超相对论强度激光与薄膜靶作用中0.4 nm以下X射线阿秒脉冲的产生

用一维粒子模拟程序对功率密度在10²² W/cm²以上的超强激光驱动薄膜靶产生的相对论电子层及其经过汤姆孙散射产生的阿秒X射线进行了研究. 结果表明, 在超相对论强度范围下增大驱动激光强度, 相应减小等离子体密度及厚度可使电子层获得更高纵向动量, 使汤姆孙散射光明显向更短波长移动. 优化相关参数得到了波长为 1.168 nm的阿秒脉冲. 经过对倍频探测光方案与驱动光以及薄膜靶参数进行综合考虑和优化, 得到的X射线相干辐射波长有效减小到0.4 nm以下, 产生的光子能量达到2 keV以上. 关键词： 超相对论强度激光 阿秒X射线 相对论电子层 汤姆孙后向散射     

基于VXI总线的电离层探测系统信号源的设计

根据新型电离层斜向返回探测系统的编码调相脉冲压缩、间隔收发体制，采用FPGA和数字上变频器实现了一种适合该体制的、基于VXI总线的信号源模块．具体描述了该模块的设计方法、主要逻辑和时序关系，试验表明，该模块运行可靠，工作方式和参数调整灵活，实现了符合体制要求的射频信号和时序控制信号，满足了新型电离层斜向返回探测系统抗干扰、开放性和易升级的要求。     

The first-order perturbed SBS equations

Summary Using standard multiscale techniques, a first-order perturbation theory for SBS is developed. In the presence of small damping, we find that there is a stationary solution for a soliton which is a fixed point. The velocity of this soliton is determined by the damping coefficients. In addition, there is also a constant shift in the pump intensity in the region between the front of the backward moving soliton and the forward light cone of the pump.     

非相干光作用下的Ce：BaTiO3自泵浦相位共轭镜特性

地Ｃｅ：ＢａＴｉＯ３晶体的自泵浦相位共竟然非相干光作用下自泵浦相位共轭反射率增强的特性进行了研究。实验是在Ｈｅ－Ｎｅ激光产生稳态自泵浦相位共轭输出后，用非相干光平行ｃ轴照射来获得这一增强特性的，当水平移动非相干光入射位置，发现有两个区域非相干光作用能使相位共轭反射率增加，本文对此进行了相应的分析和讨论。     

Growth of Ni-Al alloys on Ni(1 1 1): (I) Formation of epitaxial Ni3Al from ultra-thin Al deposits

In this paper we describe the alloying process of ultra-thin Al layers (below 8 × 10¹⁵ Al/cm²) deposited on Ni(1 1 1). For this purpose Auger electron spectroscopy, low energy electron diffraction, and ion beam analysis-channelling measurements have been performed in situ in an ultra-high vacuum chamber. Al deposits formed at low temperature (about 130 K) are strained defective crystalline layers retaining the substrate orientation. Alloying takes place, with very progressive Ni enrichment, in a very broad temperature range between 250 K and 570 K. This feature shows that diffusion of the alloy species is more and more difficult when the Ni concentration increases. At 570 K a crystallographically and chemically ordered Ni₃Al phase is formed, and its order continuously improves upon annealing, up to 750 K. We have shown by ion beam methods that this alloy is three-dimensional, extending up to 16 (1 1 1) planes for the thickest deposits. The Ni₃Al phase can also be obtained directly by Al deposition at 750 K, but its crystalline quality is lower and the layer is probably formed of grains elongated along 〈1 1 −2〉 directions. The Al content of the thin Ni₃Al layers formed mostly dissolves in the bulk above 800 K. However a small amount of Al remains segregated at the Ni crystal surface.     

