Ku波段扩展互作用速调管设计

 微波电真空器件随着频率的升高,不但聚焦系统难以实现,而且其输出增益和带宽都受到很大的限制,要解决该问题,建议采用扩展互作用速调管,采用分布作用谐振腔技术来扩展其工作带宽和提高增益。利用CST和粒子模拟(PIC)3维软件对其工作在Ku波段扩展互作用速调管进行了设计和仿真,在工作电压30 kV、束流8.5 A的条件下,聚焦系统采用幅值为0.48 T的周期反转永磁聚焦,在输入功率为5.1 W时,得到效率为23%,3 dB带宽为306 MHz,频带内最大增益为39 dB,其峰值功率为58 kW的微波输出。     

X射线散射法测量超光滑平面

介绍了掠入射X射线散射法(GXRS法)测量超光滑表面的原理及基于商业用X射线衍射仪改造而成的实验装置。以3片不同粗糙度的硅片作为实验样品,分别应用一级矢量微扰理论和改进的Harvey-Shack理论对其散射分布进行处理,所得结果与原子力显微镜测量结果基本相符。分析了探测器接收狭缝的宽度和入射光发散度对实验结果的影响,随着探测器接收狭缝宽度和入射光发散度的减小,测量误差呈指数迅速减小。在所测量的空间频率范围内,功率谱密度（PSD）函数的误差随频率的增加而减小。     

高平均功率固体激光功率和光束质量关系研究进展

 固体激光的一个重大发展方向和目标是实现“三高”(高平均功率、高光束质量和高效率)激光同时输出,结合相关研究工作和进展,着重论述了固体激光输出功率和光束质量的关系,给出了功率升高、光束质量非线性下降是当前“三高”固体激光研究的一个基本科学技术问题。围绕这一基本问题,评述了一些重要技术途径和手段,并探讨了实现高平均功率高光束质量固体激光输出的可能有效途径。     

一种提高相对论返波管功率容量的方法

 对相对论返波管实验中射频击穿现象进行了分析和数值模拟研究,发现谐振反射器和慢波结构的局部场增强诱导了场致电子发射,引起了金属表面的射频击穿,通过研究分析,提出采用分布反馈式谐振反射器,并采用梯形倒角非均匀慢波结构替换正弦慢波结构的方法来抑制射频击穿。数值模拟研究表明,在微波功率2 GW时,改进后的反射器最大场强由1.4 MV/cm降低为570 kV/cm,慢波结构表面最大电场由1.1 MV/cm降低到780 kV/cm。改进后的结构在二极管电压765 kV时获得了微波功率2.2 GW、脉宽45 ns的实验结果,微波功率和脉宽得到显著提升。     

Evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistors by structure function method＊

The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.     

Transport in graphene nanostructures

Graphene nanostructures are promising candidates for future nanoelectronics and solid-state quantum information technology. In this review we provide an overview of a number of electron transport experiments on etched graphene nanostructures. We briefly revisit the electronic properties and the transport characteristics of bulk, i.e., two-dimensional graphene. The fabrication techniques for making graphene nanostructures such as nanoribbons, single electron transistors and quantum dots, mainly based on a dry etching ??paper-cutting?? technique are discussed in detail. The limitations of the current fabrication technology are discussed when we outline the quantum transport properties of the nanostructured devices. In particular we focus here on transport through graphene nanoribbons and constrictions, single electron transistors as well as on graphene quantum dots including double quantum dots. These quasi-one-dimensional (nanoribbons) and quasi-zero-dimensional (quantum dots) graphene nanostructures show a clear route of how to overcome the gapless nature of graphene allowing the confinement of individual carriers and their control by lateral graphene gates and charge detectors. In particular, we emphasize that graphene quantum dots and double quantum dots are very promising systems for spin-based solid state quantum computation, since they are believed to have exceptionally long spin coherence times due to weak spin-orbit coupling and weak hyperfine interaction in graphene.     

High-power diode-end-pumped Tm：YAP and Tm：YLF slab lasers

Diode-end-pumped continuous-wave(CW) Tm:YAP and Tm:YLF slab lasers are demonstrated. The a-cut Tm:YAP and Tm:YLF slabs with doping concentrations of 4 at.-% and 3.5 at.-%,respectively,are pumped by fast-axis collimated laser diodes at room temperature. The maximum CW output powers of 72 and 50.2 W are obtained from Tm:YAP and Tm:YLF,respectively,while the pump power is 220 W,corresponding to the slope efficiencies of 37.9% and 26.6%,respectively.     

Studies on the mechanisms of powerful terahertz radiations from laser plasmas

A survey on the mechanisms of powerful terahertz (THz) radiation from laser plasmas is presented.Firstly,an analytical model is described,showing that a transverse net current formed in a plasma can be converted into THz radiations at the plasma oscillation frequency.This theory is applied to explain THz generation in a gas driven by two-color laser pulses.It is also applied to THz generation in a tenuous plasma driven by a chirped laser pulse,a few-cycle laser pulse,a DC/AC bias electric field.These are well verified by particle-in-cell simulations,demonstrating that THz radiations produced in these approaches are nearly single-cycles and linear polarized.In the chirped laser scheme and the few-cycle laser scheme,THz radiations with the peak field strength of tens of MV/cm and the peak power of gigawatt can be achieved with the incident laser intensity less than 10 17 W/cm 2.     

Design and analysis of a novel tunable optical power splitter

A novel tunable optical power splitter,with a Y-branch waveguide based on the total internal reflection and a microprism with tunable index refraction,is presented.Numerical simulation of its optical performance shows that a high dynamic range,low optical loss,and relatively low wavelength-dependence can be achieved.This component offers numerous advantages such as ease for fabrication,low cost,and compact size,which are very useful for potential application in integrated optical devices.