Titrimetric determination of silicon dissolved in concentrated HF-HNO3-etching solutions

The wet chemical etching of silicon by concentrated HF-HNO₃ mixtures in solar and semiconductor wafer fabrication requires the strict control of the etching conditions. Surface morphology and etch rates are mainly affected by the amount of dissolved silicon, that is continuously enriched in the etching solution with each etching run. A fast and robust method for the titrimetric determination of the total dissolved silicon content out of the concentrated etching solution is presented. This method is based on the difference between the two equivalence points of the total amount of acid and the hydrolysis of the hexafluorosilicic anion. This approach allows a silicon determination directly from the etching process in spite of the presence of dissolved nitric oxides in the etching solution. The influences of different acid mixing ratios and of the etching solution density depending on the silicon content is considered and discussed in detail.     

Preparation and Characterization of SiO2-MxOy(M = V, Sn, Sb) Thin Films from Silicic Acid and Metal Chlorides

The preparation of SiO₂-M _x O _y (M = V, Sn, Sb) binary oxide thin films by sol-gel method was investigated. The reaction of silicic acid with metal chloride (M = Sn and Sb) or oxychloride (M = V) formed homogeneous solutions. The dip-coating of slide glass and silicon wafer followed by heat treatment gave oxide films having Si—O—M bond. The changes of FT-IR spectra as a function of heat treatment temperature and molar composition confirmed the Si—O—M bonds. The sheet resistance of films increased with an increase on heat treatment temperature and decrease in the content of metal oxide M _x O _y . X-ray diffraction peaks were observed for the SiO₂-V₂O₅ films with high V₂O₅ contents and heat-treated above 250°C, while the others were amorphous. Oxide films heat treated at 500°C had a thickness between 340–470 nm.     

新型包覆数目可控的(CdTe/ZnS)nSiO2微球制备及细胞成像

以水相中快速合成的高质量核壳型CdTe/ZnS量子点为核,通过两步Stber法首次制备了硅壳包覆CdTe/ZnS数目可控的量子点微球(CdTe/ZnS)nSiO2,并完成氨基功能化修饰。通过紫外-可见分光光谱、红外光谱、荧光分光光谱、透射电子显微镜、粒度分析等相关方法对产物进行表征。结果证实:该合成方法不仅简便省时,易于放大生产,而且制备的氨基化微球具有52.1%的高荧光量子产率、稳定性强、生物相容性好。进一步将其用于标记Raw 264.7小鼠单核巨噬细胞和MCF-7人乳腺癌细胞,通过特征性膜成像表现膜电荷的分布,显示其在膜电荷对细胞行为的影响研究方面具有广阔的前景。     

On the mechanism of electroluminescence emission by porous silicon layers

The analytical treatment of a model considering the electrooxidation of p-porous silicon layers under galvanostatic conditions is able to give account of experimental facts such as the shape and location of the electroluminescence peak as well as of the spectral shift of the electroluminescence peak produced by oxidation. The proposed model considers electroluminescence to be the result of electron injection into the conduction band by an adsorbed intermediate produced by electrooxidation of the surface coverage with hydrogen or siloxene of the silicon nanocrystallites. The access of holes to the surface is made possible by low accumulation layer conditions and is the rate determining step in the electroluminescence mechanism. In this way it is possible to give a satisfactory explanation to the shift towards the blue experimented by the electroluminiscence emission maximum as a consequence of electrooxidation.     

Effect of Zirconia Precursor on the Properties of ZrO2-SiO2 Sol-Gel Oxides

Sol-gel zirconia-silica oxides were synthesized with two zirconium precursors, zirconium n-butoxide and zirconium acetylacetonate, and two different hydrolysis catalysts, HCl and H₂SO₄. The samples prepared with HCl were additionally sulfated with a 1 M solution of H₂SO₄. Characterization was performed with FTIR and ²⁹Si-MAS-NMR spectroscopy, as well as with nitrogen adsorption. Because zirconium and silicon alkoxides have different hydrolysis rates, it was necessary to perform a pre-hydrolysis of the silicon alkoxide before mixing. The atom distribution in the ZrO₂-SiO₂ system depended on the zirconium precursor, which also determined the zirconium incorporation in the silica lattice, which was greater for zirconium acetylacetonate. The zirconium precursor also was responsible for the silanol concentration, which increases when samples were sulfated. Sulfating stabilizes the specific surface area. On sulfate samples calcined at 800°C BET areas larger than 500 m²/g were obtained.     

