| A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm |
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| 引用本文： | 张洁,;徐少辉,;杨仕谦,;王连卫,;曹志申,;詹鹏,;王振林.A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm[J].中国物理快报,2008,25(4):1317-1320. |
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| 作者姓名： | 张洁 ;徐少辉 ;杨仕谦 ;王连卫 ;曹志申 ;詹鹏 ;王振林 |
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| 基金项目： | Supported by the National Science Foundation of China under Grant No 50672027, and Shanghai Shuguang Plan under Grant No 04SG29, and Shanghai Leading Academic Disciple Project under Grant No B411. |
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| 摘 要： | By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region （centred at about 12 μm）. After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8 μm to 12 μm （centred at 10 μm） within wide incidence angles （about 50°）, is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.
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| 关 键 词： | 多孔硅 电介质 阳极腐蚀法 温度 光致发光材料 |
| 收稿时间： | 2007-10-16 |
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