低能质子辐照对ZnO白漆光学性能退化的影响

 通过光致荧光光谱解谱和X射线光电子能谱（XPS）分析,研究了ZnO白漆经受能量低于200 keV低能质子辐照过程中氧空位缺陷的形成与演化过程。XPS解析表明质子辐照后晶格氧减少,光致荧光光谱解析表明锌空位减少,说明ZnO白漆中氧空位数量增加,且双电离氧空位能够捕获价带中的电子转变为单电离氧空位,使单电离氧空位逐渐成为辐照产生的主要缺陷。质子辐照使ZnO白漆中氧空位数量增加,而氧空位易捕获电子形成色心,从而导致光学性能下降。     

GaInP/GaAs/Ge三结太阳电池的电子辐照损伤效应

研究了1 MeV和1.8 MeV电子辐照下GaInP/GaAs/Ge三结太阳电池的辐照损伤效应.电学性能研究结果表明,GaInP/GaAs/Ge三结太阳电池的开路电压、短路电流和最大功率随辐照剂量的增加发生明显衰降,在1 MeV电子辐照下剂量为1×10¹⁵cm^-2时,与辐照前相比最大功率衰降了17.7%.暗I-V特性分析表明,高能电子辐照下三结电池串、并联电阻的变化是引起太阳电池电学性能衰降的重要原因.光谱响应分析结果表明,GaInP 关键词： GaInP/GaAs/Ge太阳电池 电子辐照 电学性能 光谱响应     

Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons

The radiation effects of the metal-oxide-semiconductor (MOS) and the bipolar devices are characterised using 8~MeV protons, 60~MeV Br ions and 1~MeV electrons. Key parameters are measured {\it in-situ} and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contribution to MOS and bipolar devices. The irradiation particles, which cause larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.     

扩展de Bruijn图的生成树和广播

扩展de Bruijn图EB(d,m;h1,h2,…,hk)是de Bruijn图的一种推广,它是一种再要的网络互连结构.本文主要研究扩展de Bruijn图中的有根生成树,证明了对任何顶点u和任意整数r:2≤r≤d,扩展de Bruijn图都有以u为根且深度为[log(?),d]·max{hi:1≤i≤k}的rk-叉生成树,并由此获得了扩展de Bruijn图的广播时间的上界.     

电子辐照能量对Kapton/Al热控涂层光学性能的影响

 研究了电子辐照时，电子能量与累积通量对Kapton/Al热控涂层光学性能的影响。采用原位测量的手段记录了辐照前后的光谱反射系数。试验结果表明，电子辐照后Kapton/Al热控涂层的反射性能,在太阳光谱辐射强度较大的300~1 200nm波长区间产生较大程度退化。在电子辐照作用下，作为离子导电型聚合物的 Kapton薄膜表面没有发现辐照充电效应。辐照后涂层材料存在“退火效应”，或称“漂白效应”。Kapton/Al涂层太阳吸收比的变化量与电子辐照累积通量的变化关系成幂函数形式,其系数与指数的极大值与极小值分别出现在电子能量为50keV附近。在辐照累积通量相同时，该变化量随辐照电子能量的提高而增大。     

带电粒子辐照下石英玻璃和镀铝膜反射镜光学性能研究

提出低能带电粒子辐照下石英玻璃非弹性电离损伤的物理模型和速率方程，给出了电离效应产生带电离子、电子浓度的解析表达式.讨论了光密度与吸收剂量之间的变化关系，并与实验结果进行了比较.还给出光学反射镜反射率表达式及数学模拟结果.利用所建立的模型，可以定量描述低能带电粒子辐照特别是综合辐照时石英玻璃和镀金属膜反射镜光学性能随辐照剂量的变化情况.     

Degradation mechanisms of current gain in NPN transistors

An investigation of ionization and displacement damage in silicon NPN bipolar junction transistors (BJTs) is presented. The transistors were irradiated separately with 90-keV electrons, 3-MeV protons and 40-MeV Br ions. Key parameters were measured {\em in-situ} and the change in current gain of the NPN BJTS was obtained at a fixed collector current (I_{\rm c}=1~mA). To characterise the radiation damage of NPN BJTs, the ionizing dose D_{\i} and displacement dose D_{\d} as functions of chip depth in the NPN BJTs were calculated using the SRIM and Geant4 code for protons, electrons and Br ions, respectively. Based on the discussion of the radiation damage equation for current gain, it is clear that the current gain degradation of the NPN BJTs is sensitive to both ionization and displacement damage. The degradation mechanism of the current gain is related to the ratio of D_{\rm d}/(D_{\rm d}+D_{\rm i}) in the sensitive region given by charged particles. The irradiation particles leading to lower D_{\rm d}/(D_{\rm d}+D_{\rm i}) within the same chip depth at a given total dose would mainly produce ionization damage to the NPN BJTs. On the other hand, the charged particles causing larger D_{\rm d}/(D_{\rm d}+D_{\rm i}) at a given total dose would tend to generate displacement damage to the NPN BJTs. The Messenger--Spratt equation could be used to describe the experimental data for the latter case.     

电子辐照对ZnO/K_2SiO_3型热控涂层光学性能的影响

研究了电子辐照对 Zn O/K2 Si O3 型热控涂层光学性能的影响。采用 1 0 ,3 0 ,50和 70 ke V的电子对试样进行辐照。在辐照前后对每一个试样的光谱反射系数进行了原位测量。根据 Johnson太阳光谱分布计算了涂层的太阳光谱吸收系数。分析了电子能量对光谱反射系数和太阳光谱吸收系数的影响 ,并对红外区光谱反射系数的变化结果进行了讨论。实验结果发现电子辐照后 Zn O/K2 Si O3 涂层的光学性能发生严重退化 ,退化程度取决于电子能量 ,随电子能量的增大而增大。     

激光工艺参数对钛合金表面NiCrBSi合金熔覆层组织及硬度的影响

在TC4合金表面进行了激光熔覆NiCrBSi合金涂层的试验 ,利用SEM和XRD等对熔覆层的微观组织进行了分析 ,测试了熔覆层的显微硬度。结果表明 ,激光工艺参数对熔覆层的组织和硬度有极大的影响 ,随稀释率的增加 ,激光熔覆层中形成了TiB2 和TiC等颗粒增强相 ,熔覆层的硬度明显提高。     

调节熵函数法

１．引言 考虑如下极小极大问题这里ｆｉ（ｘ）是Ｒｎ中连续可微的函数,ｍ≥２是正整数（Ｐ）是一类比较典型的非光滑优化问题,是许多实际问题的数学模型．同时,线性规划的 Ｋａｒｍａｒｋａｒ标准型的对偶也是（Ｐ）的形式,光滑约束优化问题的一类重要罚函数法也是将问题化为类似（Ｐ）的形式．所以,如何有效地求解（Ｐ）,是一个重要问题．近些年发展起来的嫡函数法（或称凝聚函数法）是一种较新颖而实用的方法．它借助信息论中 Ｓｈａｎｎｏｎ熵的概念,推导出一族光滑的极大熵函数Ｆｐ（ｘ）,且Ｆｐ（ｘ）一致逼近要极小化的非光…