具有类混凝土结构的 SiOx-C锂离子电池复合材料的制备

采用一种简单的方法制备具有类钢筋混凝土结构的Si-O-C负极材料,其中碳纳米管(carbon nanotubes,CNTs)如同钢筋一般嵌入材料中以提供应力支撑,硅原子被原子级分散的碳和氧原子均匀包裹,最后通过化学气相沉积镀上最外层的碳层,进一步抑制材料的体积变化。基于此独特的结构设计制备的CNTs/SiO_x-C/C负极表现出优异的电化学性能,其在0.5 A·g^-1的电流密度下循环970圈后容量保留率为80%。     

具有类混凝土结构的SiOx-C锂离子电池复合材料的制备

采用一种简单的方法制备具有类钢筋混凝土结构的Si-O-C负极材料,其中碳纳米管（carbon nanotubes,CNTs）如同钢筋一般嵌入材料中以提供应力支撑,硅原子被原子级分散的碳和氧原子均匀包裹,最后通过化学气相沉积镀上最外层的碳层,进一步抑制材料的体积变化。基于此独特的结构设计制备的CNTs/SiO_x-C/C负极表现出优异的电化学性能,其在0.5 A·g^-1的电流密度下循环970圈后容量保留率为80%。     

Silicon nitride synthesis in an atmospheric pressure convection—Stabilized arc

Submicron -, -, and amorphous-phase silicon nitride particles have been synthesized in an experimental plasma reactor, using metallic silicon and ammonia as reactants. Injection of ammonia at different locations of the reactor results in different yields. A maximum yield of 85 wt% has been achieved by injecting NH₃ at both downstream and upstream locations of the reactor. The powders synthesized in this way contained approximately 60 wt% silicon nitride in crystal form with equal amounts of and phases. The remainder consisted of the amorphous phase. The average size of the particles ranged from 50 to 90 nm, with a standard deviation of 1.47–1.87 depending on the location of ammonia injection. Seeding with 1 and 10 wt% of preexisting silicon nitride particles for fostering heterogeneous nucleation did not improve the yield, but it changed the particle size distribution.     

电感耦合等离子体光谱法测定铜冶炼烟尘中锌

本实验介绍了电感耦合等离子体光谱法测定铜冶炼烟尘中锌含量的分析方法。针对样品碳,硅含量高的特点,有针对性的研究了样品的消解方法,确定采用盐酸、硝酸、氢氟酸、高氯酸对铜冶炼烟尘样品进行消解。同时进行了干扰试验,确定样品中高含量的铜,铅,砷等对样品测定结果没有影响。并对仪器的工作参数进行了优化。方法检出限为为0.011 mg/L,测定下限为0.019 mg/L,3个样品的相对标准偏差在0.54%~0.92%之间,加标回收率在96%~101.14%之间。该方法样品消解完全,流程短,操作简单,快速,测定准确度高,可以满足铜冶炼烟尘中锌含量的测定。     

EU-1分子筛的合成及其在正己烷异构化反应中的催化性能

在不同硅铝比(nSiO₂/nAl₂O₃)的合成凝胶(含纯硅凝胶)中引入晶种,合成了纯相的EU-1分子筛。研究了铝源、模板剂和晶种添加量对EU-1分子筛的结晶度、形貌尺寸等的影响;重点研究了不同硅铝比对样品结晶度、晶粒尺寸、酸性、比表面积和孔容等的影响。将合成结果绘制成了纯相EU-1分子筛的合成条件三元图,从三元图可看出,晶种法可显著扩大纯相EU-1分子筛的合成区域。将Pt/H-EU-1用于正己烷异构化反应,结果表明,该催化剂具有优异的正己烷异构化活性及稳定性,对异构烷烃有较高的选择性。     

