The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays

The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes （LEDs） have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi- quantum well （MQW） LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence （PL） spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows： 1） the improvement in crystal quality, namely the reduction in V-defects; 2） the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3） the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.     

Structural characterization of Al_(0.55)Ga_(0.45)N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy

Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction(HRXRD)and transmission electron microscopy(TEM);the epilayer was grown on GaN/sapphire substrates using a high-temperature A1 N interlayer by metal organic chemical vapor deposition technique.The mosaic characteristics including tilt,twist,heterogeneous strain,and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map(RSM).According to Williamson-Hall plots,the vertical coherence length of AlGaN epilayer was calculated,which is consistent with the thickness of AlGaN layer measured by cross section TEM.Besides,the lateral coherence length was determined from RSM as well.Deducing from the tilt and twist results,the screw-type and edge-type dislocation densities are 1.0×10~8 cm~(-2) and 1.8×10~(10) cm~(-2),which agree with the results observed from TEM.     

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical （PAC） etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed anal- ysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. The intensity of photoluminescence spectra of GaN etched with hexagonal pyramids significantly increases compared to that of as-grown GaN due to multiple scattering events, high quality GaN with pyramids and the Bragg effect.     

GaN纳米柱发光特性

用自组装的Ni纳米岛做掩模通过ICP刻蚀得到GaN纳米柱,采用扫描电子显微镜(SEM)观测其形貌,室温下光致发光(PL)谱测量研究样品发光特性。结果表明,室温下GaN 纳米柱的发光强度是体材料的2.6倍。为了修复刻蚀损伤,用KOH对样品进行湿法处理,发现经KOH处理的纳米柱与处理前相比变得更直,且其发光较处理之前进一步增强。为了研究其原因,分别对KOH处理前后的样品进行变温PL谱的测量,发现湿法处理后发光增强是由于内量子效率的提高引起的。     

UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate

We demonstrate an ultra-violet light-emitting diode （UV-LED） fabricated on a bulk GaN substrate with elec- troluminescence （EL） emission centered at about 340 nm. The UV-LED exhibits low reverse leakage current on the order of 10^-9 A under -5 V at room temperature, which can be explained by the low defect density in the epi-structure. The evolution of EL spectra as a function of injection current levels reveals the improved heat dissipation of the LEDs with vertical geometry on the bulk GaN substrate. The unusual increase of EL intensity at elevated temperatures can be explained by thermally assisted p-dopant ionization.     

Effect of Rapid Thermal Annealing on the Formation of In-N Clusters in Strained InGaNAs

A model for the effect of rapid thermal annealing on the formation of In-N clusters in strained GalnNAs is developed according to thermodynamics. In the model, the lowest annealing temperature influencing the redistribution of atoms is introduced. The average variation of energy for formation per In-N bond is obtained by fitting the experimental values. Using the present model, we calculate the average number of nearest-neighbor In atoms per N atom after annealing. The obtained results are compared with the experiment. The qualitative analysis and quantitative analysis are in good agreement with each other. The model is helpful to explain the essence of the blueshift caused by annealing.     

Optical and Structural Properties of Cr-Doped GaN Grown by HVPE Method

Single crystalline Cr-doped GaN fihns are successfully grown by hydride vapor phase epitaxy. The structure analysis indicates that the film is uniform without detectable Cr precipitates or clusters and the Cr atoms are substituted for Ga sites. The impurity modes in the range 510 530cm^-1 are observed by the Raman spectra. The modes are assigned to the host lattice defects caused by substitutional Cr. The donor-aeceptor emission is found to locate at Ec - 0.20 eV by analyzing the photoluminescence spectrum obtained at different temperatures, and the emission is attributed to the structural defects caused by CrGa-VN complex. The superconductor quantum interference device results show that the Cr-doped GaN film without detectable Cr precipitates or clusters exhibits paramagnetic properties.     

Growth and Characterization of InN Thin Films on Sapphire by MOCVD

Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.     

用于紫外探测器DBR结构的高质量AlGaN材料MOCVD生长及其特性研究

利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同工艺条件下的高质量AlGaN材料的制备.得到了无裂纹的全组分Al_xGa_1-xN(0<x<1)薄膜.通过XRD，SEM，AFM等测量分析方法系统研究了生长工艺参数对材料的结构质量、组分、厚度和表面形貌的影响.分析了不同生长工艺对AlGaN材料特性的影响.研制的高质量AlGaN材料在紫外探测器的DBR结构应用中得到比较好的特性.     

Structural and Magnetic Properties of Codoped ZnO based Diluted Magnetic Semiconductors

Zn1-xCoxO （x = 0.01, 0.02, 0.05, 0.10 and 0.20） diluted magnetic semiconductors are prepared by the sol-gel method. The structural and magnetic properties of the samples are studied using x-ray diffraction （XRD）, extended x-ray absorption fine structure （EXAFS） and superconducting quantum interference device （SQUID）. The XRD patterns does not show any signal of precipitates that are different from wurtzite type ZnO when Co content is lower than x = 0.10. An EXAFS technique for the Co K-edge has been employed to probe the local structures around Co atoms doped in ZnO powders by fluorescence mode. The simulation results for the first shell EXAFS signals indicate that Zn sites can be substituted by Co atoms when Co content is lower than x = 0.05. The SQUID results show that the samples （x 〈 0.05） exhibit clear hysteresis loops at 300K, and magnetization versus temperature from 5 K to 350K at H = 100 Oe for the sample x = 0.02 shows that the samples have ferromagnetism above room temperature. A double-exchange mechanism is proposed to explain the ferromagnetic properties of the samples.