基于流量门限的提前预留竞争解决机制(英文)

基于小尺寸缓存的提前预留机制是有效的竞争解决方案.为支持区分服务,本文研究了两优先级提前预留机制的阻塞模型,分析了变化缓存尺寸与载荷比率条件下光突发交换网络核心节点的阻塞性能.为降低两优先级提前预留机制的突发丢弃率,提出一种基于流量门限的提前预留机制.数值分析确定了合理的缓存尺寸与流量门限,实现了高、低优先级间的缓存使用平衡.仿真结果表明:与原有提前预留机制相比,基于流量门限的提前预留机制保持了全流量状态范围内的阻塞性能,并明显降低了中、低流量状态内的突发丢弃率.     

4s和4p半核态引入价态(导致杂化指数降低)可以减弱Mon (n=2∽18)团簇的二聚体现象的第一性原理研究

钼团簇因具有独特的结构、电子和物理化学性质,被期待在未来的纳米科技中扮演重要角色,但是它们的基态结构至今还存在争议. 本研究采用粒子群优化(CALYPSO)方法对Mo_n (n=2∽18)团簇的晶体结构进行全局域能量最小化搜索,并结合第一性原理方法进一步优化. 计算表明：当4s和4p半核态不作为价态时,Mo_n (n=2∽18)团簇有明显的二聚体趋势,原子数为偶数的团簇往往是“幻数”团簇,具有较高的稳定性;但是,将4s和4p电子作为价电子后,平均杂化指数H_sp、H_sd和H_pd显著降低,二聚体趋势急剧减弱. 本文报道了Mo_n(n=11,14,15)团簇的新基态结构,证明了半核态对于Mo_n团簇是十分重要的.     

区间数排序法在土壤重金属生态风险分析中的应用

将土壤重金属含量以区间形式表示,并引入区间数排序法,建立了一种基于区间数排序法的土壤重金属生态风险分析模型,并对土壤重金属进行生态风险分析.结果表明,7种重金属的区间排序向量排序为PbCdAsZnCuCrNi,重金属Pb、Cd、As和Zn的生态风险较大.此分析结果符合当地的实际情况,同时与地积累指数法的结果相符,说明区间数排序法在土壤重金属生态风险分析的应用是合理的,其分析结果具有可靠性,也为土壤重金属的风险管理提供理论依据.     

CoOOH用作阴极催化剂对非水性锂-氧气电池性能的影响

利用工艺简单,成本低廉的共沉淀法制得CoOOH,并用作非水性锂-氧气电池阴极催化剂。通过恒流充放电、线性伏安扫描（LSV）和电化学阻抗（EIS）测试研究了电极的电化学性能。结果表明：由于CoOOH能够明显提高氧气还原反应（ORR）的催化活性,与未使用CoOOH的电极相比较,使用CoOOH为催化剂的电极首次放电容量高达5 093 mAh·g^-1,提高了1.7倍。电池的充电过电压降低了约460 mV,充电可逆性得到增强,充放电可逆性提高,使得循环性能得到显著改善。     

简述铁氧体纳米材料的制备方法

近年来,铁氧体材料,受到广泛的重视,尤其是在主磁记录、永磁体、微波方面的应用,具有广阔的前景和研究价值.随着各项研究的发展,对铁氧体的要求也越来越高.     

MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation

By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer, and storage in the four-transistor active pixel sensor (4T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes (PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates (TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion (FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μ m test pixel designed in 0.11 μ m CIS process.     

基于动态光谱法的多波长脉搏血氧饱和度测量

目前临床上血氧饱和度的无创检测主要基于双波长的脉搏血氧饱和度测量原理,但其检测精度仍然需要进一步的探究和完善。近年来,国内外的很多研究者采用三波长甚至八波长的方法测量血氧饱和度,从某种程度上减小了误差。动态光谱法作为一种新型血液成分无创检测方法,能消除受试者个体差异和测量环境等的影响,在血红蛋白浓度的无创检测研究中取得了很好的效果。基于动态光谱法对多波长下脉搏血氧饱和度检测进行了研究：对60名重症监护患者进行动态光谱采集以及动脉抽血分析血氧饱和度值;采用高灵敏度光纤光谱仪,采集受试者指端透射多波长下的光谱信息;以单拍提取法提取波长范围为606.44~987.55 nm的动态光谱;以动脉血气分析中血氧饱和度值为参考真值,建立血氧饱和度与多波长动态光谱数据的组合间隔偏最小二乘校正模型;得到预测集的相对误差为±0.017 6,而两波长测量装置监护仪上得到的数据相对误差为±0.116 4。结果表明：利用高灵敏度光纤光谱仪采集多波长光谱信息,用动态光谱法进行数据预处理,进行多波长血氧饱和度检测,有效降低了血氧饱和度的测量误差。     

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions

To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor(MOSFET) with a Schottky-drian(SD) and SD-connected semisuperjunctions(SDD-semi-SJ),named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional(2D) numerical simulations.The SD contacted with the n-pillar exhibits the Schottky-contact property,and that with the p-pillar the Ohmic-contact property.Based on these features,the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions(SJ) or semisuperjunctions(semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage(BV) and the specific on-resistance(R_(on)A).For a given pillar width and n-drift thickness,there exists a proper range of n-drift concentration(N),in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of R_(on)A-BV compared to the predication of SJ MOSFET in the forward applications.And what is much valuable,in this proper range of N,the desired BV and good trade-off could be achieved only by determining the pillar thickness,with the top assist layer thickness unchanged.Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of R_(on)A-BV improvement in SD-D-semi-SJ MOSFET.These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.     

1,3-二(炔丙基氧)苯与4,4'-二叠氮甲基联苯的聚合反应及聚合物性能的研究

研究了1,3-二(炔丙基氧)苯(BPOB)与4,4'-二叠氮甲基联苯(DAMBP)的本体聚合行为. 核磁共振氢谱(¹H NMR)表征了聚合物的结构, 通过傅立叶红外技术(FT-IR)观察了反应过程中的基团变化情况, 采用差示扫描量热技术(DSC)研究了聚合反应动力学, 在较低温度(80 ℃)下二元叠氮与二元炔发生了1,3-偶极环加成聚合反应, 生成了主链含三唑环的聚合物; 利用Kissinger法和Crane法处理得到了反应的动力学参数: 反应级数为0.92, 反应活化能E_a为79.8 kJ• mol^－1, 频率因子A为1.26×10¹⁰ min^－1. 利用凝胶渗透色谱(GPC)、动态热机械分析(DMA)和热重分析方法(TGA)研究了聚合产物的性能. 结果表明, 聚合物的数均分子量达4.22×10⁴, 聚合物有较高的玻璃化转变温度和良好的热稳定性, 玻璃化转变温度达到131 ℃, 热分解温度(T_d5)达355 ℃