Growth of silicon thin film by LPE on porous silicon bilayers

The fabrication of solar cells based on the transfer of a thin silicon film on a foreign substrate is an attractive way to realise cheap and efficient photovoltaic devices. The aim of this work is to realise a thin mono-crystalline silicon film on a double porous silicon layer in order to detach and transfer it on mullite. The first step is the fabrication of a double porous silicon layer by electrochemical anodisation using two different current densities. The low current leads to a low porosity layer and during annealing, the recrystallisation of this layer allows epitaxial growth. The second current leads to a high porosity which permits the transfer on to a low cost substrate. Liquid Phase Epitaxy (LPE) performed with indium (or In+Ga) in the temperature range of 950–1050°C leads to almost homogeneous layers. Growth rate is about 0.35 μm min⁻¹. Crystallinity of the grown epilayer is similar on porous silicon and on single crystal silicon. In this paper, we focus on the realisation of porous silicon sacrificial layer and subsequent LPE growth. This revised version was published online in July 2006 with corrections to the Cover Date.     

EU-1分子筛的合成及其在正己烷异构化反应中的催化性能

在不同硅铝比(n_SiO2/n_Al2O3)的合成凝胶(含纯硅凝胶)中引入晶种,合成了纯相的EU-1分子筛。研究了铝源、模板剂和晶种添加量对EU-1分子筛的结晶度、形貌尺寸等的影响;重点研究了不同硅铝比对样品结晶度、晶粒尺寸、酸性、比表面积和孔容等的影响。将合成结果绘制成了纯相EU-1分子筛的合成条件三元图,从三元图可看出,晶种法可显著扩大纯相EU-1分子筛的合成区域。将Pt/H-EU-1用于正己烷异构化反应,结果表明,该催化剂具有优异的正己烷异构化活性及稳定性,对异构烷烃有较高的选择性。     

Characterization of silicon nitride particles synthesized in an atmospheric-pressure convection-stabilized arc

Silicon nitride powders were synthesized in an atmospheric-pressure convection-stabilized arc using silicon and ammonia as reactants. The morphology and particle size distributions of the silicon nitride particles were characterized by SEM, TEM, and electron diffraction analyses. The silicon nitride particles collected in the plasma reactor were formed by either gas-condensed phase reactions or chemical vapor reactions. The morphologies of the particles formed by gas-condensed phase reactions consisted of -Si₃N₄ prisms, -Si₃N₄ matte, -Si₃N₄ needles, and spaghetti-like whiskers. For the homogeneously nucleated particles, the morphologies included dendrites, needles, platelets, and amorphous particles. Most of the particles formed were aggregates with particle size distributions ranging from 500 to 1500 Å depending on the location of injection of the reactants.     

Floating Zone Crystal Growth and Structure Analysis of a Novel ScB19 Family Compound, ScB19+xSiy

Single crystals of a novel ScB₁₉ family compound ScB_19+xSi_y were grown by the floating zone method using a four-lamp mirror-type image furnace. A small amount of silicon addition to ScB₁₉ which decomposes at elevated temperatures without melting allowed it to coexist with the liquid phase and as a resultant made the floating zone crystal growth possible. Powder X-ray diffraction analysis confirmed the grown crystals of ScB_19+xSi_y to be isostructural to ScB₁₉. It was found that the crystal structure of ScB_19+xSi_y solved based on single-crystal X-ray data is tetragonal with lattice constants of a, b=1.03081(2) nm, c=1.42589(3) nm, space group P4₁2₁2 or P4₃2₁2 and is basically isotypic with α-AlB₁₂ structure type. In the crystal structure boron atoms form a three-dimensional framework based on interconnected B₁₂ icosahedra and B₂₂ polyhedra. The Sc atoms reside in three of five Al sites in the α-AlB₁₂ structure and Si resides in a bridge site bonding two B₂₂ units.     

