铟镓共掺杂对n-ZnO纳米棒/p-GaN异质结生长行为和光电性能的影响

利用低温水热法在p-GaN薄膜上生长了铟(In)和镓(Ga)共掺杂的ZnO纳米棒。X射线衍射(XRD)、X射线光电子能谱(XPS)和X射线能量色谱仪(EDS)结果表明,In和Ga已固溶到ZnO晶格中。扫描电子显微镜(SEM)结果表明, ZnO纳米棒具有良好的c轴取向性,随着In和Ga共掺杂浓度的增加,纳米棒的直径减小,密度增加。XRD结果表明,In和Ga共掺杂引起ZnO晶格常数增大,导致(002)衍射峰向低角度方向偏移。同时,ZnO的光学性质受到In和Ga共掺杂的影响。与纯ZnO相比, 共掺杂ZnO纳米棒的紫外发射峰都出现轻微红移,这是表面共振和带隙重整效应综合作用的结果。I-V特性曲线表明,随着In和Ga共掺杂浓度的增加,n-ZnO纳米棒/p-GaN异质结具有更好的导电性。

Effect of Indium and Gallium Co-Doping on Growth Behavior and Photoelectric Properties of n-ZnO Nanorods/p-GaN Heterojunction

ZnO nanorods co-doped with indium and gallium were grown on p-GaN films by low-temperature hydrothermal method. The results of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and energy dispersive spectroscopy (EDS) show that indium and gallium have been dissolved in the ZnO lattice. Scanning electron microscope (SEM) observation shows that ZnO nanorods have good c-axis orientation. With increasing indium and gallium co-doping concentration, the diameter of the nanorods decreases and the density increases. XRD results show that the incorporation of indium and gallium causes the lattice constant of ZnO to increase, resulting in the (002) diffraction peak shifting to a low angle direction. At the same time, the optical properties of ZnO are affected by the co-doping of In and Ga. The UV emission peaks of co-doped ZnO nanorods all show a slight red shift, which is the result of the combined effects of surface resonance and band gap reforming. The I-V characteristics curves show that the n-ZnO nanorods/p-GaN heterojunction has better conductivity with increasing indium and gallium co-doping concentration.