双折射吸收非线性介质薄膜中倍频的产生

从二次谐波电场满足的波动方程出发，考虑到介质对二次谐波的吸收以及把完全边界条件应用于基频波和二次谐波在介质的入射面和出射面之间的反射效应，推导出了单光轴非线性薄膜介质中的二次谐波输出功率的计算式.结果表明：当采用复折射率的概念时，可以把非线性无吸收介质的二次谐波输出功率计算式应用到非线性吸收介质二次谐波输出功率计算式中去.     

Short Tm3+-doped fiber lasers with watt-level output near 2 μm

High-power operation of diode-pumped fiber lasers at wavelength near 2μm are demonstrated with short length of heavily Tm3 -doped silica glass fibers. With 7-cm long fiber, a laser at near 2 μm is obtained with the threshold of 135 mW, maximum output power of 1.09 W, and slope efficiency of 9.6% with respect to the launched power from a laser diode at 790 nm. The output stability of this fiber laser is within 5%.The dependence of the performance of fiber lasers on the operation temperature and cavity configuration parameters is also investigated.     

Growth and characterization of InAs quantum dots with low-density and long emission wavelength

The growth parameters affecting the deposition of self-assembled InAs quantum dots （QDs） on GaAs substrate by low-pressure metal-organic chemical vapor deposition （MOCVD） are reported. The low-density InAs QDs （- 5 × 10^8cm^-2） are achieved using high growth temperature and low InAs coverage. Photoluminescence （PL） measurements show the good optical quality of low-density QDs. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1361 nm and 23 meV （35 nm）, respectively, which are obtained as the GaAs capping layer grown using triethylgallium （TEG） and tertiallybutylarsine （TBA）. The PL spectra exhibit three emission peaks at 1361, 1280, and 1204 nm, which correspond to the ground state, the first excited state, and the second excited state of the ODs, respectively.     

铋镓共掺的高浓度掺铒石英基光纤中铒离子团簇率的实验研究

使用MCVD法结合溶液掺杂技术制作了铒铋镓共掺的石英基光纤.根据光纤吸收谱，得出其中铒离子浓度是5.24×10²⁵/m³.然后提出了一种新的利用透射率测定掺铒光纤的团簇率的实验方法，该方法相比于以前的方法更简单有效.利用该方法，测得了自制铒铋镓共掺光纤中团簇率.通过与前人的结果相比较，充分说明铋和镓的掺入大大提高了铒离子在石英基光纤中的溶解度，抑制了铒离子形成团簇.     

强磁场条件下Mn-Sb梯度复合材料的制备

研究了Mn-898wt%Sb合金在无磁场以及磁场为B=88 T、不同强度的磁场梯度作用下的凝固组织变化，并分析了上述不同强磁场条件对合金凝固组织影响的作用机理.研究表明，在较大梯度磁场作用时，试样中出现了初生MnSb相与Sb相以及共晶组织共存的现象，而且初生MnSb相与Sb相产生了明显的分层现象.此外，磁场梯度作用下初生MnSb相和Sb相的含量随着磁场梯度的增大而增加.论文对初生MnSb相和Sb相的分离机理进行了探讨，发现在梯度磁场作用下，熔融金属中不同磁化率的合金组元团簇受力不同，造成     

高纯锗中浅受主的光热电离光谱

在液氦温度附近, 运用傅里叶变换光谱以及与之相连的磁光光谱系统, 对室温电阻率约为50Ω·cm的p型高纯锗样品进行了高灵敏度的光热电离光谱的研究.从实验上确定了高纯锗样品中浅杂质光热电离的最佳温度范围, 在该温度范围内测量了样品的光热电离光谱, 指出该样品中主要杂质为浅受主硼与铝. 对杂质谱线发生分裂的两种原因, 补偿性杂质导致的快速复合以及随机应力等, 进行了分析讨论.     

掺锗硅基高非线性光纤超连续光源研究

利用非线性偏振旋转锁模掺铒光纤激光器和1100m长的掺锗硅基高非线性光纤制作了超连续光源，获得了从1150～1750nm的超宽带输出光谱，其中1150～1350nm波段光谱起伏小于3dB，1600～1700nm波段平坦度优于1dB，并有很好的向长波延展空间。光谱展宽的机理为孤子分裂与受激拉曼散射，而四波混频使光谱进一步展宽。     

Study on hydrogen sulfide plasma passivation of 790-nm laser diode cavity surface

In order to improve the optical properties of the Ⅲ-Ⅴ laser diodes(LDs) by means of H2S plasma passivation technology,H2S plasma passivation treatment is performed on the GaAs(110) surface.The optimum passivation conditions obtained are 60-W radio frequency(RF)power and 20-min duration.So the laser cavity surfaces axe treated under the optimum passivation conditions.Consequently,compared with unpassivated lasers with only AR/HR-coatings,the catastrophic optical damage (COD) threshold value of the passivated lasers by H2S plasma treatment is increased by 33%,which is almost the same as that of (NH4)2Sx treatment.And the life-test experiment has demonstrated that this passivation method is more stable than(NH4)2Sx solution wet-passivated treatment.     

Kinetic modeling of a high power fast-axial-flow CO2 laser with computational fluid dynamics method

A new computational fluid dynamics (CFD) method for the simulation of fast-axial-flow CO2 laser is developed.The model which is solved by CFD software uses a set of dynamic differential equations to describe the dynamic process in one discharge tube.The velocity,temperature,pressure and turbulence energy distributions in discharge passage are presented.There is a good agreement between the theoretical prediction and the experimental results.This result indicates that the parameters of the laser have significant effect on the flow distribution in the discharge passage.It is helpful to optimize the output of high power CO2 laser by mastering its kinetic characteristics.     

Optical waveguides in LiNbO<Subscript>3</Subscript> and stoichiometric LiNbO<Subscript>3</Subscript> crystals by proton exchange

The formation of optical planar waveguides in LiNbO₃ and stoichiometric LiNbO₃ crystals by proton exchange was reported. The prism-coupling method was used to characterize the dark-line spectroscopy at the wavelength of 633 and 1539 nm, respectively. The mode optical near-field outputs from proton-exchanged LiNbO₃ and SLN waveguides at 633 nm were presented. The mode field from stoichiometric LiNbO₃ (SLN) waveguide is lighter and more uniform than that from LiNbO₃ waveguide, which means the quality of the waveguide in SLN crystal is better than that of the LiNbO₃ waveguide. For proton-exchanged LiNbO₃ waveguides, the evolution of the refractive index profile with annealing was presented. The disorder profiles of Nb atoms in proton-exchanged LiNbO₃ waveguides were obtained by Rutherford backscattering/channeling technique. It is shown that the longer the exchange time, the larger the displacement of Nb atoms. Supported by the National Natural Science Foundation of China (Grant No. 10475052) and the Scientific Research Start-up Financing of Qufu Normal University