Y-Ba-Cu-Sn-O体系的结构和性能

通过YBa₂Cu_³x)Sn_xO_7+y体系样品的结构参数、XPS和Mssbauer谱、电阻-温度关系、氧含量以及热分解温度的综合测量,发现:Sn在该体系中替代了Cu的位置并保持4价状态;在x<0.4范围内Sn替代Cu对晶体结构没有影响,引起T_c的变化也极小;Sn替代Cu使体系的氧含量增加,并明显地影响了Cu的价态,使Cu呈现+3价,实验在结构、氧缺位及电子态方面为认识超导电性的起源提供了一些重要信息,在综合分析实验结果的基础上,本文提出:金属原子与氧原子间的耦合程度决定了体系的超导电性。     

超导金属玻璃Zr_(78)CO_(22)在横向磁场中超导-正常转变的阶梯结构

在横向磁场中,测量了超导金属玻璃 Zr_(78)Co_(22)的 V-H 转变曲线.观察到除存在磁通流动外,还存在着两种类型的阶梯式有阻态.一类是由序参量的热力学涨落产生的相位滑移中心所致,另一类则相应于热斑的存在.同时还观察到相位滑移中心与热斑共存的现象。对磁通蠕动.磁通流动和磁通跳跃对阶梯结构的影响作了讨论.     

超导金属玻璃Zr_(78)Co_(22)中局域的有阻态

本文系统地研究了在无外磁场时,超导金属玻璃Zr_(78)Co_(22)的I-V特性。观察到电流引起的由超导态向正常态的转变是以阶梯跃变的方式完成的。阶梯的出现是局域的,且与电流扫描速率有关。分析表明,有阻态阶梯的出现,是由于材料本身的不均匀性而导致热斑出现的结果。一维热流方程可以用来描述金属玻璃Zr_(78)Co_(22)局域的有阻态,但必须计及各热斑间的相互作用和样品本身的自吸热等效应。     

POSITRON LIFETIME STUDIES OF Y1-xCaxBa2Cu3O7-δ AND Y1-xCaxBa2Cu3-xFexO7-δ

In this paper it is reported that the measurement of the bulk positron lifetime as a function of substitution content x in the temperature range from 70 to 220K was performed in two high-T_c superconducting systems, Y_1-xCa_xBa₂Cu_3-xFe_xO_7-δ and Y_1-xCa_xBa₂Cu₃O_7-δ. It was found that τ_B of both systems decreases significantly with x and the temperature dependence of τ_B is very weak in normal state. In lower temperature region (Tc), a dramatic x-dependent temperature variation of τ_B was observed in the Ca-substituted system: from a decrease of τ_B with decreasing T to an increase of τ_B. With increasing x, the temperature dependence of τ_B remains weak in the Ca- and Fe- substituted systems. Compared with the experimental data of positron lifetime in other substituted systems and the calculation of the positron density distribution, the authors suggest that positron bulk lifetime spectra behaviour can be interpreted by the physical model based on the transfer of electron density between the CuO₂ planes and Cu-O chains. Therefore, the study of positron lifetime spectra provides a useful means to detect the local charge density and to study the correlation between the electronic structure and the high-T_c superconductivity.     

金属元素的正电子鉴别技术

Twenty pure elemental metal samples have been studied with a coincidence Doppler broadening system (CDB). The results show the relationship between the CDB spectra and the electronic structure of these samples. The experimental results are compared to simple theoretical predictions, which show that the high-momentum part of the Doppler-broadening spectra can be used to distinguish different elements.     

La_2NiO_(4 δ)的非化学计量与氧渗透性能

采用质量损失法、碘量滴定法和正电子湮没寿命谱研究了 La_2NiO_(4＋δ)透氧膜的非化学计量,并表征了该材料的氧渗透性能,探讨了 La_2NiO_(4＋δ)的非化学计量缺陷与氧渗透性能之间的关系。研究结果表明, La_2NiO_(4＋δ)的氧渗透通量随δ的增大而增大。     

(La1-xYx)2/3Ca1/3MnO3体系的正电子湮没研究

为研究超大磁阻材料的掺杂效应,我们测量了(La1-xYx)2/3Ca1/3MnO3系列样品的正电子寿命谱,并结合X射线衍射和电阻温度关系的测量结果,系统地研究了Y掺杂引起的样品局域电子结构和空位型缺陷的变化,并提出了局域电荷转移的观点,解释正电子体寿命的变化.     

第2系列ZrO2(Y2O3)薄膜的慢正电子研究

用慢正电子技术研究了在溅射时不加偏压,衬底加热300℃,纯Ar气氛下制备的用Y_{2O3稳定的ZrO2薄膜材料(简称YSZ薄膜),发现了YSZ薄膜在不同 深度处的缺陷分布情况,退火温度对YSZ薄膜缺陷有影响.简要讨论了致密、优质YSZ薄膜的 制备方法.}     

慢正电子束研究薄膜、界面和近表面微观结构

慢正电子束技术十几年来发展起来的探测材料近表面微结构的新手段,文章介绍了其在薄膜、界面和近表面测量的基本方法和部分应用结果。     

Vacancy in 6H—Silicon Carbide Studied by Slow Positron Beam

The defect changes in 6H-SiC after annealing and 10MeV electron irradiation have been studied by using a variable-energy positron beam.It was found that after annealing,the defect concentration in n-type 6H-SiC decreased due to recombination with interstitials.When the sample was annealed at 1400℃ for 30 min in vacuum,a 20-nm thickness Si layer was found on the top of the SiC substrate,this is a direct proof of the Si atoms diffusing to surface when annealed at high temperature stages.After 10MeV electron irradiation,for n-type 6H-SiC,the S parameter increased from 0.4739 to 0.4822,and the relative positron-trapping rate was about 27.878 times of the origin sample,this shows that there are some defects created in n-type 6H-SiC.For p-type 6H-SiC,it is very unclear,this may be because of the opposite charge of vacancy defects.