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31.
The compression behaviour of Ni77P23 amorphous alloy is investigated at room temperature in a diamond-anvil cell instrument using in-situ high pressure energy dispersive x-ray diffraction with a synchrotron radiation source. The equation of state is determined by fitting the experimental data according to the Birch-Murnaghan equation. It is found that the structure of Ni77P23 amorphous alloy is stable under pressures up to 30.5 GPa. Within the pressure range from zero to the experimental one, the pressure-induced structural relaxation is reversible. 相似文献
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本文介绍了APON的系统结构和网络分层,并根据AAL5 CPCS子层实现的功能及DSP的优良特性,给出了APON系统ONT中AAL5公共会聚子层的一种实现方案,即应用DSP实现CPCS子层的各项功能。 相似文献
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Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy 总被引:1,自引:0,他引:1 下载免费PDF全文
Phase change memory (PCM) cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state (higher resistance state) to the crystalline state (lower resistance state). The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low (only several μA). An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad(Si), which makes it attractive for space-based applications. 相似文献
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We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics. 相似文献
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对以本征Si及重掺杂p型和n型Si作为中间层的Fe/Si多层膜的层间耦合进行研究,并通过退火,增大Fe,Si之间的扩散,分析界面扩散对层间耦合的影响. 实验结果表明,层状结构良好的制备态的多层膜,Fe,Si之间也存在一定程度的扩散,它是影响层间耦合的 主要因素,远远超过了半导体意义上的重掺杂,使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现,在一定范围内增大Fe,Si之间的扩散,即使多层膜的层状结构已经有了相当的退化,Fe/Si多层膜的反铁磁耦合强度基本保持不变.
关键词:
Fe/Si多层膜
层间耦合
界面扩散 相似文献
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