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在pH 10.0的缓冲介质中,以235 nm和360 nm为发射波长测定时,邻菲啰啉试剂的荧光因与镁(Ⅱ)反应生成了络合物而得到增敏,其增敏的程度(△F)与镁(Ⅱ)的质量浓度之间在0.1~2.0 mg·L-1范围内呈线性关系.此反应的检出限(3s/b)为0.038 mg·L-1.应用此方法测定了3种不同来源的水样中镁的含量,测定值的相对标准偏差(n=6)在1.3%~1.6%之间.在此样品的基础上用标准加入法做回收试验,测得回收率在98%~103%之间. 相似文献
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一种新的无结构决策方法—属性层次模型AHM.与Saaty提出的层次分析法AHP是不同的.AHM既不需要计算特征向量,也不需要进行一致性检验,运算量小,科学性强.通过对一个质量评估问题的分析,说明属性层次模型AHM是简便易行、行之有效的决策方法. 相似文献
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The title compound N-2-thiophenesulfonyl-α-L-phenylalanine ethyl ester has been synthesized. Complete assignments were achieved by IR, MS, 1H NMR and single-crystal X-ray diffraction analyses. Using MTT assay, the inhibitory rate of the title compound on K562 cells (chronic myeloid 1eukemic cells) was measured and the result of preliminary bioassay showed that the title compound possesses antiproliferation effects on K562 cells. In order to investigate the relationship between structure and activity of the target compound, we report its crystal structure and biological behavior in the present paper. Crystallographic data: C15H17NO4S2, Mr = 339.42, monoclinic, space group P21, flack = –0.15(12), a = 5.7916(10), b = 11.5078(19), c = 12.924(2) , β = 97.781(3)o, Z = 2, V = 853.4(2) 3, Dc = 1.321 g/cm3, F(000) = 356, –7≤h≤7, –10≤k≤14, –15≤l≤15, R = 0.0628, wR = 0.1540 and μ(MoKα) = 0.327 mm-1. The molecule comprises a benzene and a thiofuran rings, and the intramolecular N(1)–H(1A)…O(1) makes a five-membered ring of O(1)–C(6)–C(5)–N(1)–H(1A). 相似文献
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根据无穷限反常积分∫a^+∞f(x)dx收敛的柯西准则和定积分的性质,讨论被积函数f(x)当x→∞时。的极限状态,并得出当无穷限反常积分∫a^+∞f(x)dx收敛且f(x)在[a,+∞)上连续,或者无穷限反常积分∫a^+∞f(x)dx绝对收敛时,存在数列{xn}∩[a,+∞]且xn→+∞(n→∞),使limn→∞xnf(xn)=0. 相似文献
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Effect of STI-induced mechanical stress on leakage current in deep submicron CMOS devices 总被引:1,自引:0,他引:1 下载免费PDF全文
The shallow trench isolation (STI) induced mechanical stress
significantly affects the CMOS device off-state leakage behaviour. In
this paper, we designed two types of devices to investigate this
effect, and all leakage components, including sub-threshold leakage
($I_{\rm sub})$, gate-induced-drain-leakage ($I_{\rm GIDL})$, gate
edge-direct-tunnelling leakage ($I_{\rm EDT})$ and
band-to-band-tunnelling leakage ($I_{\rm BTBT})$ were analysed. For
NMOS, $I_{\rm sub}$ can be reduced due to the mechanical stress
induced higher boron concentration in well region. However, the GIDL
component increases simultaneously as a result of the high well
concentration induced drain-to-well depletion layer narrowing as well
as the shrinkage of the energy gap. For PMOS, the only mechanical
stress effect on leakage current is the energy gap narrowing induced
GIDL increase. 相似文献
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Heine定理的基本形式、函数极限定义及确界原理,文中讨论了单调函数的单侧极限存在的充要条件,通过证明可见,相应的结果可表示为更强的形式. 相似文献