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Study of depth-dependent tetragonal distortion of quaternary AIInGaN epilayer by Rutherford backscattering/channeling
Authors:G Husnain  Chen Tian-Xian  Fa Tao  Yao Shu-De
Affiliation:State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China
Abstract:Ⅲ-Ⅴ semiconductors, Rutherford backscattering and channeling, tetragonal distortion
Keywords:Ⅲ-Ⅴ semiconductors  Rutherford backscattering and channeling  tetragonal distortion
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