SiC/环氧树脂复合材料冲蚀磨损性能的研究

采用环氧树脂为粘接剂制备了SiC/环氧树脂复合材料,在自制的射流式冲蚀磨损试验机上研究了SiC/环氧树脂的冲蚀磨损性能.结果表明:大尺寸SiC颗粒制备的复合材料较小尺寸SiC颗粒制备的复合材料具有更好的冲蚀磨损性能,且大尺寸SiC颗粒复合材料的冲蚀磨损性能优于Q235钢,而小尺寸SiC颗粒复合材料则低于Q235钢.随着冲蚀角度的变化,其平行材料表面的切削分量和垂直材料表面的冲击分量将会发生变化,低角度冲蚀磨损机理以显微切削和碾压造成环氧树脂及SiC颗粒的层片状脱落为主转变为高角度冲蚀磨损以SiC颗粒碎裂造成环氧树脂疲劳脱落为主.     

The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide

This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi硅化镍;欧姆触点;n型碳化硅;制造;能带;带隙Project supported by the National Basic Research Program of China (Grant No~2002CB311904), the National Defense Basic Research Program of China (Grant No~51327010101) and the National Natural Science Foundation of China (Grant No~60376001).2006-09-192006-10-30This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure axe formed on N-wells created by N^＋ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi2 films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance Pc of NiSi contact to n-type 6H-SiC as low as 1.78× 10^-6Ωcm^2 is achieved after a two-step annealing at 350 ℃for 20 min and 950℃ for 3 min in N2. And 3.84×10-6Ωcm^2 for NiSi2 contact is achieved. The result for sheet resistance Rsh of the N＋ implanted layers is about 1210Ω/□. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.     

Island-growth of SiCGe films on SiC

SiCGe ternary alloys have been grown on SiC by hot-wall low-pressure chemical vapour deposition. It has been found that the samples cxhibit an island configuration, and the island growth of SiCGe epilayer depends on the processing parameters such as the growth temperature. When the growth temperature is comparatively low, the epilayer has two types of islands： onc is spherical island; another is cascading triangular island. With the increase of the growth temperature, the islands change from spherical to cascading triangular mode. The size and density of the islands depend on the growth duration and GeH4 flow-rate. A longer growth time and a larger GeH4 flow-rate can increase the size and density of the island in thc initial stage of the epitaxy. In our case, The optimal growth for a high density of uniform islands occurred at a growth temperature of 1100℃ for l-minute growth, with 10 SCCM GeH4, resulting in a narrow size distribution （about 30nm diameter） and high density （about 3.5 ×10^10 dots/cm2）. The growth follows Stranski- Krastanov modc （2D to 3D modc）, both of the islands and the 2D growth layer have face-centred cubic structure, and the critical thickness of the 2D growth layer is only 2.5 nm.[第一段]     

SiCp增强铝基复合材料切削加工中刀—屑摩擦模型及其磨损性能研究

通过分析ＳｉＣ颗粒增强铝基复合材料切削过程中刀具与切屑之间的摩擦特点,经过某些合理简化,提出了以紧密接触为主要特征的摩擦特性方程式,通过与切削试验及计算机仿真结果对比,验证了该公式的合理性;并采用ＳＥＭ等手段分析了ＳｉＣ颗粒及晶须增强铝基复合材料及刀具的磨损机理。结果表明：复合材料的耐磨性能优于铝合金;Ｋ类硬质合金刀具有可用于粗加工和半精加工,并须用较低切削速度和较大进给量;而精加工时须采用聚晶金     

含镍碳化硅复合材料的干摩擦特性

采用销－盘摩擦磨损试验机,在１５～６００℃范围内,对反应烧结碳化硅（Ｓｉ／ＳｉＣ）及含镍碳化硅（Ｓｉ／ＳｉＣ－Ｎｉ）复合材料的干摩擦性能进行了研究,结果表明,Ｎｉ使Ｓｉ／ＳｉＣ复合材料的摩擦学性能得到改善,且ＳｉＣ的粒度越小,Ｓｉ／ＳｉＣ－Ｎｉ复合材料的自润滑性能越好。同时通过对磨屑的Ｘ射线相分析和磨损表面形貌与成分的扫描同镜／能谱分析,考察了Ｓｉ／ＳｉＣ和Ｓｉ／ＳｉＣ／Ｎｉ复合材料的干摩擦过程。     

SiC材料及器件研制的进展

作为第三代的半导体材料－ＳｉＣ具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点,在高频、大功率、耐高温、抗辐照的半民体器件及紫外探测器和短波发光二级管等方面具有广泛的应用前景,文章综述了半导体ＳｉＣ材料生长及其器件研制的概况。     

碳化硅/炭黑水基凝胶注模浆料性能的研究

研究了碳化硅/炭黑凝胶注模成型中低粘度、高固含量浆料的制备工艺,分析讨论了碳化硅颗粒级配、分散剂、pH值以及有机单体含量对浆料流变性能的影响,成功地制备出固相体积分数为60;,表观粘度为680mPa·s的碳化硅/炭黑稳定浆料.     

SOI基3C-SiC薄膜的光谱表征

本文探索在SOI基片上通过顶层Si直接与碳源反应,反向外延生长3C-SiC薄膜的工艺条件和技术。采用LPCVD技术,以CH4和H2混合气体为反应源,在SOI衬底上生长3C-SiC薄膜。采用X射线衍射分析仪、场发射扫描电子显微镜和傅里叶红外光谱来研究样品的结构和性质;并研究反应前、后样品电压-电容特性的变化。研究结果表明,通过反向外延的方法,能够在SOI基片反向外延生长得到3C-SiC薄膜,但目前的工艺条件有待进一步的改善。     

新型催化剂载体碳化硅的研究现状

碳化硅（SiC）具有较好的导热性,较强的抗氧化性及很高的机械强度,作为新型催化剂载体在强放热、高腐蚀性、液相催化等反应中有很好的应用前景,近年来受到广泛关注。目前关于SiC载体的研究主要集中在三个方面：（1）高比表面积多孔SiC材料的制备;（2）基于现有商业化低比表面积SiC材料的表面碳化;（3）对SiC载体进行杂原子掺杂等表面功能化。本文中,我们主要对以上三个方面的研究现状做简要综述。重点介绍SiC的结构与物理化学性质,SiC作为新型载体在非均相催化反应中的应用以及基于6H-SiC（0001）衬底的表面化学研究。     

快恢复二极管的发展

二极管作为最基本的器件,在电子电路中的应用非常广泛。而随着IGBT和MOS管等器件的发展,对二极管的方向恢复性能的要求越来越高。本文介绍了提高快恢复二极管恢复特性的两种主流技术的发展,即载流子寿命控制技术和发射极效率控制技术。并通过仿真对阳极发射效率控制技术进行了验证,最后对SiC材料的二极管进行了介绍和展望。