Broadband and High Efficient 1530 nm Emission from Oxyfluoride Glass Ceramics Codoped with Er3＋ and Yb3＋ Ions

The emission at 1530nm and its applications in optical communications are discussed. The efficient width of the emission band △eff, which is up to 91 nm, is larger as compared with silica-based glass, bismuth glass and ZrF4-BaF2-LaFa-AIF3-NaF （ZBLAN） glass doped by Er^3＋ ions. Under the excitation of 785 nm laser, the emission integral intensity of 153Onto increases about five times in the glass ceramics higher than that in the glass. This is explained by the quantum cutting process by two-photon emission with phonon assistance. The results indicate that the glass ceramics are a promising candidate for developing broadband optical amplifiers in wavelength-division multiplexed systems.     

Synthesis,Structure and Characterization of a New Silicophosphate,K_2SiP_4O_(13), with a Six-fold Coordinated Si

A potassium silicophosphate,K2SiP4O13,has been synthesized in molten polyphosphoric acid.It crystalizes in the triclinic space group P1^-(No.2)with a=4.8327(10),b=7.7403(15),c=14.485(3)?,a=82.29(3)°,β=83.31(3)°,γ=81.95°,V=529.02(19)?³,Z=2.The crystallographic structure features 2D layers of[SiP₄O₁₃]_∞in the ab plane with counter cations K⁺residing among the layers,and the anionic framework of[SiP₄O₁₃]_∞is composed of six-fold coordinated Si atoms and tetraphosphate anions by sharing vertex O atoms.The title compound was characterized by powder X-ray diffraction,IR and Raman spectroscopies,UV-vis diffuse reflectance spectroscopy,thermogravimetry and differential scanning calorimetry.     

固态源分子束外延法生长InGaP/GaAs异质结构的热力学分析

本文建立了采用分子束外延法制备InGaP/GaAs异质结构的热力学模型,其中考虑了两个重要的因素,由晶格失配引起的内在应力和InP的脱附.所得到的模型与现有实验结果匹配较好.该模型的实验结果表明在InGaP的生长过程中,生长温度,In/Ga束流比及合金组分之间的相互关系,同时也与实验数据相吻合.该模型对于其他气相沉积生长方式也具有一定的适用性.     

大直径铌酸锂晶片的化学机械抛光研究

本文采用化学机械抛光方法,以SiO2作为抛光液的研磨介质,对76mm Z切向的铌酸锂晶片的抛光进行了深入的研究.分析了影响铌酸锂晶片抛光效果的因素,通过优化工艺参数,使铌酸锂的表面粗糙度Ra达到0.387nm,平面面形误差小于4μm.     

等径控制系统的改进及在光学级铌酸锂生长中的应用

分析了提拉法晶体生长过程中影响滞后变化的因素,采用传统PID调节器和计算机辅助控制相结合的办法,解决了铌酸锂晶体生长过程中的精确等径控制问题,并在大直径铌酸锂晶体生长应用中取得了满意的效果.生长的76mm直径的铌酸锂晶体,生长条纹问题得到很大改善,光学均匀性提高了一个量级以上.     

铌酸锂晶体中的分形几何观察

研究了铌酸锂晶体沿c轴的真实生长界面及腐蚀坑模式,在两种情况中均观察到了明显的塞尔宾斯基(Sierpinski)三角垫分形几何特征,两种情况的分形维度通过计算得出均为ln3/ln2≈1.58.     

对同成分LiNbO3:Fe非挥发全息存储的研究

我们以双中心模型为基础,理论研究了同成份掺铁铌酸锂晶体在稳态情况下的非挥发双色二步全息存储性能.我们考虑了在深(Fe2+/Fe3+)、浅(NbLi4+/NbLi5+)能级之间所有可能的电子交换过程,通过比较深浅能级上的空间电荷场及总的空间电荷场的强度可以发现,深能级上的空间电荷场对总的空间电荷场的大小起到了非常重要的作用.此外,我们还研究了不同实验条件对LiNbO3:Fe非挥发全息存储的影响.     

A STUDY ON REAL-TIME LOW-FREQUENCY SPATIAL FILTERING PROCESS OF AN OPTICAL IMAGE USING LiNbO3:Fe CRYSTAL

The optimum image processing result of low-frequency filtering was obtained when LiNbO₃:Fe crystal as a spatial filter was placed at a certain position behind the spatial-frequency spectral plane of an optical Fourier transform system, which corresponds to the minimum transmittance ratio in Z-scan curve. The experimental results show that self-defocusing due to photorefractive negative-lens effect is the main factor responsible for the low- frequency filtering.     

三元同成分掺镁铌酸锂晶体的生长与抗光损伤性能研究

以三元同成分为基础配料,生长了掺杂浓度为6.5 mol;、7.5 mol;的掺镁铌酸锂晶体,并与传统的掺镁5.0mol;(Li/Nb=48.38/51.62)铌酸锂晶体作对比.光斑畸变法实验表明所生长的掺镁晶体的抗光损伤能力均达到5×105 W/cm2,与掺镁5.0mol;同成分铌酸锂晶体相近.全息法测得晶体最大折射率变化分别为4.39×10-6、4.61×10-6,而掺镁5.0mol;晶体为5.62×10-6.晶体的红外光谱和紫外-可见吸收谱显示,所生长的掺镁6.5mol;、7.5mol;晶体均已超过掺杂阈值.综上可知,采用三元同成分配比是获得高质量晶体的有效途径.     

铌酸锂晶体的光折变效应

铌酸锂(LiNbO₃, LN)是一种多功能多用途的人工晶体,被称为“光学硅”。近期以铌酸锂薄膜(LNOI)为平台的集成光子学发展迅速,有将“光学硅”变为现实的趋势。高集成意味着高局域高光强密度,使铌酸锂晶体的光折变效应变得不容忽视。光折变效应是光致折射率变化的简称,是非线性光学的重要组成部分。本文回顾了铌酸锂晶体光折变效应的发现和机理、不同掺杂及掺杂组合对光折变效应的调控,重点介绍了铋镁双掺铌酸锂晶体的光折变性能及相关理论和实验结果,概述了铌酸锂光折变波导和孤子,及基于LNOI的集成光子学器件中的光折变效应,并对未来的研究趋势进行了展望。期待我国发挥铌酸锂光折变研究及LNOI产业化的优势,在光子学芯片的竞争中占据主导地位。