倾斜Bragg光纤光栅反射谱特性理论和实验研究

光纤Bragg光栅在通信和传感领域有着广泛的应用。根据倾斜光纤Bragg光栅的结构特点，利用耦合模原理，运用传输矩阵法，模拟分析了倾斜角度对光纤Bragg光栅反射特性的影响，并用实验对模拟结果进行了验证。实验和模拟结果表明：随着倾斜角的增大，中心反射波长向长波方向移动，反射带宽变窄，反射率减小。这个结论对倾斜Bragg光纤光栅的生产和应用有一定的指导作用。     

用超磁致伸缩调谐光纤光栅的光分/插复用器

提出并研究了一种新型多信道切换的全光分/插复用器,它主要由光纤Bragg光栅(FBG)和一对光环行器组成.采用了一种高效的超磁致伸缩材料(GMM)使FBG产生有效的Bragg波长偏移.用控制电流来调控FBG的应变和Bragg波长偏移.用4只相同的FBG与波长叠加技术相结合,可建立能提供15种不同下路信道方式的OADM.     

Structural characterisation of Sb-based heterostructures by X-ray scattering methods

Antimonide-based superlattices dedicated to the elaboration of opto-electronic devices have been studied by X-ray scattering techniques. In particular, specular and non-specular X-ray reflectometry experiments have been performed on two MBE-samples elaborated with different shutter sequences at the interfaces. The results have shown a limitation of the incorporation of Sb species in the subsequent InAs layer for one of the samples, as expected.Then, a study on a InGaAs-cap layer/(InGaAs/AlAsSb)_N superlattice grown on a InGaAs/InP buffer layer by both specular X-ray reflectometry and High resolution X-ray diffraction is reported. In particular, the results have revealed the presence of a highly disturbed thin-layer on top of the MOVPE-made GaInAs, whose presence has been explained by In-concentration modification during the desoxidation procedure at the surface of the MOVPE-made GaInAs.Beside the results on the Sb-based heterostructures, the use of X-ray scattering metrology as a routinely working non-destructive testing method has been emphasized.     

运用严格耦合波理论计算平面电介质光栅的衍射效率

本文阐述了严格耦合波理论的基本思想。针对横电波的情况，详细分析了运用严格耦合波理论实现光栅衍射效率计算的方法，并且进一步给出了编制计算衍射效率程序的步骤。通过一个具体计算实例表明：各衍射级分布的光能量之和等于入射光的能量，满足能量守恒定律，从而证实了计算结果的正确性。     

分布耦合系数对线性啁啾光栅色散的影响

本文从光栅反向耦合波方程出发,经相位共轭变换用Runge-Kuta-Gil方法对其数值求解。针对线性啁啾光栅耦合系数变化服从不同的分布,分析了各种分布对光栅反射谱特性和色散特性的影响。     

微型圆光栅刻划偏心量的控制

对微型圆光栅刻划偏心误差问题进行了讨论。提出了微型圆光栅刻划时偏心调试误差的公差范围。     

红外镜反射光谱的测试与解析

红外镜反射（infrared specular reflection，简称SR）光谱与被测样品和衬底的折射指数、吸收指数以及入射角有密切关系，往往由之产生畸变。要从红外镜反射技术测得的光谱处理得到人们熟悉的吸收光谱，需要经过较复杂的计算机数学处理。本文通过几个比较特殊的镜反射例子，以说明镜反射光谱的测试和解析必须注意多种影响因素。     

XPS,AFM, ATR and TPD evidence for terraced,dihydrogen terminated, 1×1 (100) silicon

Heating (100) silicon at high temperature (say, higher than 850 °C) in H₂, cooling to 670–700 °C in the same ambient, and quenching to room temperature in N₂ results in environmentally robust, terraced 1 × 1 (100) SiH₂. Evidence for this conclusion is based on angle‐resolved x‐ray photoelectron spectroscopy, atomic force microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, thermal programmed desorption, and reflection high‐energy electron diffraction. Copyright © 2005 John Wiley & Sons, Ltd.     

Enhancement of electronic excitation energy transfer in the colloidal crystals of colloidal silica suspensions doped with fluorescent dyes

The efficiency of electronic excitation energy transfer from photo-excited rhodamine 110 (Rh110, energy donor) to rhodamine B (RhB, energy acceptor) in an exhaustively deionized colloidal silica suspension has been studied. This colloidal suspension shows Bragg reflection due to the formation of colloidal crystals and the Bragg-peak wavelength is controllable by the volume fraction of the silica spheres. When the Bragg-peak wavelength matches with the fluorescence band of Rh110, a depletion was observed in the Rh110 fluorescence spectrum. This means the fluorescence of Rh110 is partially trapped due to the Bragg reflection inside the crystal lattice. In the coexistence of RhB, the enhancement of RhB fluorescence intensity was observed. These facts clearly indicate the trapped photon energy of Rh110 is efficiently transferred to RhB within the colloidal crystals. The quantitative measurements showed that the enhancement of the transfer efficiency is 20% (or slightly more) in the present experimental conditions.     

Quantitative surface analysis by Auger and x-ray photoelectron spectroscopy

Recent developments in quantitative surface analysis by Auger (AES) and x-ray photoelectron (XPS) spectroscopies are reviewed and problems relating to a more accurate quantitative interpretation of AES/XPS experimental data are discussed. Special attention is paid to consideration of elementary physical processes involved and influence of multiple scattering effects on signal line intensities. In particular, the major features of core-shell ionization by electron impact, Auger transitions and photoionization are considered qualitatively and rigorous approaches used to calculate the respective transition probabilities are analysed. It is shown that, in amorphous and polycrystalline targets, incoherent scattering of primary and signal Auger and photoelectrons can be described by solving analytically a kinetic equation with appropriate boundary conditions. The analytical results for the angular and energy distribution, the mean escape depth, and the escape probability as a function of depth of origin of signal electrons as well as that for the backscattering factor in AES are in good agreement with the corresponding Mote Carlo simulation data. Methods for inelastic background subtraction, surface composition determination and depth-profile reconstructions by angle-resolved AES/XPS are discussed. Examples of novel techniques based on x-ray induced photoemission are considered.