脉冲激光沉积法制备的ZnO薄膜的低阈值电抽运紫外随机激射

分别采用直流反应溅射法和脉冲激光沉积法在硅衬底上沉积ZnO薄膜, 用X射线衍射、扫描电镜、光致发光谱等手段对两种方法沉积的ZnO薄膜的结晶状态、 表面形貌和光致发光等进行了表征. 进一步对比研究了以上述两种方法制备的ZnO薄膜作为发光层的金属-绝缘体-半导体结构器件的电抽运紫外随机激射. 结果表明, 与以溅射法制备的ZnO薄膜作为发光层的器件相比, 以脉冲激光沉积法制备的ZnO薄膜为发光层的器件具有更低的紫外光随机激射阈值电流和更高的输出光功率. 这是由于脉冲激光沉积法制备的ZnO薄膜中的缺陷更少, 从而显著地减少了紫外光在光散射过程中的光损耗. 关键词： 随机激射 ZnO薄膜 脉冲激光沉积 溅射     

New approach to Q-P （P-Q） ordering of quantum mechanical operators and its applications

In this paper, we introduce a new way to obtain the Q-P （P-Q） ordering of quantum mechanical operators, i.e., from the classical correspondence of Q-P （P-Q） ordered operators by replacing q and p with coordinate and momentum operators, respectively. Some operator identities are derived concisely. As for its applications, the single （two-） mode squeezed operators and Fresnel operator are examined. It is shown that the classical correspondence of Fresnel operator’s Q-P （P-Q） ordering is just the integration kernel of Fresnel transformation. In addition, a new photo-counting formula is constructed by the Q-P ordering of operators.     

含有5-甲基-3-吡唑甲酸的铅(Ⅱ)配合物:合成、结构和荧光性质

在不同含N辅助配体的存在下,将5-甲基-3-吡唑甲酸(H_2MPCA)与相应的铅(Ⅱ)盐反应制得了2个新的配合物:[Pb(HMPCA)_2(H_2O)_2]·H_2O (1)和[Pb(HMPCA)_2(phen)]·H_2O (2)(phen=菲咯啉)。双核配合物1中双核[Pb(μ_2-HMPCA)]_2单元在一对Pb…O次级键的作用下形成了一维链状结构,这些一维链在氢键的作用下进一步自组装成2D超分子结构。而单核化合物2在Pb…O次级键的作用下形成了Pb_2O_2平面,它们在π…π和氢键作用下堆积形成3D超分子结构。考察了配合物1和2的热稳定性、荧光性能。     

Ag2CO3/ZnBiO复合材料的制备及可见光催化性能的研究

采用新型一锅溶胶-凝胶法制备了Zn掺杂的β-Bi_2O_3(记为ZnBiO),并以ZnBiO为前驱体,利用简单的化学沉淀法制备了不同质量比的Ag_2CO_3/ZnBiO复合材料.通过XRD、SEM、DRS和PL对样品的晶体结构、微观形貌、光吸收能力及荧光性质进行了表征,并通过可见光催化降解亚甲基蓝实验探讨了Ag_2CO_3/ZnBiO复合材料的光催化作用机制.     

A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm

By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region （centred at about 12 μm）. After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8 μm to 12 μm （centred at 10 μm） within wide incidence angles （about 50°）, is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.     

Vacuum-gap-based lumped element Josephson parametric amplifier

We propose a lumped element Josephson parametric amplifier with vacuum-gap-based capacitor.The capacitor is made of quasi-floating aluminum pad and on-chip ground.We take a fabrication process compatible with air-bridge technology,which makes our design adaptable for future on-chip integrated quantum computing system.Further engineering the input impedance,we obtain a gain above 20 dB over 162-MHz bandwidth,along with a quasi quantum-limit noise performance.This work should facilitate the development of quantum information processing and integrated superconducting circuit design.     

粗骨料取代下的高性能再生混凝土率敏性研究

采用分离式霍普金森压杆(SHPB)试验方法对粗骨料取代率为0%、30%、50%和100%的再生混凝土进行冲击试验,研究了应力-应变关系曲线、动态抗压强度、动态弹性模量以及破坏形态受应变率影响的变化规律。试验表明,应力-应变关系曲线开始段呈线性关系,随应变率的增大,线性段斜率增大,持续范围扩大,峰值应力变大;峰值应力具有率敏性,随应变率增大,峰值应力不断增加,取代率对峰值应力的影响差别不明显;动态弹性模量也具有率敏性,呈正相关关系,取代率不同,其率敏性程度有所差异;随着应变率增大,试件破坏程度随之加剧,从完整无裂缝到瞬间崩裂成碎块。     

甲基环己烷在9∽15.5 eV能量区的真空紫外光电离研究

利用具有同步辐射源的反射式飞行时间质谱仪，研究甲基环己烷的真空紫外光电离和光解离. 观测到母体离子C₇H₁₄⁺和碎片离子C₇H₁₃⁺，C₆H₁₁⁺，C₆H₁₀⁺，C₅H₁₀⁺，C₅H₉⁺，C₄H₈⁺，C₄H₇⁺和C₃H₅⁺的光电离效率曲线. 测定甲基环己烷的电离能为9.80±0.03 eV，通过光电离效率曲线确定其碎片离子的出现势. 在B3LYP/6-31G(d)水平上对过渡态、中间体和产物离子的优化结构进行表征，并使用G3B3方法计算其能量. 提出主要碎片离子的形成通道. 分子内氢迁移和碳开环是甲基环己烷裂解途径中最重要的过程.