基于Berreman矩阵的双折射薄膜光谱响应特性计算

采用Berreman特征矩阵方法,通过数值计算研究了双折射薄膜的反射、透射等光谱响应特性。依据电磁场理论的电场分量、磁场分量的界面连续条件,推导了光波在各向异性双轴薄膜中的Berreman转移矩阵,用以分析含有各向异性介质层的复杂薄膜系统的光学性质。这些矩阵递推关系包含了界面处的多点反射,适用于一般的各向异性的多层膜系统,包括入射媒质或基底为各向异性的情况。在文中给出了各向同性入射媒质双轴各向异性膜层一各向同性基底薄膜系统的计算结果,验证了该计算方法的可行性,以此作为进一步研究各向异性薄膜和相关光学薄膜器件设计的理论基础。     

Yb∶YAG超快闪烁晶体研究进展与展望

Yb3+离子掺杂YAG晶体(Yb∶YAG)作为一种性能优良的激光晶体已广泛应用于高效、高功率激光领域。最新研究表明,Yb∶YAG晶体响应时间可达0.411 ns,其优良的超快闪烁特性在超快脉冲辐射探测、惯性约束核聚变、空间辐射探测、核反应动力学等领域的应用引起了广泛关注,使得Yb∶YAG晶体成为超快闪烁材料研究的热点。关于Yb∶YAG的闪烁特性,文章在系统介绍Yb∶YAG作为超快闪烁晶体研究进展和发光机理的基础上,归纳总结了掺杂种类、浓度、后处理工艺、辐照、格位尺寸大小、温度等对Yb∶YAG晶体闪烁性能的影响。然后,针对Yb∶YAG目前存在的问题,给出相应的解释并提出通过离子共掺调控来改善其闪烁性能的方法。最后,对Yb∶YAG超快闪烁晶体未来的发展方向进行了展望。     

Pinhole defects in MPCVD diamond films

Diamond films were deposited in microwave plasma chemical vapor deposition (MPCVD) method on plain silicon substrates with (100) orientation. And the pinhole defects on them were investigated by optical microscopy and scanning electron microscopy (SEM). X-ray masks were fabricated with the films deposited by us. We found the pinhole defects in the film destroyed the gold absorber. The corrosion-resistance tests conducted in 30% KOH solution under 80℃showed that the diamond films with pinhole defects have lower corrosion-resistance. In addition, the possible mechanism of the formation of pinhole defects in diamond films was discussed. And we deduced that the defects on substrates, competitive growth of multi-phase in diamond films, lattice dislocation between substrates and diamond films could be associated with the defect formation.     

Pinhole defects in MPCVD diamond films

Diamond films were deposited in microwave plasma chemical vapor deposition(MPCVD)method on plainsilicon substrates with(100)orientation.And the pinhole defects on them were investigated by opticalmicroscopy and scanning electron microscopy(SEM).X-ray masks were fabricated with the films depositedby us.We found the pinhole defects in the film destroyed the gold absorber.The corrosion-resistance testsconducted in 30% KOH solution under 80℃ showed that the diamond films with pinhole defects have lowercorrosion-resistance.In addition,the possible mechanism of the formation of pinhole defects in diamondfilms was discussed.And we deduced that the defects on substrates,competitive growth of multi-phasein diamond films,lattice dislocation between substrates and diamond films could be associated with thedefect formation.     

