eu:Yb co-doped tellurite glasses: Yb as enhancer and quencher

Energy transfer has been studied from Er³⁺ to Eu³⁺ ions on excitation with NIR photons (796 and 980 nm) with and without Yb³⁺ ions. It is found that in one case the presence of Yb³⁺ enhances the fluorescence yield (980 nm excitation) whereas in the other case it quenches (796 nm excitation). Energy transfer from Er³⁺ ion's levels ⁴S_3/2 and ²H_11/2 is verified by decay curve analysis in both the cases. The nature of interaction between the donor (Er) and the acceptor (Eu) ions is found to be dipole-dipole. The energy transfer parameters viz. transfer probability, critical distance etc. have been calculated.     

Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au‐assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation‐free III–V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 °C to 340 °C for InAs NWs on Si(111), 330 °C to 360 °C for InP NWs on Si(111), 370 °C to 420 °C for InAs NWs on GaAs(111)B and 380 °C to 540 °C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings and are discussed within the frame of a theoretical model. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Enhancement of electron field emission by carbon coating on vertically aligned Si nanowires

Electron field emission properties of vertically aligned Si nanowires, synthesized by chemically etching p-type Si wafers with different etching times were investigated in detail. Fabrication of Si nanowires was confirmed by field emission scanning electron microscopic investigation. It was observed that a thin layer of amorphous carbon coating over the grown Si nanowires enhanced the field emission properties significantly.     

Laser action in a cw diode-pumped Nd:Ca3Sc2Ge3O12 crystal

CW diode-pumped laser operation of Nd³⁺ in Ca₃Sc₂Ge₃O₁₂ (CaSGG) single garnet crystal has been demonstrated for the first time. We measured an 18% slope efficiency and 2.7-nm tunability with two different laser cavities. A spectroscopic characterization of our sample has also been performed including the absorption cross section in the 800-nm region and the emission cross section and radiative lifetime of the upper laser level. Received: 7 December 1999 / Revised version: 6 February 2000 / Published online: 27 April 2000     

Characterization of optical waveguide in Nd: LuVO4 crystals by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd:LuVO₄ crystals by triple-energy O³⁺-ion implantation at energies of 2.4, 3.0, and 3.6 MeV and doses of 1.4, 1.4, and 3.1×10¹⁴ ions/cm², respectively. The prism-coupling method is used to investigate the dark-mode property at a wavelength of 633 nm. The refractive index profiles of the waveguide are reconstructed by the reflectivity calculation method (RCM). The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which indicates the formation of non-leaky waveguide in the crystal.     

Temperature-dependent fluorescence characteristics of an ytterbium-sensitized erbium-doped tellurite glass

In this article, the 1.5 μm emission spectra corresponding to the ⁴I_13/2→⁴I_15/2 transition of Er³⁺ in tellurite glass are studied within the temperature from 8 to 300 K. The emission spectra of Er³⁺: ⁴I_13/2→⁴I_15/2 transition are also analyzed using a peak-fit routine, and an equivalent four-level system is proposed to estimate the stark splitting for the ⁴I_15/2 and ⁴I_13/2 levels of Er³⁺ in the tellurite glass. The results indicate that the ⁴I_13/2→⁴I_15/2 emission of Er³⁺ can exhibit a considerable broadening due to a significant enhance the peak a′, and b′ change, respectively, and the peaks of which are located at about 1507 and 1556 nm. A detailed study of temperature-dependent 1.5 μm emission spectra involving the change of the corresponding sub-bands shows that as the temperature decreases from 300 to 8 K, its line-shape becomes sharper and more intense (the full-width at half-maximum decreases from 59 to 38 nm). Temperature-dependent fluorescence intensities and the experimentally determined lifetimes are investigated; the results show that a decrease behavior of fluorescence intensities and lifetimes are observed for temperature from 8 to 300 K.     

A Diode-Stack End-Pumped Electro-Optically Q-Switched Nd:YAG Slab Oscillator--Amplifier System

A laser diode-stack end-pumped electro-optically Q-switched Nd：YAG slab oscillator-amplifier system with neardiffraction-limited output is demonstrated by a stable-unstable hybrid resonator. The average power of 100 W at a repetition rate of lOkHz with a pulse width 14.7ns and average power of 76.3 W at a repetition rate of 5kHz with a pulse width of 10.2ns are measured. At the repetition rate of 10 kHz and at an output power of 89 W, the beam quality factors M^2 in the unstable and stable directions are 1.3 and 1.5, respectively.