临界情形的非齐次半线性椭圆型方程的多解性

考虑有界区域Ω RN 上非齐次半线性椭圆型方程 -Δu(x) =up(x) λf(x)在齐次混合边值条件 (即第三边值问题 ) u n au Ω =0下正解的存在性 ,其中α ,λ≥ 0 ,p=N 2N- 2 ,N>2 ,f(x) ∈L∞(Ω) .证明了存在常数λ >0 ,当λ∈ (0 ,λ )时 ,上述问题至少存在两个正解     

从学科融合的角度构建结构化的教学内容*——以“自然资源的开发利用”为例

教学内容的结构化是促进学生从化学学科知识向化学学科核心素养转化的关键措施。自然资源的开发利用以地球的圈层结构为纽带,让学生在问题驱动下,通过阅读、分析教材等活动,逐次学习关于岩石圈、水圈中蕴藏的部分资源开发利用的问题,最后以地球为原点,畅想未来资源的探寻之路。使地理学科知识自然地融合在化学教学中,拓宽学生视野,实现学科间的融合。     

时滞微分方程和脉冲时滞微分方程解的存在唯一性

本文研究了时滞微分方程的问题.利用上下解作为耦合初始迭代得到一个收敛于此方程解的单调序列的方法,获得了时滞方程和脉冲时滞微分方程解的存在唯一性结果,推广了文献[3,5]的相关结果.     

催化裂化汽油脱硫助剂的研究

中国80％成品汽油来自流化催化裂化（FCC）工艺，随着原料的多元化，大量中东高硫原油进入中国市场，硫质量分数过高的问题日益突出。     

一类非自治p-Laplace系统的同宿轨道

利用临界点理论的极小化原理讨论一类非自治p-L ap lace系统d/(dt)(q(t)p-2q(t))-l(t)q(t)p-2q(t)+▽W(t,q(t))=0非平凡同宿轨道的存在性,其中,p>1,t∈R,q∈Rn,l:R→(0,+∞),W(t,q(t))=a(t)q(t)γ且a(t):R→R+是一非负连续函数,1<γ相似文献   

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices

The effect of nitric oxide(NO) annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor(MOS) devices has been investigated using the time-dependent bias stress(TDBS),capacitance–voltage(C–V),and secondary ion mass spectroscopy(SIMS).It is revealed that two main categories of charge traps,near interface oxide traps(Nniot) and oxide traps(Not),have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples.The Nniotare mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics,which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor.However,Not is mainly responsible for the TDBS induced C–V shifts.Electrons tunneling into the Not are hardly released quickly when suffering TDBS,resulting in the problem of the threshold voltage stability.Compared with the Ar-annealed sample,Nniotcan be significantly suppressed by the NO annealing,but there is little improvement of Not.SIMS results demonstrate that the Nniotare distributed within the transition layer,which correlated with the existence of the excess silicon.During the NO annealing process,the excess Si atoms incorporate into nitrogen in the transition layer,allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot.     

ZrO2在Rh/γ-Al2O3催化剂中对NO催化还原反应的作用

测定了含ZrO2的Rh/γ-Al2O3催化剂上NO+C2H4和NO+C2H4+O2的反应活性,并应用TPR、XRD、BET比表面等表征了ZrO2的加入方式和晶型对Rh/γ-Al2O3催化剂活性和结构的影响。结果表明,ZrO2的加入一定程度地抑制了Rh3+与γ-Al2O3之间的相互作用和γ-Al2O3的相变,提高了催化剂的热稳定性,明显提高了850℃老化样品的NO+C2H4反应活性。对于NO+C2H4+O2反应,含ZrO2样品的选择还原活性却较低,表明反应机理不同,而且ZrO2对C2H4的深度氧化有促进作用,但老化后活性下降幅度比不含ZrO2的样品小。     

NECESSARY AND SUFFICIENT CONDITIONS FOR OSCILLATIONS OF PARABOLIC PARTIAL DIFFERENTIAL EQUATIONS WITH DELAY

In this paper, by making use of the integral method and some results of the functional differential equations, oscillatory properties of the solutions of certain parabolic partial differential equations with multi-delays are investigated and a series of necessary and sufficient conditions for oscillations of the equations are established. The results fully indicate that the oscillations are caused by the delay and hence reveal the varied difference between these equations and those without delay.     

非线性中立双曲型泛函微分方程解的振动判据

讨论一类多滞量非线性中立双曲型泛函微分方程解的振动性质，获得了其一切解振动的充分条件；指出了与普通双曲型偏微分方程质的差异。     

Molecular simulation of alkyl monolayers on the Si(111) surface YUAN

The preparation of monolayers on silicon surface is of growing interest for potential applica-tions in biosensor or semiconductor technology[1—5]. The alkyl modified Si(111) surfaces[6—10] can be obtained using the thermal, catalyzed, or photochemical reaction of hydrogen-terminated sili-con with alkenes, Grignard reagents, and so on. At the same time, the monolayer properties on Si(111) surface have been studied by a variety of experimental methods[8—10] such as X-ray photo-electron spect…