用离子束溅射方法制备的钛薄膜表面形貌分析

用离子束溅工艺在K9玻璃基片上沉积Ti薄膜，并用原子力显微镜对其表面形貌进行测量，通过数值相关运算，发现在此工艺条件下薄膜生长界面为各向同性的自仿射分形表面，并用粗糙指数、横向相关长度和标准偏差粗糙度对薄膜样品表面进行定量描述。利用自仿射分形表面的相关函数对数值运算的结果进行拟合，得出Ti薄膜生长界面的粗糙度指数α＝0．72，相应的分形维数Df＝2．28，并由此得到在离子束溅射工艺下Ti薄膜屑于守恒生长的结论，其生长动力学过程可用Kuramoto—Sivashinsky方程来描述。     

溅射粒子能量对金属Mo薄膜表面特性的影响

利用原子力显微镜研究了不同溅射离子能量对Mo薄膜表面形貌的影响.利用特殊设计的夹具，在同一真空内完成所有薄膜样品的制备，减少了多次沉积过程对薄膜生长特性的影响 .对原子力显微镜测量得到的表面高度数据进行相关运算，从统计角度定量地研究了不同沉积能量下Mo薄膜表面特性.结果表明，薄膜表面具有典型的分形特征，在相关运算的基础上给出表面的分形维数、水平相关长度、界面宽度等参数.其中，屏栅电压为500V时制备 的薄膜样品与300和700?V时制备的薄膜样品表面的界面宽度及水平相关长度具有倍数差别，但三种溅射电压下薄 关键词： 离子束溅射 钼 薄膜 分形     

Zintl相化合物α-BaZn2P2的合成、结构和性能

通过Sn助熔剂法在高温下合成一种Zintl相化合物α-BaZn₂P₂,通过X射线单晶衍射确定其晶体结构与α-BaCu₂S₂同构,属于Pnma空间群。α-BaZn₂P₂的晶格参数为：a=0.976 78（5）nm,b=0.413 34（2）nm,c=1.060 55（5）nm。与高温相β-BaZn₂P₂的层状结构不同,低温相α-BaZn₂P₂具有三维网格结构。其中ZnP₄四面体通过共边和共顶2种方式连接形成阴离子框架,Ba²⁺作为阳离子填隙其中。基于密度泛函理论计算了该化合物的能带结构和态密度,结果表明该化合物是窄带隙半导体（E_g=0.4 eV）。另外,DSC和变温XRD结果表明高温下α-BaZn₂P₂分解为Ba₄P₅,ZnP₄等二元相。     

Tunable Anisotropic Absorption of Ag-Embedded SiO2 Thin Films by Oblique Angle Deposition

Ag-embedded SiO2 thin films are prepared by oblique angle deposition. Through field emission scanning electron microscopy （SEM）, an orientated slanted columnar structure is observed. Energy-dispersive x-ray （EDX） analysis shows the Ag concentration is about 3% in the anisotropic SiO2 matrix. Anisotropic surface plasma resonance （SPR） absorption is observed in the Ag-embedded SiO2 thin films, which is dependent on polarization state and incidence angle of two orthogonal polarized lights and the deposition angle. This means that optical properties and anisotropic SPR absorption can be tunable in Ag-embedded SiO2 thin films. Broadband polarization splitting is also observed and the transmission ratio Tp/Ts between p- and s-polarized lights is up to 2.7 for thin films deposited at a = 70°, which means that Ag-embedded SiO2 thin films are a promising candidate for thin film polarizers.     

微缺陷对薄膜滤光片环境稳定性的影响

用热蒸发方法沉积了薄膜滤光片.并将样品分别在去离子水中浸泡10天和30天.通过分光光度计、光学暗场显微镜、及扫描电子显微镜等多种测试手段,对诱导透射滤光片在潮湿环境下的稳定性进行了研究.实验发现,在潮湿环境下滤光片产生的膜层分离都是从薄膜中微缺陷点处开始发生和发展的,微缺陷是影响滤光片环境稳定性的重要原因之一,其中杂质和针孔是滤光片中两种最常见的微缺陷.EDS能谱分析进一步表明,薄膜中杂质缺陷成分即为Al2O3膜料本身,所以不能推测,薄膜沉积中的喷溅可能是微缺陷产生的根本原因,抑制喷溅可以有效提高薄膜滤光片的环境稳定性.最后还用扩散理论对微缺陷引起滤光片失效的机理进行了分析.