Guiding mode in elliptical core microstructured polymer optical fiber

A kind of microstructured polymer optical fiber with elliptical core has been fabricated by adopting in- situ chemical polymerization technology and the secondary sleeving draw-stretching technique.Microscope photography demonstrates the clear hole-structure retained in the fiber.Though the holes distortion is visible,initial laser experiment indicates that light can be strongly confined in the elliptical core region, and the mode field is split obviously and presents the multi-mode characteristic.Numerical modeling is carried out for the real fiber with the measured parameters,including the external diameter of 150μm,the average holes diameter of 3.3μm,and the average hole spacing of 6.3μm by using full-vector plane wave method.The guided mode fields of the numerical simulation are consistent with the experiment result. This fiber shows the strong multi-mode and weak birefringence in the visible and near-infrared band,and has possibility for achieving the fiber mode convertors,mode selective couplers and so on.     

温敏性荧光纳米材料的合成

合成了以荧光材料罗丹明B/SiO2为核,交联聚N-异丙基丙烯酰胺(PNIPAM)为壳的具有核/壳结构的纳米颗粒。用氢氟酸除去二氧化硅模板核后,形成了核壳结构的温敏荧光微球。28～36℃范围内的温敏性实验表明,该粒子的低临界溶解温度(LCST)为33℃,具有温敏性,用SEM、TEM、XRD、FT-IR等手段对温敏荧光微球的组成和结构进行了表征和分析,探讨了磁性温敏纳米颗粒的制备机理。     

纳米半球微镜阵列结构对GaN基LED光提取效率的影响

为了分析表面纳米半球微镜结构对GaN基发光二极管（LED)光提取效率的影响,利用时域有限差分法(FDTD)分别对GaN、ZnO、SiO2、聚苯乙烯组成的半球微镜结构进行了分析和比较,同时用模式分析方法从理论上对FDTD计算结果进行了进一步验证。研究发现,在亚波长范围,折射率较小的材料不利于导模与表面结构层的耦合,不会对光提取效率的提高产生明显影响。相比之下,折射率较大的材料会使更多的模式耦合到半球微镜阵列层,更有利于光提取效率的提高;当材料选定,纳米半球半径增加时,光提取效率也逐渐增加,优化后半径为600 nm的半球微镜阵列结构GaN基LED,其光提取效率比没有结构的普通平板LED增强5.66倍,在以上波导材料结构中最为优化。在此基础上,通过等效折射率的计算得到半球微镜结构的等效折射率模型,并利用非对称平板模式分析的办法对以上得到的结论进行了分析和验证。这些结果对实际的高性能GaN基LED的设计与优化具有重要意义。     

弦振动形成驻波的规律和数据的MATLAB处理

本文通过对大量实验数据进行分析,同时采用MATLAB软件对数据进行系统处理,作出了数据间的关系图。借助软件使物理分析简单化,形象化,进而使实验者有更多的精力关注其内在的物理思想。并在此基础上,分析总结出弦振动形成驻波时波长与张力以及波长与振动频率的规律,提出检验判断实验数据的方法,可以使实验者在做实验的过程中随时判断数据的正确与否。     

弹性体摩擦的黏滞疲劳理论及实验研究

为了更好地解决弹性体摩擦学方面的问题,建立了弹性体摩擦的黏滞疲劳理论,阐明了弹性体摩擦是粘附的表面拉伸效应和迟滞的体积变形效应的综合作用,揭示了弹性体磨损的本质机理是周期性疲劳破坏,解释了弹性体在摩擦过程中的各种特征现象.实验论证了黏滞疲劳理论在摩擦和磨损方面的可行性和精确性.通过建立的公式计算了弹性体的摩擦系数和摩擦力,并控制误差在6%的范围内;计算了弹性体的表观单位磨损率,并控制误差在7%的范围内.     

Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

The hot-carrier degradation for 90~nm gate length lightly-doped drain (LDD) NMOSFET with ultra-thin (1.4~nm) gate oxide under the low gate voltage (LGV) (at V_g=V_th, where V_th is the threshold voltage) stress has been investigated. It is found that the drain current decreases and the threshold voltage increases after the LGV (V_g=V_th stress. The results are opposite to the degradation phenomena of conventional NMOSFET for the case of this stress. By analysing the gate-induced drain leakage (GIDL) current before and after stresses, it is confirmed that under the LGV stress in ultra-short gate LDD-NMOSFET with ultra-thin gate oxide, the hot holes are trapped at interface in the LDD region and cannot shorten the channel to mask the influence of interface states as those in conventional NMOSFET do, which leads to the different degradation phenomena from those of the conventional NMOS devices. This paper also discusses the degradation in the 90~nm gate length LDD-NMOSFET with 1.4~nm gate oxide under the LGV stress at V_g=V_th with various drain biases. Experimental results show that the degradation slopes (n) range from 0.21 to 0.41. The value of n is less than that of conventional MOSFET (0.5-0.6) and also that of the long gate length LDD MOSFET (\sim0.8).     

Maxwell理论的电磁对偶性

本文主要回顾了电磁场的对偶性和电荷量子化解释,并把电磁场的对偶性推广到了一般线性介质状况,讨论了磁单极及其整体规范变换,并给出了Dirac磁单极产生的磁矢势的普遍表达式;最后给出了Maxwell方程的U（1）对称性及其对偶性的费米子描述方法。     

三维非对易空间谐振子体系的探讨

简要介绍了非对易三维空间的性质,并在非对易三维空间中讨论谐振子体系.得出谐振子体系中空间和动量算符的特有形式,以及给出三维非对易谐振子体系的哈密顿量的明显表达式.     

Investigation of the characteristics of GIDL current in 90nm CMOS technology

A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD) NMOSFET. This paper shows that the drain bias $V_{\rm D}$ has a strong effect on GIDL current as compared with the gate bias $V_{\rm G}$ at the same drain--gate voltage $V_{\rm DG}$. It is found that the difference between $I_{\rm D}$ in the off-state $I_{\rm D}-V_{\rm G}$ characteristics and the corresponding one in the off-state $I_{\rm D}-V_{\rm D}$ characteristics, which is defined as $I_{\rm DIFF}$, versus $V_{\rm DG}$ shows a peak. The difference between the influences of $V_{\rm D}$ and $V_{\rm G}$ on GIDL current is shown quantitatively by $I_{\rm DIFF}$, especially in 90nm scale. The difference is due to different hole tunnellings. Furthermore, the maximum $I_{\rm DIFF }$($I_{\rm DIFF,MAX})$ varies linearly with $V_{\rm DG}$ in logarithmic coordinates and also $V_{\rm DG}$ at $I_{\rm DIFF,MAX}$ with $V_{\rm F}$ which is the characteristic voltage of $I_{\rm DIFF}$. The relations are studied and some related expressions are given.