Effect of nitrogen doping on the properties of AlSiO film for wide bandgap semiconductors |
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Authors: | Naoyoshi Komatsu Hirotaka Tanaka Keiko Masumoto Chiharu Kimura Takashi Sugino |
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Institution: | a Department of Electrical, Electronics and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan b Maizuru National College of Technology, Maizuru, Kyoto, Japan |
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Abstract: | A gate insulator film with a wide bandgap and a high dielectric constant is required to achieve high-power field effect transistors (FET) using wide bandgap semiconductors such as SiC, GaN, and diamond. It is observed that an aluminum silicon oxide (AlSiO) film containing 11% nitrogen has a high resistivity of 5 × 1015 Ω cm, and the leakage current of a nitrogen-doped aluminum silicon oxide (AlSiON) film is also suppressed at high temperature, as compared to the AlSiO film. For example, the leakage current at 240 °C is four orders of magnitude smaller than that of the AlSiO film, suggesting that the AlSiON film is applicable to high temperature operation of wide bandgap semiconductor devices. |
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Keywords: | AlSiO Nitrogen doping Wide bandgap and high temperature power device High-k dielectrics MOSFET |
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