Mass spectrometric study of NF3 plasma etching of silicon

NF₃ plasma etching is used for dry cleaning of reactors after plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon from SiH₄. The NF₃ plasma chemistry, in a closed isothermal plasma box with silicon coated walls, is analyzed by mass spectrometry of gases. Silicon is etched as SiF₄ by F atoms produced in the NF₃ dissociation into F+NF₂, or 2F+NF. The NF radicals recombine as N₂ +2F whereas the long-lived NF₂ radicals do not react with Si, but recombine as N₂F₄ This is the main limitation (or fluorine conversion into SiF₄. The pressure increase at the end point of etching is attributed to the sudden increase of F atom concentration in the gas phase and the consequent recombination q( F atoms as F₂.     

MoS x Thin Films by Thermolysis of a Single-Source Precursor

Thin films of MoS _x have been prepared on silicon substrates by spin coating and thermolysis of 0.5 M solutions of alkyldiammonium tetrathiomolybdates in 1,2-ethanediamine (EDA) and 1,2-propanediamine (12PDA). The films have been heat treated in air at temperatures between 80 and 250°C and under N₂ atmosphere at temperatures between 300 and 800°C. X-ray diffraction shows a restricted crystallisation and amorphous residues in both kind of films. EDA-based films exhibit a high tendency to crystallise whereas 12PDA-based films form associated structures with the solvent preventing precursor crystallisation. An insight into the processes occurring in film formation is gained by infrared spectroscopy which indicates a beginning of the decomposition of the 12PDA-based film at temperatures as low as 80°C with incorporation of the diamine solvent. In contrast, the EDA-based films show first signs of a decomposition at 150°C. The decomposition of the intermediate MoS₃ in both cases starts between 250 and 300°C. By means of SNMS depth profiles carbon contents up to 21 and 32 atom-% were found in EDA- and 12PDA-based films, respectively. The films show a significant deficit of sulphur which is compensated by the carbon. Near the surface of the coatings a loss of carbon is observed.     

光沉积制备pSi@CoOx高性能锂离子电池负极材料

选用微米级商业硅铝合金粉末作为原料,采用酸刻蚀、光沉积和后续的还原过程制备了 CoO_x纳米片原位包覆的多孔硅复合材料。探究了不同光沉积时间对pSi@CoO_x材料形貌及其储锂性能的影响。CoO_x纳米片的引入有效改善了材料的导电性并提高了材料的结构稳定性,即使在1 A·g~(-1)的电流密度下循环200圈后,pSi@CoO_x-5的比容量仍能保持774.2 mAh·g~(-1)。     

Kinetische Untersuchungen über die Silicium—Aryl-Spaltung mit Bromwasserstoff

Rate constants of the cleavage reaction of silicon aryl linkages with HBr were estimated for various aryl derivatives by means of NMR. A row of substituents was obtained, dependent on the cleavage rates. Correlation with theHammett function shows the electrophilic character of the reaction. The different cleavage rates give the possibility for specific cleavages of aryl groups from silanes.

     

LB技术制备SnO2-TiO2无机交替纳米薄膜

采用LB技术将SnO₂纳米粒子和TiO₂纳米粒子组装进花生酸的交替多层膜，通过热处理除去膜中的有机成分后，采用红外光谱、紫外可见光谱、X-光电子能谱、低角X-射线衍射、原子力显微镜以及扫描电子显微镜等手段对处理后的膜进行了形貌、组成和结构表征，表明制得的是SnO₂纳米粒子-TiO₂纳米粒子无机-无机交替的均匀的纳米薄膜。     

DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products

Polycrystalline silicon wafers were etched in dc discharges of SF₆. SF_x species were extracted from the discharges and measured with a mass spectrometer. A systematic procedure was used to measure the SF _x ⁺ signals such that they are indicators of events in the discharge close to the sample undergoing etching. The picture that emerges is remarkably simple and shows the relative stability of several SF_x species including SF₆, SF₄, SF₂, and SF which are shown to be extracted from the discharge both in the presence and absence of the silicon sample. When silicon is being etched on the cathode of the discharge cell, the only significant additional products are SiF₄ and S₂F₂. A comparison of blank and sample data for opposite substrate polarities shows that there is only a small cation-assisted etching effect and suggests that ions do not play an important role in the etching of silicon by SF₆ discharges.