碳化硅和碳化硼在电催化中的应用

燃料电池是具有广泛应用前景的新能源技术。碳载铂基催化剂（Pt/C）是最常用的燃料电池电极催化剂,不过Pt/C稳定性较差、且成本高昂,严重限制了燃料电池的规模化应用。共价型碳化物碳化硅和碳化硼,由于具有极强的共价键,其物化稳定性优异,成为制备高稳定性、低成本的燃料电池催化剂的重要基础材料。本文总结了相关研究成果,介绍了碳化硅和碳化硼的独特优势,讨论了相关研究的发展方向。     

熔盐电解SiO2/C直接制备SiC纳米线

采用纳米SiO₂和酚醛树脂为原料制备酚醛树脂裂解碳纳米SiO₂复合阴极(硅碳物质的量的比为1:1),直接电解PFC/SiO₂复合阴极,在900℃熔融盐CaCl₂中,恒槽压2.0V下电解,制备出碳化硅纳米线。采用场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HRTEM)及其附带的能谱仪、X射线分析衍射仪(XRD)和拉曼光谱(Raman)对产物的组成、形貌、微观结构等进行了表征。结果表明:碳化硅纳米线呈立方晶体结构,其直径为4~13nm,长可达数微米;室温下该纳米线在415nm和534nm附近有宽的发光峰。最后,讨论了碳化硅纳米线的生成机制。     

SiO2/炭泡沫和SiC/炭泡沫复合材料的制备及表征

对炭泡沫为支撑骨架的氧化硅气凝胶(SiO₂/炭泡沫)和碳化硅(SiC/炭泡沫)复合材料分别采用XRD、SEM、激光导热仪、万能力学试验机进行物相、微观结构、热学及力学性能方面的表征.结果表明:所制备的SiO₂/炭泡沫与原炭泡沫相比,具备更高的抗压强度(14.95 MPa)和更低的室温热导率(0.44 W·m^-1·K^-1).SiC/炭泡沫材料则保持了较高的抗压强度值(14.66 MPa),其在 1 200 ℃下具备极低的高温热导率(2.18W·m^-1·K^-1).热重分析表明,SiC/炭泡沫在氧化氛围中到610 ℃才发生质量的损失,而内部炭发生完全烧蚀的温度高达844 ℃,这表明该材料的抗氧化性能远好于纯的炭泡沫材料.     

Carbon Dynamics on the Molybdenum Carbide Surface during Catalytic Propane Dehydrogenation

The effect of the gas‐phase chemical potential on surface chemistry and reactivity of molybdenum carbide has been investigated in catalytic reactions of propane in oxidizing and reducing reactant mixtures by adding H₂, O₂, H₂O, and CO₂ to a C₃H₈/N₂ feed. The balance between surface oxidation state, phase stability, carbon deposition, and the complex reaction network involving dehydrogenation reactions, hydrogenolysis, metathesis, water‐gas shift reaction, hydrogenation, and steam reforming is discussed. Raman spectroscopy and a surface‐sensitive study by means of in situ X‐ray photoelectron spectroscopy evidence that the dynamic formation of surface carbon species under a reducing atmosphere strongly shifts the product spectrum to the C₃‐alkene at the expense of hydrogenolysis products. A similar response of selectivity, which is accompanied by a boost of activity, is observed by tuning the oxidation state of Mo in the presence of mild oxidants, such as H₂O and CO₂, in the feed as well as by V doping. The results obtained allow us to draw a picture of the active catalyst surface and to propose a structure–activity correlation as a map for catalyst optimization.     

载体表面氧化程度对Ni/SiC甲烷化催化剂性能的影响

采用等体积浸渍法制备了Ni/SiC甲烷化催化剂, 研究了SiC载体表面氧化程度对催化剂低温活性和高温稳定性的影响, 并采用热重-差示扫描量热、N₂物理吸附、傅立叶变换红外光谱、氨程序升温脱附、X射线衍射、氢程序升温还原和氢化学吸附技术对样品进行了表征. 结果表明, 随着载体氧化温度的提高, 催化剂的比表面积和镍分散度降低, 但还原性和反应稳定性提高. 未氧化载体所负载催化剂的高温稳定性最差, 其原因在于载体对镍粒子的固定作用最弱. 负载于500和700℃处理的SiC载体上的催化剂具有较好的低温活性和高温稳定性, 这是因为适度氧化后的载体能较好地分散并固定镍粒子. 900℃处理的载体因过度氧化形成了低活性的氧化层, 使负载的镍粒子变大, 因而催化剂的低温活性最差.     

