非同类机极小化最大完工时间的保密排序问题

提出并研究了一类非同类机的极小化最大完工时间的保密排序问题Rm||Cmax.该问题的模型参数分为若干组,每个组都由一个不愿意共享或公开自己数据的单位所拥有.基于随机矩阵变换构造了一个不泄露私有数据且与原问题等价的安全规划模型,求解该安全模型可以获得问题的最优解,而且各单位的隐私数据仍然保持不被泄露.     

汽配件颜色喷涂顺序问题的TSP转化与建模

汽配件颜色喷涂顺序问题通常以生产线上相邻汽配件颜色切换次数少为最优目标,以进一步降低生产成本.该类问题具有所有汽配件都必须喷涂一次且只喷涂一次的特点,为此提出了TSP转化与建模的方法.将待喷涂汽配件定义为TSP顶点,任意两个待喷涂汽配件的颜色切换定义为顶点的距离,仿照TSP问题构建0-1规划模型;类似于顶点距离,将某些汽配件的颜色或类别不相邻要求定义为0-1矩阵,巧妙地构造了喷涂生产的约束条件.该建模方法简单快速,通用性高,适用于具有类似特点的各类生产实践问题.     

Insights into the efficient charge separation over Nb2O5/2D-C3N4 heterostructure for exceptional visible-light driven H2 evolution

Two-dimensional carbon nitride(2 D-C₃ N₄)nanosheets are promising materials in photocatalytic water splitting,but still suffer from easy agglomeration and fast photogene rated electron-hole pairs recombination.To tackle this issue,herein,a hierarchical Nb₂ O₅/2 D-C₃ N₄ heterostructure is precisely constructed and the built-in electric field between Nb₂O₅ and 2 D-C₃ N₄ can provide the driving force to separate/transfer the charge carriers efficiently.Moreover,the strongly Lewis acidic Nb₂O₅ can adsorb TEOA molecules on its surface at locally high concentrations to facilitate the oxidation reaction kinetics under irradiation,resulting in efficient photogene rated electrons-holes separation and exceptional photocatalytic hydrogen evolution.As expected,the champion Nb₂O₅/2 D-C₃N₄ heterostructure achieves an exceptional H2 evolution rate of 31.6 mmol g^-1 h^-1,which is 213.6 times and 4.3 times higher than that of pristine Nb₂O₅ and2 D-C₃N₄,respectively.Moreover,the champion heterostructure possesses a high apparent quantum efficiency(AQE)of 45.08%atλ=405 nm and superior cycling stability.Furthermore,a possible photocatalytic mechanism of the energy band alignment at the hetero-interface is proposed based on the systematical characterizations accompanied by density functional theory(DFT)calculations.This work paves the way for the precise construction of a high-quality heterostructured photocatalyst with efficient charge separation to boost hydrogen production.     

民航值机人员动态排班问题研究

由于机场地服人员的工作时间具有特殊性,人员需求量通常是由航班数量决定的,一天之中的航班量有高峰和低谷时段,因此不同时段的人员需求也不同.目前大多数机场的值机人员排班实行均衡小组排班制度,每个班次人数均衡,导致人员利用效率差.因此本文首先利用排队论对员工需求进行预测,基于均衡小组排班制度的弊端,提出了组内动态排班模型,并利用此模型进行实例验证,最后提出动态调整的措施.对比均衡小组排班和模型排班结果发现,组内动态排班不仅能够方便进行人员管理,而且提高了员工的工时有效率,减少了人力资源的浪费.     

纳米硅增强纳米纤维薄膜的制备与研究

利用纳米硅粉和聚乙烯吡咯烷酮(PVP)的乙醇混合溶液,通过静电纺丝和碳化制备了Si/C纳米纤维薄膜.通过XRD、SEM、XPS、拉伸测试和TG法对样品进行表征.结果表明,纤维直径、薄膜表面元素含量、碳化薄膜强度可以通过控制Si与PVP含量而调节;当Si与PVP的质量比为0.2时,碳化薄膜拉伸强度最高其值为(6.1±0.3)MPa,继续增加硅的含量其薄膜强度明显降低.     

Mg/Cd共掺杂ZnO电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势法,研究了Mg/Cd(不同的Cd浓度)共掺杂ZnO的电子结构和光学性质.研究表明:Mg/Cd共掺杂ZnO,体系的晶胞尺寸变大,但结构稳定.当Mg/Cd为1:1时,吸收边略微发生蓝移.随Cd的掺杂浓度增加,导带部分逐渐下移,禁带宽度变窄,出现红移现象.除此之外体系的吸收率和反射率也减小.说明Mg/Cd共掺杂ZnO,不仅使得体系光学谱丰富,而且透射性增强.这对实验中制备出高透射率的材料具有一定的指导意义.     

铟镓共掺杂对n-ZnO纳米棒/p-GaN异质结生长行为和光电性能的影响

利用低温水热法在p-GaN薄膜上生长了铟(In)和镓(Ga)共掺杂的ZnO纳米棒。X射线衍射(XRD)、X射线光电子能谱(XPS)和X射线能量色谱仪(EDS)结果表明,In和Ga已固溶到ZnO晶格中。扫描电子显微镜(SEM)结果表明, ZnO纳米棒具有良好的c轴取向性,随着In和Ga共掺杂浓度的增加,纳米棒的直径减小,密度增加。XRD结果表明,In和Ga共掺杂引起ZnO晶格常数增大,导致(002)衍射峰向低角度方向偏移。同时,ZnO的光学性质受到In和Ga共掺杂的影响。与纯ZnO相比, 共掺杂ZnO纳米棒的紫外发射峰都出现轻微红移,这是表面共振和带隙重整效应综合作用的结果。I-V特性曲线表明,随着In和Ga共掺杂浓度的增加,n-ZnO纳米棒/p-GaN异质结具有更好的导电性。     

Cu2O/TiO2-Bi2WO6三元复合催化剂的制备及光催化性能研究

采用水热法制备花状Bi2 WO6,并利用超声分散法制备了Cu2 O/TiO2-Bi2 WO6复合光催化剂,通过FESEM、XRD、XPS、FI-IR、UV-vis DRS和PL对光催化剂进行了分析和表征.表征结果证明:花状Bi2 WO6表面负载着碎片状的TiO2和立方体Cu2 O形成Cu2 O/TiO2-Bi2 WO6复合光催化剂;以短链脂肪酸(SCFAs)为牺牲剂,考察复合光催化剂的光催化产生氢气和烷烃的性能.实验结果表明:Cu2 O/TiO2-Bi2 WO6复合光催化剂以乙酸为牺牲剂,主要产氢气和甲烷,降解率高达91.82;;以丙酸为牺牲剂,产物主要是乙烷和丁烷,降解率高达90.70;;以丁酸为牺牲剂,除了氢气,甲烷,乙烷,丙烷,丁烷外,气体产物还含有一定量的戊烷,其降解率高达91.50;.结合反应液中间产物的成分进行检测,由此推断出光催化反应的可能机理.     

Lump and interaction solutions to the (3+1)-dimensional Burgers equation

The(3+1)-dimensional Burgers equation, which describes nonlinear waves in turbulence and the interface dynamics,is considered. Two types of semi-rational solutions, namely, the lump–kink solution and the lump–two kinks solution, are constructed from the quadratic function ansatz. Some interesting features of interactions between lumps and other solitons are revealed analytically and shown graphically, such as fusion and fission processes.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.