Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons |
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| Authors: | Li Xing-Ji GengHong-Bin Lan Mu-Jie Yang De-Zhuang He Shi-Yu and Liu Chao-Ming |
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| Affiliation: | Space Materials & Environment Engineering Laboratory, Harbin Institute of Technology, Harbin 150001, China; School of Astronautics, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: | The radiation effects of the metal-oxide-semiconductor
(MOS) and the bipolar devices are characterised using 8~MeV protons,
60~MeV Br ions and 1~MeV electrons. Key parameters are measured {\it
in-situ} and compared for the devices. The ionising and nonionising
energy losses of incident particles are calculated using the Geant4
and the stopping and range of ions in matter code. The results of
the experiment and energy loss calculation for different particles
show that different incident particles may give different
contribution to MOS and bipolar devices. The irradiation particles,
which cause larger displacement dose within the same chip depth of
bipolar devices at a given total dose, would generate more severe
damage to the voltage parameters of the bipolar devices. On the
contrary, the irradiation particles, which cause larger ionising
damage in the gate oxide, would generate more severe damage to MOS
devices. In this investigation, we attempt to analyse the
sensitivity to radiation damage of the different parameter of the
MOS and bipolar devices by comparing the irradiation experimental
data and the calculated results using Geant4 and SRIM code. |
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| Keywords: | radiation effects MOS and bipolar devices ionisation
damage displacement damage |
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