Precipitates originating from tungsten crucible parts in AlN bulk crystals grown by the PVT method

In order to evaluate the possible involvement of crucible materials in the growth of AlN bulk crystals grown by physical vapor transport, we applied growth conditions with a high vertical thermal gradient and hence high supersaturation of aluminum vapor. Under these conditions, precipitates formed causing diffuse grayish substructures at the initial growth interface and in the crystal body, decorating dislocations. Electron microscopy studies revealed that the precipitates are elongated, single‐phase particles with sizes of 50–500 nm of commensurate structure, oriented along the <110> direction. Chemical analysis of the precipitates showed tungsten as well as carbon and oxygen. The lattice parameters of the precipitates are in close agreement to hexagonal tungsten hemicarbide (W₂C). The possible transport from the tungsten parts and its conversion into tungsten hemicarbide precipitates is discussed. We thus conclude that the W₂C precipitates may contribute to the decoration of dislocations, even in growth with moderate thermal gradients.     

Site-specific electron-induced cross-linking of ortho-carborane to form semiconducting boron carbide

Semiconducting boron carbide (B₁₀C₂H_x) films have been formed by bombardment of condensed ortho-carborane (closo-1,2-dicarbadodecaborane) multilayers on polycrystalline copper substrates by 200 eV electrons under ultra-high vacuum conditions. The film formation process was characterized by X-ray and ultraviolet photoelectron spectroscopies. Electron bombardment results in the cross-linking of the icosahedral units. The cross-linking is accompanied by a shift in the B(1s) binding energy indicating site-specific cross-linking between two boron sites on adjacent carborane icosahedra. An additional shift in valence band binding energies attributed to the surface photovoltage effect is indicative of the formation of a p-type semiconductor. This is the first report of B₁₀C₂H_x formation by electron bombardment of condensed films, and the data indicate that this method is a viable route towards formation of ultra-thin films of tailored composition and cross-linkages for emerging nanoelectronics and sensor applications.     

Preparation of the Ni-P composite coating co-deposited by nano TiC particles and evaluation of it's corrosion property

In current research, low carbon steel plates were coated by Ni-P electroless method. The effect of adding different concentrations (ranging from 0.01 g/l to 0.5 g/l) of TiC nano-sized particles to the plating bath on deposition rate, surface morphology and corrosion behavior of Ni-P-TiC composite coatings were investigated. The surface morphology and the relevant structure were evaluated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Corrosion behavior of the coated steel was evaluated by electrochemical impedance spectroscopy (EIS) and polarization techniques. The results showed that addition of TiC nano-particles to Ni-P electroless bath not only changes the surface morphology of Ni-P coating, but also improves corrosion resistance of the steel in comparison with TiC free Ni-P electroless coating. In addition, the deposition rate of coating was also affected by incorporation of TiC particles. It was also found that improvement in corrosion resistance largely depends on the phosphorous and TiC concentrations on the coatings.     

快反系统中平面反射镜的轻量化设计

根据快速控制反射镜系统(快反系统)对平面反射镜的设计要求,对快反镜的轻量化结构进行了优化设计。选择比刚度大、热变形系数小的碳化硅为镜坯材料,采用背部开槽式结构减重,背部3点式支撑,对不同筋宽和镜面厚度等多种轻量化方案进行了有限元分析。结果表明:筋宽越大,镜体刚度越好,但筋宽增大到一定程度时,反射镜刚度的改善程度减缓;镜面越厚,镜体内应力、自重变形越大。结合反射镜设计要求和有限元分析结果,加工制备了筋宽为4 mm,镜面厚度为4 mm的碳化硅反射镜,镜体轻量化率达55%。实测反射镜的面形精度,其RMS值不超过λ/30,与分析结果相符,满足系统的使用要求。     

Electrochemical etching of silicon carbide

Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5 μm/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical valence of 6.3 ± 0.5 elementary charge per SiC molecule was determined. At p-n junctions (p-type layer on a n-type 6H-SiC substrate) a selective etching of the p-type epilayer could be achieved. For a planar 6H-4H polytype junction (n-type, both polytypes with equal doping concentrations) the 4H region was selectively etched under UV illumination. Thus polytype junctions could be marked by electrochemical etching. With HCl instead of HF no etching of SiC occurs, but a SiO₂ layer (thickness up to 8 μm) is formed by anodic oxidation. Received: 29 October 1998 / Accepted: 27 January 1999