磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

Computer simulation of back sputtering and ion penetration into polycrystalline targets

Pramana - In the present work computer simultations of the back sputtering of low energy neon ions with low impact parameter and the penetration of the same for higher values of the impact...     

不锈钢管道低温溅射镀TiN薄膜技术

 设计了一套适用于加速器细长管道真空室的低温溅射镀TiN薄膜装置。利用该装置，对86 mm×2 000 mm的不锈钢管道真空室进行溅射镀TiN膜实验，并对镀膜实验结果进行分析，得到了适用于加速器管道真空室内壁溅射镀TiN膜的表面处理参数。样品测试结果表明：在压强为80～90 Pa、基体温度为160~180 ℃的镀膜参数下，不锈钢管道内壁获得的TiN薄膜最佳，薄膜沉积速率为0.145 nm/s。镀膜后真空室的二次电子产额明显降低。     

原位氧化Zn3N2制备P型ZnO薄膜的性能研究

采用射频反应溅射法在玻璃衬底上制备Zn3N2薄膜,然后向真空室中通入纯氧气进行热氧化制备ZnO薄膜.利用X射线衍射、扫描电子显微镜、霍尔效应测量、透射光谱和光致发光光谱等表征技术,研究了氧化温度和氧化时间对ZnO薄膜的结晶质量、电学性质和光学性能的影响.研究结果显示,450℃下氧化2h后的样品中除含有ZnO外,还有Zn3N2成分,500℃下氧化2h可以制备出电阻率为0.7Ωcm,空穴载流子浓度为1017cm-3,空穴迁移率为0.9cm2/Vs的具有c轴择优取向的p型ZnO薄膜.此时的ZnO薄膜具有良好的光学特性,紫外可见光范围内透过率为85%,处于紫外区域的激子复合产生的发光峰很强,且半高宽较窄,而处于可见光部分来自于深能级发射的绿色发光峰很弱.这种工艺制备的ZnO薄膜质量较好,有利于实现在短波长光电器件方面的应用.     

Structural and optical characterization of DC magnetron sputtered molybdenum oxide films

Thin films of molybdenum trioxide were deposited on glass substrates employing direct current (DC) magnetron sputtering by sputtering of molybdenum at different oxygen partial pressures in the range 8 × 10⁻⁵–1 × 10⁻³ mbar and at a substrate temperature of 473 K. The glow discharge characteristics of magnetron cathode target of molybdenum were studied. The influence of oxygen partial pressure on the structural and optical properties of molybdenum trioxide films was investigated. The films formed at an optimum oxygen partial pressure of 2 × 10⁻⁴ mbar were polycrystalline in nature with orthorhombic α- phase and an optical band gap of 3.16 eV. The refractive index of the films formed at an oxygen partial pressure of 2 × 10⁻⁴ mbar decreased from 2.08 to 1.89 with increase of wavelength from 450 to 1,000 nm, respectively. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.     

The role of oxygen and hydrogen partial pressures on structural and optical properties of ITO films deposited by reactive rf-magnetron sputtering

Sn doped In₂O₃ films are deposited by rf-magnetron sputtering at 300 °C under Ar, Ar + O₂ and Ar + H₂ gas ambients. For the film prepared under argon ambient, electrical resistivity 6.5 × 10⁻⁴ Ω cm and 95% optical transmission in the visible region have been achieved optimizing the power and chamber pressure during the film deposition. X-ray diffraction spectra of the ITO film reveal (2 2 2) and (4 0 0) crystallographic planes of In₂O₃. With the introduction of 1.33% oxygen in argon, (2 2 2) peak of In₂O₃ decreases and resistivity increases for the deposited film. With further increase of oxygen in the sputtering gas mixture crystallinity in the film deteriorates and both the peaks disappeared. On the other hand, when 1.33% hydrogen is mixed with argon, the resistivity of the deposited film decreases to 5.5 × 10⁻⁴ Ω cm and the crystallinity remains almost unchanged. In case of reactive sputtering, the deposition rate is lower compared to that in case of non-reactive sputtering. HRTEM and first Fourier patterns show the highly crystalline structure of the samples deposited under Ar and Ar + H₂ ambients. Crystallinity of the film becomes lower with the introduction of oxygen in argon but refractive index increases from 1.86 to 1.9. The surface morphology of the ITO films have been studied by high resolution scanning electron microscopy.     

Crystallization and electrical properties of V2O5 thin films prepared by RF sputtering

V₂O₅ thin films were prepared under various conditions by using reactive RF sputtering technique. The microstructure and electrical properties of the films are have been investigated. X-ray diffraction data revealed the films deposited at low O₂/Ar ratio are amorphous. The orthorhombic structure of film improved after post annealing at 873 K. The microstructure parameters (crystallite/domain size and macrostrain) have been evaluated by using a single order Voigt profile method. Using the two-point probe technique, the dark conductivity as a function of the condition parameters such as film thickness, oxygen content and temperature are discussed. It was also found that, the behaviour of ρd versus d was found to fit properly with the Fuchs-Sondheimer relation with the parameters: ρ_o = 2.14 × 10⁷ Ω cm and ?_o = 112 ± 2 nm. At high temperature, the electrical conductivity is dominated by grain boundaries, the values of activation energy and potential barrier height were 0.90 ± 0.02 eV and 0.92 ± 0.02 V, respectively.     

Epitaxial LSMO films grown on MgO single crystalline substrates

The manganite La_0.67Sr_0.33MnO₃ (LSMO) layers are deposited on single crystal MgO(0 0 1) substrates using a magnetron dc sputtering. The crystalline perfection of the layers, both the as-prepared and the annealed, are characterized by X-ray diffraction technique, rocking curve measurements, Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). TEM analyses give evidence of the epitaxial growth of the annealed LSMO with a nanocrystalline surface layer. The temperature dependence of resistance in the 77-340 K range is measured by a standard four-probe technique. While the as-prepared film does not show any transition from paramagnetic to ferromagnetic state, the film annealed in oxygen shows steep R(T) dependence with a peak at 330 K and maximal slope (dR/dT) at 290 K where the maximal sensitivity is 3% K⁻¹.     

Structure evolution and mechanical properties enhancement of Al/AlN multilayer

A set of Al/AlN multilayers with various modulation periods were prepared using DC magnetron sputtering method. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the films was investigated with grazing angle X-ray diffraction (GAXRD). LAXRD results indicate that well-defined multilayer modulation structures are formed for the relatively larger modulation periods. However, the loss of mutilayered structure is detected in the multilayer with low modulation period. A very wide amorphous peak is observed in multilayer with modulation period of 4 nm. The multilayers show obvious crystallization at larger modulation periods, however, the diffraction peaks are much wider than the Al single layer because of the interruption of the continuous columnar grain growth by alternating deposition processes. Nanoindentation experiments were performed to study the mechanical properties as a function of multilayer modulation period. It is found that the hardness of the multilayers is greater than the hardness calculated from rule of mixtures. With the modulation periods adjusted, the multilayers are even harder than its hard component (AlN). A maximum hardness of 24.9 GPa, about 1.9 times larger than its hard component (AlN) and 3.7 times larger than the hardness calculated from the rule of mixtures, is found at the multilayer with modulation period of 16 nm. The wear test results show that the multilayers possess lower and stable friction coefficient, and superior wear properties.