Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions

To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor(MOSFET) with a Schottky-drian(SD) and SD-connected semisuperjunctions(SDD-semi-SJ),named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional(2D) numerical simulations.The SD contacted with the n-pillar exhibits the Schottky-contact property,and that with the p-pillar the Ohmic-contact property.Based on these features,the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions(SJ) or semisuperjunctions(semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage(BV) and the specific on-resistance(R_(on)A).For a given pillar width and n-drift thickness,there exists a proper range of n-drift concentration(N),in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of R_(on)A-BV compared to the predication of SJ MOSFET in the forward applications.And what is much valuable,in this proper range of N,the desired BV and good trade-off could be achieved only by determining the pillar thickness,with the top assist layer thickness unchanged.Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of R_(on)A-BV improvement in SD-D-semi-SJ MOSFET.These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.     

N型槽栅金属-氧化物-半导体场效应晶体管抗热载流子效应的研究

用二维器件仿真软件MEDICI模拟分析了N型槽栅金属-氧化物-半导体场效应晶体管的热载流 子特性及其对器件性能所造成的损伤,并与相应常规平面器件进行了比较,同时用器件内部 物理量的分布对造成两种结构器件特性不同的原因进行了解释.结果表明槽栅器件对热载流 子效应有明显的抑制作用,但槽栅器件对热载流子损伤的反应较平面器件敏感. 关键词： 槽栅MOSFET 热载流子效应 界面态 特性退化     

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO2/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record low density of interface traps(~4×10¹⁰cm^-2·eV^-1@Ec-0.2 eV)is demonstrated on SiO2/SiC stack formed by microwave plasma oxidation.And high quality SiO2 with very flat interface(0.27-nm root-mean-square roughness)is obtained.High performance Si C metal–oxide–semiconductor field-effect transistors(MOSFETs)with peak field effect mobility of 44 cm^-2·eV^-1is realized without additional treatment.These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.     

Absorbing/emitting phonons with one dimensional MOSFETs

We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate phonons, when electron transport is due to phonon-assisted hops between localized states. Shifting the nanowire conduction band with a metallic gate induces different behaviors. When the Fermi potential is located near the band center, a bias voltage gives rise to small local heat exchanges which fluctuate randomly along the nanowire. When it is located near one of the band edges, the bias voltage yields heat currents which flow mainly from the substrate towards the nanowire near one boundary of the nanowire, and in the opposite direction near the other boundary. This opens interesting perspectives for heat management at submicron scales: arrays of parallel gated nanowires could be used for a field control of phonon emission/absorption.     

4H-SiC MOSFET的温度特性研究

对4HSiCMOSFET的器件结构和温度特性进行了研究,总结了器件的结构参数对特性的影响,比较了不同温度下的输出特性以及饱和漏电流、阈值电压、跨导、导通电阻与温度的变化关系,模拟结果表明4HSiCMOSFET具有优异的温度特性,在800K下可以正常工作 关键词： 4H-SiC MOSFET     

Organ point dose measurements in clinical multi slice computed tomography (MSCT) examinations with the MOSkin™ radiation dosimeter

This study reports on the application of the MOSkin™ dosimeter in MSCT imaging for the real-time measurement of absorbed organ point doses in a tissue-equivalent female anthropomorphic phantom. MOSkin™ dosimeters were placed within the phantom to measure absorbed point organ doses for 2 commonly applied clinical scan protocols, namely the renal calculus scan and the pulmonary embolus scan. Measured organ doses in the imaged field of view were found to be in the dose range 4.7–9.5 mGy and 16.2–27.4 mGy for the renal calculus scan and pulmonary scan protocols respectively. For the derivation of effective dose, using the more recent ICRP 103 tissue weighting factors (w_T) compared to that of the ICRP 60 w_T resulted in a difference in the derived effective dose by up to 0.8 mSv (−20%) in the renal calculus protocol and up to 1.8 mSv (18%) in the pulmonary embolus protocol. This difference is attributed to the reduced radiosensitivity of the gonads and the increased radiosensitivity of breast tissue in the latest ICRP 103 assigned w_T. The results of this study show that the MOSkin™ dosimeter is a useful real-time tool for the direct assessment of organ doses in clinical MSCT examinations.     

Effect of nitrogen doping on the properties of AlSiO film for wide bandgap semiconductors

A gate insulator film with a wide bandgap and a high dielectric constant is required to achieve high-power field effect transistors (FET) using wide bandgap semiconductors such as SiC, GaN, and diamond. It is observed that an aluminum silicon oxide (AlSiO) film containing 11% nitrogen has a high resistivity of 5 × 10¹⁵ Ω cm, and the leakage current of a nitrogen-doped aluminum silicon oxide (AlSiON) film is also suppressed at high temperature, as compared to the AlSiO film. For example, the leakage current at 240 °C is four orders of magnitude smaller than that of the AlSiO film, suggesting that the AlSiON film is applicable to high temperature operation of wide bandgap semiconductor devices.     

Exploring the effect of width on performance enhancement in NMOSFETs with a silicon-carbon alloy stressor and a tensile stress silicon nitride liner

The stress distribution in the Si channel regions of a SiC source/drain and stressed silicon nitride liner NMOSFETs with various widths were studied using 3D simulations. The mobility enhancement was found to be dominated by the tensile stress along the transport direction. Stress along the width direction was found to have the least effect on the drain current. The compressive stress along the vertical direction perpendicular to the gate oxide (S_zz) contributes significantly to the mobility enhancement and cannot be neglected in NMOSFETs with a width between 0.05 and 1 μm. The impact of width on performance improvements such as the drive current gain was also analyzed.     

Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs

An analytical model for subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs is presented in this paper. Both the drift and diffusion components of current densities are considered for the modeling of subthreshold current. Virtual cathode concept of DG MOSFETs is utilized to model the subthreshold swing of TM-DG MOSFETs. The effect of different length ratios of the three channel regions under three different gate materials of device on the subthreshold current and subthreshold swing of the short-channel TM-DG MOSFETs have been discussed. The dependencies of subthreshold current and subthreshold swing on various device parameters have been studied. The simulation data obtained by using the commercially available 2D device simulation software ATLAS™ has been used to validate the present model.