镍基合金－碳化铬复合涂层耐磨特性的研究

用真空熔烧法在４５＃钢表面制取了镍基合金－碳化铬复合涂层，用扫描电子显微镜和Ｘ射线衍射仪分析了这种涂层的微观结构、物相组成和性能，并对这种涂层的耐磨特性进行了试验研究．结果表明：镍基合金－碳化铬复合涂层与底材形成了牢固的冶金结合，同时还含有较高比例的硬质相；碳化铬的加入使涂层的耐磨性显著提高，在给定的试验条件下分别于干摩擦和２０＃机械油润滑时，镍基合金－碳化铬复合涂层的耐磨性比４５＃钢的分别高５倍和１０倍以上     

Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method

A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed. The project supported by the National Natural Science Foundation of China (10472126) and the Knowledge Innovation Program of Chinese Academy of Sciences. The English text was polished by Keren Wang     

Modeling and simulations of interface properties with first‐principles electronic structure computations

We report extensive first‐principles electronic structure modeling and calculations for the SiC–SiO₂ interface, a solid–solid interface formed during oxidation of silicon carbide (SiC). The interface modeling provides atomic‐scale understanding about the nature of the interface defects as well as passivation effects due to the modification of the interface bonding. In particular, simulation results show that incorporation of hydrogen and fluorine decreases the defect density, thus enhancing the performance of SiC‐based electronic devices. Copyright © 2013 John Wiley & Sons, Ltd.     

陶瓷人工关节的跑合和摩擦性能研究

研究３种生物陶瓷材料（氧化铝，氮化硅和碳化硅）在水中的跑合及其摩擦特性。结果表明：跑合前，氮化硅－氮化硅摩擦副的起始摩擦因数和稳态摩擦因数最高，碳化硅－碳化硅磨擦副的起始摩擦因数和稳态摩擦因数最低，跑合后，氧化铝－氧化铝摩擦副的稳态摩擦因数最高，碳化硅－碳化硅摩擦副的起始摩擦因数和稳态摩擦因数仍然最低。当摩擦副表面均加工到超光洁状态（表面粗糙度Ｒａ为纳米数量级）时，碳化硅－碳化硅摩擦副的摩擦性能最     

Effects of hydroxyl groups and hydrogen passivation on the structure,electrical and optical properties of silicon carbide nanowires

The effects of hydrogen and hydroxyl passivation on the structure, electrical and optical properties of SiCNWs were investigated. The passivation performance of different atoms (groups) were discussed by analyzing the distribution of electronic states and the polarity of chemical bonds. The results show that passivation can improve the stability of SiCNWs structure, and the effect of hydroxyl is better than hydrogen passivation. And hydrogen and hydroxyl passivation both increase the band gap of SiCNWs, and the changing trend of band gap is relevant to the polarity of the covalent bond formed by the passivation of surface atoms. Moreover, passivation enhances the stability of the optical properties of SiCNWs, resulting in narrowing of light absorption, photoconductivity and other spectra, and the response peak shifts to the deep ultraviolet region, which means that hydrogen or hydroxyl passivation of SiCNWs is likely to be a candidate material for deep ultraviolet micro-nano optoelectronic devices.     

Polymer-precursor-derived (am-) SiC/TiC composites for resistive heaters in large volume multi-anvil high pressure/high-temperature apparatus

(Amorphous-)SiC/TiC composites for resistive tubular heaters in HP/HT experiments were obtained via a polymer-precursor process. A slurry consisting of a commercial SiC-precursor polymer (allylhydridopolycarbosilane, AHPCS) and TiC powder as conductive filler was applied to the inner walls of zirconia insulation tubes, using a centrifugation-casting method. Resistive coatings with homogeneous thickness of ～200 μm were obtained. The heaters were tested in octahedral multi-anvil assemblies at ～10 GPa with simultaneous recording of heating voltage and current. Up to a maximum temperature of ～1800°C they showed temperature vs. power characteristics reproducible from batch to batch, with resistance decreasing from 0.08 to 0.02 Ω during heating. Microstructural characterization using SEM/EDX was carried out on the recovered SiC/TiC composite material, as well as on pristine resistive heaters directly after coating and curing to 230°C, and after additional pyrolysis at 900°C in argon. In all cases, a stable composite microstructure of an interpenetrating network of TiC particles with either silicon carbide polymer precursor or an amorphous SiC phase were found. The composites were characterized by XRD and thermogravimetry. Further improvement of coating procedure and materials combination (precursor/filler/insulator substrate) may result in advanced coatings, operational well beyond 2000°C.     

Modification of σ‐Donor Properties of Terminal Carbide Ligands Investigated Through Carbide–Iodine Adduct Formation

The terminal carbide ligands in [(Cy₃P)₂X₂Ru≡C] complexes (X=halide or pseudohalide) coordinate molecular iodine, affording charge‐transfer complexes rather than oxidation products. Crystallographic and vibrational spectroscopic data show the perturbations of iodine to vary with the auxiliary ligand sphere on ruthenium, demonstrating the σ‐donor properties of carbide complexes to be tunable.     

Synergistic Effect of Boron Nitride and Carbon Domains in Boron Carbide Nitride Nanotube Supported Single-Atom Catalysts for Efficient Nitrogen Fixation

Developing the low-cost and efficient single-atom catalysts (SACs) for nitrogen reduction reaction (NRR) is of great importance while remains as a great challenge. The catalytic activity, selectivity and durability are all fundamentally related to the elaborate coordination environment of SACs. Using first-principles calculations, we investigated the SACs with single transition metal (TM) atom supported on defective boron carbide nitride nanotubes (BCNTs) as NRR electrocatalysts. Our results suggest that boron-vacancy defects on BCNTs can strongly immobilize TM atoms with large enough binding energy and high thermal/structural stability. Importantly, the synergistic effect of boron nitride (BN) and carbon domains comes up with the modifications of the charge polarization of single-TM-atom active site and the electronic properties of material, which has been proven to be the essential key to promote N₂ adsorption, activation, and reduction. Specifically, six SACs (namely V, Mn, Fe, Mo, Ru, and W atoms embedded into defective BCNTs) can be used as promising candidates for NRR electrocatalysts as their NRR activity is higher than the state-of-the art Ru(0001) catalyst. In particular, single Mo atom supported on defective BCNTs with large tube diameter possesses the highest NRR activity while suppressing the competitive hydrogen evolution reaction, with a low limiting potential of −0.62 V via associative distal path. This work suggests new opportunities for driving NH₃ production by carbon-based single-atom electrocatalysts under ambient conditions.     

Efficient production of nanoporous silicon carbide from rice husk at relatively low temperature

Nanoporous silicon carbide with a specific surface area of up to 186.45 m² g⁻¹ has been efficiently synthesized from waste rice husk using a magnesiothermic reduction at 950 °C as a key step. Throughout the entire process, the recovery rates of silicon, potassium and phosphorus from rice husk can reach 88.46, 91.5 and 65.5%, respectively. Turning rice husk waste into a real treasure, this promising method for producing porous SiC protects the environment and brings economic benefits.