Determination of photoelectron attenuation lengths in calcium phosphate ceramic films using XPS and RBS

Calcium phosphate (CaP) coatings are used to improve the biological performance of an implant. A technique that is often used to measure the composition of this material is XPS. When extremely thin coatings are measured, for example to study the interface between CaP and a substrate, the quantification of the XPS results is complicated by the varying attenuation lengths (ALs) of the photoelectrons at different energies. To correct for this, AL data are needed. In this work we measured these ALs by comparing XPS yields with the coating coverage (as measured by Rutherford backscattering spectrometry). We were able to determine the AL for several calcium and phosphorus peaks. Determination of the oxygen ALs was not possible owing to diffusion of oxygen into the polymeric substrates. For the peaks that are most often used for quantification of XPS yields (the Ca 2p and the P 2p peak), we found ALs of 21.8 × 10¹⁵ atoms cm^?2 and 26.8 × 10¹⁵ atoms cm^?2, respectively. Concentration profiles near the interface, growth mode and interfacial roughness appeared to have no measurable effect on the measured ALs. For the ALs, an energy dependence with an exponent of 0.55 was found. The measured ALs are best predicted by the empirical CS1 equation of Cumpson and Seah. Copyright © 2003 John Wiley & Sons, Ltd.     

InxGa1-xN薄膜的弯曲因子及斯托克斯移动研究

采用常压金属有机化学汽相沉积(MOCVD)技术以Al2O3为衬底在GaN膜上生长了InxGa1-xN薄膜。以卢瑟福背散射／沟道技术、光透射谱、光致发光光谱对InxGa1-xN／GaN／AI2O3样品进行了测试。研究了InxGa1-xN薄膜的弯曲因子及斯托克斯移动。结果表明，采用光透射谱、光致发光光谱得到的InxGa1-xN薄膜的禁带宽度一致，InxGa1-xN薄膜并不存在斯托克斯移动。InxGa1-xN薄膜的In组分分别为0．04，0．06，0．24，0．26时，其弯曲因子分别为3．40,2．36，1．82，3．70。随In组分变化。InxGa1-xN薄膜的弯曲因子的变化并没有一定的规律，表明InxGa1-xN薄膜的禁带宽度随In组分的变化关系复杂。     

Improvements in Carrier-to-Noise-Ratio (CNR) of Lightwave Amplitude Modulated Vestigial-Sideband (AM-VSB) Transmission Systems by the Use of Optical Isolators

In lightwave community antena television (CATV) systems as well as other optical fiber communication networks, a transmitted optical signal is known to be degraded by an intensity noise produced within the fiber due to the interference between the signal and doubly reflected light. We report on the improvements to the signal degradation due to the double Rayleigh backscattering by inserting optical isolators in the trunk lines of the systems. A carrier-to-noise ratio (CNR) has been calculated as a function of the number and the insertion loss of the isolators. The calculated results indicate that there is an optimum number of isolators, and if the insertion loss is less than 0.3 dB, the CNR degradation can be restored by more than 60%. To test the calculated results, we conducted experiments for the specific case of employing one isolator, and obtained good agreements between the two.     

Recent progress in quantitative and high spatial resolution AES

Progress in high resolution Auger electron spectroscopy (HR-AES or scanning Auger microscopy, SAM) during the past few years is characterized by the use of efficient field emission electron sources, parallel detection capabilities and improved data acquisition, storage and processing, thus enhancing spatial resolution (to about 10 nm), signal to noise figure and quantification of elements in different chemical bonding states, e.g. by routinely using factor analysis. Optimized ion sputtering facilities, particularly sample rotation, enable depth profiling with high, depth independent resolution. The basic features of SAM are discussed with respect to EPMA (electron probe micro-analysis), emphasizing fundamental limitations and future developments.     

Study of depth-dependent tetragonal distortion of quaternary AIInGaN epilayer by Rutherford backscattering/channeling

<正>A 240-nm thick Al_0.4In_0.02Ga_0.58N layer is grown by metal organic chemical vapour deposition,with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire（0001）.Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN.The results show a good crystalline quality of AlInGaN(x_min= 1.5%) with GaN buffer layer.The channeling angular scan around an off-normal（1213） axis in the {1010} plane of the AlInGaN layer is used to determine tetragonal distortion e_T,which is caused by the elastic strain in the AlInGaN.The resulting AlInGaN is subjected to an elastic strain at interfacial layer,and the strain decreases gradually towards the near-surface layer.It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed （e_T=0）.