排列组合解题中的转化与对应

一、从数图形谈起: 　　引例:右图中共有多少个矩形? 　　分析:本题完成一件事指的是数出图中矩形的个数.可以分类完成,但要注意不重不漏.……     

2007年高考数学天津卷简评

2007年天津高考数学试卷结构仍然是:选择题、填空题、解答题题量分别为10、6、6共22道题,分值分别为50分、24分、76分,在这一点上可以说保持稳定.试题特点如下: 　　……     

2007年普通高等学校招生全国统一考试 (天津卷)数学(理工类)

一、选择题:共10个小题,满分50分.1.i是虚数单位,12-i3i=()A.1 iB.-1 iC.1-iD.-1-i2.设变量x,y满足约束条件x-y≥-1,x y≥1,3x-y≤3,则目标函数z=4x y的最大值为()A.4B.11C.12D.143.“θ=23π”是“tanθ=2cos2π θ”的()A.充分而不必要条件B.必要而不充分条件C.充分必要条件D.既不充分也不必要条件4.设双曲线xa22-by22=1(a>0,b>0)的离心率为3,且它的一条准线与抛物线y2=4x的准线重合,则此双曲线的方程为()A.1x22-2y42=1B.4x82-9y62=1C.x32-23y2=1D.x32-y62=15.函数y=log2x 4 2(x>0)的反函数是()A.y=4x-2x 1(x>2)B.y=4x-2x 1(x>1)C…     

6H碳化硅衬底上硅碳锗薄膜的生长特性研究

采用低压热壁化学气相沉积法,在6H-SiC衬底(0001)面上生长了不同温度(1100—1250℃),不同GeH₄流量比(6.3%—25%)的SiCGe薄膜样品,研究了SiCGe薄膜的表面形貌、生长特性以及样品中Ge组分含量的变化. 扫描电镜测试结果表明,SiCGe薄膜在低温下倾向于岛状生长模式,随着生长温度提高,岛状生长逐渐过渡到层状生长模式,同时伴有岛形状和密度的变化. X射线光电子能谱测试得出SiCGe样品中的Ge含量约为0.15％—0.62％,在其他参数不变的情况下,样品的G 关键词： 碳化硅 化学气相沉积 反相边界 岛状生长     

2007年高考数学天津卷简评

2007年天津高考数学试卷结构仍然是:选择题、填空题、解答题题量分别为10、6、6共22道题,分值分别为50分、24分、76分,在这一点上可以说保持稳定.试题特点如下: 　　……     

说说高中数学中各种角定义及范围

一、问题的提出已知 :直三棱柱Ａ1 Ｂ1 Ｃ1 -ＡＢＣ ,ＡＢ =ＡＣ =ＡＡ1 且Ａ1 Ｂ与ＡＣ1 所成的角为 6 0° ,则∠ＣＡＢ的度数为 (　　 ) .(Ａ) 30°　 (Ｂ) 6 0°(Ｃ) 90°　 (Ｄ) 4 5°一位高三教师找到我 ,说这道题用补形法补成正方体 ,很易解答 ,选 (Ｃ) ,但有的学生提出 :如图分别取Ａ1 Ｂ1 ,Ａ1 Ａ ,Ａ1 Ｃ1 ,ＡＢ之中点Ｍ、Ｅ、Ｆ、Ｇ .连接ＥＧ、ＥＦ ,则由题给条件易知∠ＧＥＦ =6 0° ,若设ＡＢ =ＡＣ =ＡＡ1 =1,则ＥＦ =ＥＧ =22 ,∴ＧＦ= 22 ,但这样在Ｒｔ△ＧＭＦ中直角边ＧＭ =Ａ1 Ａ =1就会大于斜边ＧＦ =22 .究竟错在哪里 …     

SiC based Si/SiC heterojunction and its rectifying characteristics

The Si on SiC heterojunction is still poorly understood, although it has a number of potential applications in electronic and optoelectronic devices, for example, light-activated SiC power switches where Si may play the role of an light absorbing layer. This paper reports on Si films heteroepitaxially grown on the Si face of (0001) n-type 6H-SiC substrates and the use of B₂H_6 as a dopant for p-Si grown at temperatures in a range of 700--950~\du. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) tests have demonstrated that the samples prepared at the temperatures ranged from 850~℃ to 900~℃ are characterized as monocrystalline silicon. The rocking XRD curves show a well symmetry with FWHM of 0.4339° Omega. Twin crystals and stacking faults observed in the epitaxial layers might be responsible for widening of the rocking curves. Dependence of the crystal structure and surface topography on growth temperature is discussed based on the experimental results. The energy band structure and rectifying characteristics of the Si/SiC heterojunctions are also preliminarily tested.     

生长温度对6H-SiC上SiCGe薄膜发光特性的影响

利用低压化学气相淀积工艺在6H-SiC衬底成功制备了SiCGe薄膜。通过光致发光(PL)谱研究了生长温度对SiCGe薄膜发光特性的影响。结果表明:生长温度为980,1030,1060℃的SiCGe薄膜的室温光致发光峰分别位于2.13,2.18,2.31eV处;通过组分分析和带隙计算,认定该发光峰来自于带间辐射复合,证实了改变生长温度对SiCGe薄膜带隙的调节作用。同时,对SiCGe薄膜进行了变温PL测试,发现当测试温度高于200K时,发光峰呈现出蓝移现象。认为这是不同机制参与发光所造成的。     

6H-SiC衬底上多晶Si薄膜热壁CVD间隔生长与结构表征

在热壁LPCVD系统中利用间隔生长法在6H-SiC衬底上淀积Si薄膜,采用XRD、SEM、激光共聚焦显微镜和拉曼光谱对Si薄膜的表面形貌和结构进行表征.结果表明:相比于连续生长法,用间隔法制备Si薄膜的速率有所降低,但表面粗糙度有所减小,同时晶粒尺寸也增大.XRD测试结果表明:间隔法可以控制薄膜生长的择优取向.Raman光谱测试结果表明:采用间隔法且断源时间控制在30 s时,生长温度900℃,H2∶ SiH4 =400∶20 sccm时生长Si薄膜的Raman半峰宽最小.     

First-principles calculations on Si(220) located 6H–SiC(10■0)surface with different stacking sites

6H–SiC(10ˉ10) surface and Si(220)/6H–SiC(10ˉ10) interface with different stacking sites are investigated using first-principles calculations. Surface energies of 6H–SiC(10ˉ10)(case I, case II, and case III) are firstly studied and the surface calculation results show that case II and case III are more stable than case I. Then, the adhesion energies, fracture toughness values, interfacial energies, densities of states, and electronic structures of Si(220)/6H–SiC(10ˉ10) interfaces for three stacking models(AM, BM, and CM) are calculated. The CM model has the highest adhesion energy and the lowest interfacial energy, suggesting that the CM is stronger and more thermodynamically stable than AM and BM. Densities of states and the total charge densities give evidence that interfacial bonding is formed at the interface and that Si–Si and Si–C are induced due to the hybridization of C-2p and Si-3p. Moreover, the Si–C is much stronger than Si–Si at the interface,implying that the contribution of the interfacial bonding mainly comes from Si–C rather than Si–Si.