3D NAND制程中选择性刻蚀工艺的SiO2回沾问题研究进展

作为半导体市场中主要存储芯片之一,NAND已从2D发展到3D。3D NAND的立体存储结构提高了芯片容量、性能和可靠性。在3D NAND的交替堆栈结构中,需通过氮化-物氧化物的选择性刻蚀获得层间介质层,堆栈层数越多,芯片性能越好,但高层堆栈的刻蚀均匀性也更难保持,此时易出现SiO₂在氧化层端头再沉积的回沾现象,层间结构被破坏,影响器件性能。要达到更高层数必须减少回沾,探究该过程及其影响因素成为关键所在。本文综述了3D NAND制程中氮化硅选择性刻蚀工艺的发展现状和现有研究成果,强调了控制硅含量对防止回沾的重要性,介绍了相关理论模型,提供模拟预测。为深入分析其中的化学反应,本文对相关的SiO₂溶液化学进行了概述,总结了聚硅酸形成的影响因素,强调胶凝曲线能反应其聚合行为,据此可研究怎样通过影响硅酸聚合行为或聚硅酸在氧化层表面的沉积行为来防止回沾,以对未来研究起到理论指导作用.     

THERMODYNAMIC ANALYSIS AND EXPERIMENTAL VERIFICATION FOR SYNTHESIZING SILICON NITRIDE NANOPARTICLES USING RF PLASMA CVD

Silicon nitride nanoparticles were synthesized by radio-frequency (RF) plasma chemical vapor deposition (PCVD) using silicon tetrachloride and ammonia as precursors, and argon as carrier gas. By assuming chemical thermodynamic equilibrium in the system, a computer program based on chemical thermodynamics was used to calculate the compositions of the system at different initial concentrations and final temperatures. At first, five elements and thirty-four species were considered. The effects of temperatures, and concentrations of ammonia, hydrogen and nitrogen on the equilibrium compositions were analyzed. It was found that the optimal reaction temperature range should be 1200 to 1500 K to obtain the highest conversion and yield of Si3N4. The inlet position of ammonia should be lower than that of silicon tetrachloride, and both should be located at the tail of the plasma torch. The best moleratio of ammonia to silicon tetrachloride was found to be about 6. Later, the influences of water (.and oxygen) were considered, and 17 additional species were included in the computations. It was found that oxygen or water content in the raw materials should be as low as possible in order to have high nitride content in the produced Si3N4. Nitrogen or hydrogen might be used to replace some or even all the argon to improve the yield of silicon nitride and reduce the cost. The ratio of ammonia to silicon tetrachloride should be high enough to obtain high conversion, but not excessively high to reduce the oxygen content due to the existence of water in ammonia. The simulated results were verified bv experiments.     

混合式陶瓷轴承的研制及其台架试验研究Ⅰ．制备陶瓷球最佳工艺参数的选择

为了加速航空发动机技术的发展，研制混合式陶瓷轴承是一个值得重视的研究方向。研制这种轴承的关键在于陶瓷球的高效高精度加工。在这方面，常规的磨削加工方法很难满足实用要求。因此，利用一种新的磁流体研磨法加工Ｓｉ３Ｎ４陶瓷球，首先对这种方法的基本原理与装置和研磨试验条件与方法作了简要阐述，进而通过一系列的试验研究，考察了将Ｓｉ３Ｎ４陶瓷球毛坯研磨成成品球的研磨效率分别随驱动轴转动速度、加工载荷和磨粒粒径等的变化规律，筛选出磁硫体研磨法加工氮化硅陶瓷球的最佳工艺参数：驱动轴转动速度为５０００ｒ／ｍｉｎ，加工载荷为２Ｎ，磨粒粒径为０．０４ｍｍ，研磨时间为５分钟。研究表明，磁流体研磨法加工陶瓷球的精度高，研磨效率是常规研磨法的近３０倍。研究结果在发展陶瓷材料的工程应用及其摩擦学研究方面，都具有良好的参考价值和实用价值。     

