The influence of pulse duration on the stress levels in ablation of ceramics: A finite element study

We present a finite element model to investigate the dynamic thermal and mechanical response of ceramic materials to pulsed infrared radiation. The model was applied to the specific problem of determining the influence of the pulse duration on the stress levels reached in human dental enamel irradiated by a CO₂ laser at 10.6 μm with pulse durations between 0.1 and 100 μs and sub-ablative fluence. Our results indicate that short pulses with durations much larger than the characteristic acoustic relaxation time of the material can still cause high stress transients at the irradiated site, and indicate that pulse durations of the order of 10 μs may be more adequate both for enamel surface modification and for ablation than pulse durations up to 1 μs. The model presented here can easily be modified to investigate the dynamic response of ceramic materials to mid-infrared radiation and help determine optimal pulse durations for specific procedures.     

锐钛矿二氧化钛超细纳米晶的三声子互作用

本文通过对粒径为2.2-25.5nm的锐钛矿二氧化钛超细纳米晶在83-293 K温度范围内的变温拉曼光谱的研究,得到了三声子互作用对拉曼频率和线宽的贡献随粒径的变化关系。结果表明锐钛矿二氧化钛超细纳米晶的三声子相互作用随粒径减小而加强。     

光码分多址系统中光学相关接收机判决阈值的分析

介绍了光码分多址系统中常用地址码（一维扩时码、二维码和三维码）的特点，并对它们各自的互相关均值和方差进行了理论分析。基于非相干光码分多址系统中光学相关接收机的基本原理，结合不同的用户地址码，对系统误码率性能进行了分析，得到了接收机最佳判决阈值与地址码基本特性参数和系统同时用户数间的关系。最后，给出了数值仿真结果。结果表明，对于采用特定地址码的光码分多址系统，只有选择合适的接收机判决阈值，系统的误码率性能才能达到最佳。研究结果对光码分多址系统中接收机判决阈值的选取具有一定的参考作用。     

非傍轴平顶高斯光束M2因子两种定义的比较研究

基于功率密度的二阶矩方法，推导出了非傍轴平顶高斯(FG)光束束宽和远场发散角的解析表达式.研究表明，当w0/λ→0时，远场发散角趋于渐近值θmax=63.435°，与阶数无关.使用非傍轴高斯光束代替傍轴高斯光束作为理想光束，研究了非傍轴FG光束的M2因子，并与传统定义的M2因子作了比较.在非傍轴范畴，非傍轴FG光束的M2因子不仅与阶数N有关，而且与w0/λ有关.按照定义，当w0/λ→0时，非傍轴FG光束的M2因子不等于0，对阶数N=1, 2, 3时，M2因子分别趋于0.913,0.882和0.886.当N→∞时，M2因子取最小值M2min=0.816.     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

基于旋转描述的三维几何造型方法

提出了一种能用凸四边形表示并可作平面展开的三维实体造型的设计方法。该方法用旋转描述表把二维平面展开图和三维实体联系起来，模拟人工折叠过程，由二维平面展开图逐次旋转变换完成三维造型重建。造型重建后，再通过纹理映射将平面设计图案映射到实体的各个面上，完成对实体着色渲染，生成具有真实感的三维实体。     

弱(L_1,L_2)-BLD映射的正则性

本文首先将文［１］中的ＢＬＤ映射推广为弱（Ｌ１，Ｌ２）－ＢＬＤ映射，并证明了如下正则性结果：存在两个可积指数 Ｐ１＝Ｐ１（ｎ，Ｌ１，Ｌ２）＜ｎ＜ｑ１＝ｑ１（ｎ，Ｌ１，Ｌ２），使得对任意弱（Ｌ１，Ｌ２）－ＢＬＤ映射ｆ∈（Ω，Ｒｎ），都有ｆ∈（Ω，Ｒｎ），即ｆ为（Ｌ１，Ｌ２）－ＢＬＤ映射．     

Chemical bonding in isolated molecules and crystals of zwitterionic pentacoordinate silicon chelates

The electronic structures of a number of zwitterionic pentacoordinate silicon chelates were investigated using the results of X-ray diffraction studies and quantum-chemical calculatoins by the MPW1PW91/6-311G(d) method. The topological analysis of the electron density distribution function and the study in the framework of the natural bond orbital partitioning scheme showed that the character of chemical bonding in the axial fragments of the molecules under consideration changes from dative to three-center, four-electron as the silicon atom assumes a trigonal-bipyramidal coordination.     

基于同步辐射加速器的康普顿背散射γ射线源(Ⅰ)产生MeV量级γ光子的数值计算

提出在筹建的上海同步辐射装置上建造一条MeV量级γ射线束及应用站,采用μm波长的红外(或远红外)激光与储存环中3.5GeV电子束进行康普顿背散射,从而获得能区为1—25MeV的康普顿背散射γ光子束,该光子束具有高强度、高极化度(线和圆极化)、准单色、方向性好的优点,可以广泛地应用于核物理和核天体物理基础研究及相关的应用研究领域.介绍了康普顿背散射的基本原理,并结合储存环参数给出了光子束性能的数值计算结果.     

Active long pulse shaping technique of pulsed CO2 laser using multi-pulse discharge control

We describe the pulse forming of pulsed CO₂ laser using multi-pulse superposition technique. Various pulse shapes, high duty cycle pulse forming network (PFN) are constructed by time sequence. This study shows a technology that makes it possible to make various long pulse shapes by activating SCRs of three PFN modules consecutively at a desirable delay time with the aid of a PIC one-chip microprocessor. The power supply for this experiment consists of three PFN modules. Each PFN module uses a capacitor, a pulse forming inductor, a SCR, a high voltage pulse transformer, and a bridge rectifier on each transformer secondary. The PFN modules operate at low voltage by driving the primary of HV pulse transformer. The secondary of the transformer has a full-wave rectifier, which passes the pulse energy to the load in a continuous sequence.We investigated various long pulse shapes as different trigger time intervals of SCRs among three PFN modules. As a result, we could obtain laser beam with various pulse shapes and durations from about 250 to 1000 μs.