羟基化对Si3N4粉体水相分散性的影响

通过施加硝酸有效地使氮化硅（Si₃N₄）粉末的表面羟基化,以改善在水性介质中的分散性。与天然粉末相比,羟基化粉末在水性介质中产生更稳定的胶体分散。傅里叶变换红外光谱和X射线光电子能谱结果表明,随着羟基改性,Si₃N₄粉末的羟基含量显著增加。这有助于防止Si₃N₄粉末在水性介质中聚集。此外,热重分析表明羟基化Si₃N₄粉末的羟基含量比天然粉末高68.8%。Si₃N₄粉末的表面亲水性通过羟基改性而增强,并且粉末分散性随着羟基含量的增加而提高。     

镶嵌有纳米硅的SiN_x薄膜光致发光的温度依赖特性研究

采用对靶磁控溅射法在单晶硅衬底上沉积镶嵌有纳米硅的氮化硅薄膜,然后在形成气体FG(10%H2,90%N2)气氛中进行450℃常规热退火50min。通过荧光光谱仪测得的稳态/瞬态光致发光(PL)谱研究了镶嵌有纳米硅的氮化硅(SiNx)薄膜样品光致发光特性。结果表明,样品的发光过程可以归因于纳米硅的量子限制效应发光和与缺陷相关的发光。随着激发光能量的增加,PL谱峰位发生蓝移,表明较小粒度的纳米硅发光比例增加;温度的降低会抑制非辐射复合过程,提高辐射复合几率,因此发光寿命延长,发光强度呈指数增加;随着探测波长的减小,样品的发光寿命则明显缩短,表明纳米硅的量子限制效应发光对温度有很强的依赖性。     

GaN基MIS紫外探测器的电学及光电特性

制备了GaN基金属-绝缘层-半导体(MIS)结构紫外探测器,并测量了其暗电流和光谱响应。通过分析其暗电流,发现在反偏情况下,其主要电流输运机制为隧穿复合机制;在正偏情况下,随着偏压的增大,电流输运机制从隧穿机制变为空间电荷限制电流机制。光谱响应测试结果显示,该探测器在-5 V的偏压下,在315 nm处获得了最大响应度170 mA/W,探测度为2.3×10¹² cm·Hz^1/2·W^-1。此外,还研究了不同厚度I层对器件光电压的影响,结果表明,光电压受隧穿机制与漏电流机制的共同制约。     

Investigations of high-pressure and high-temperature behaviors of the newly-discovered willemite-Ⅱ and post-phenacite silicon nitrides

Using the first-principles method of the plane-wave pseudo-potential, the structural properties of the newly-discovered willemite-Ⅱ Si3N4 （wⅡ phase） and post-phenacite Si3N4 （δ phase） are investigated. The α phase is predicted to undergo a first-order α→wⅡ phase transition at 18.6 GPa and 300 K. Within the quasi-harmonic approximation （QHA）, the α→wⅡ phase boundary is also obtained. When the well-known β→γ transition is suppressed by some kinetic reasons, the β→δ phase transformation could be observed in the phase diagram. Besides, the temperature dependences of the cell volume,thermal expansion coefficient, bulk modulus, specific heat, entropy and Debye temperature of the involved phases are determined from the non-equilibrium free energies. The thermal expansion coefficients of wⅡ-Si3N4 show no negative values in a pressure range of 0-30 GPa, which implies that the wⅡ-Si3N4 is mechanically stable. More importantly, the δ-Si3N4 is found to be a negative thermal expansion material. Further experimental investigations may be required to determine the physical properties of wⅡ- and δ-Si3N4 with higher reliability.     

基于等离子体增强化学气相沉积技术的光电子器件多层抗反膜的设计和制作

针对光电子器件端面抗反镀膜的要求,研究了基于等离子体增强化学气相沉积(PECVD)技术的多层抗反膜的设计和制作.首先,对影响SiN_x折射率的因素进行了实验研究,确定了具有大折射率差的SiO₂/SiN_x材料的PECVD沉积条件.根据理论计算分析,设计了四层SiO₂/SiN_x抗反膜结构,能够在70 nm的波长范围内实现低于10^-4的反射率     

氮化硅粉中微量杂质金属的ICP-AES测定

本文论述了应用ICP-AES法测定氮化硅中微量杂质元素的分析技术,考察了样品处理及元素间相互干扰。采用板波模式超声雾化进样、去溶剂技术,ICP-AES法同时测定Si_3N_4中Al、Ca、Cr、Cu、Fe、Mg、Mn、Mo、Sr、Ti、V和Zr十二种杂质元素。各元素相对标准偏差为2.5～9.8%,回收率为84～108%。