应变层超晶格(InAs)n/(GaAs)n的电子结构与价带能量不连续性

采用内部求和d轨道处理下的线性丸盒轨道方法,对在GaAs衬底上生长的应变层越晶格(InAs)_n/(GaAs)_n(001),(n=1,2,3,4,5)的电子结构进行了第一性原理计算,得出了其能带结构、带隙值和态密度分布.本文得出的(lnAs)_1(GaAs)_1在布里渊区中各高对称点的能隙值与从头赝势方法的计算结果相一致,得出的带隙值与光致发光实验结果符合得很好.为了确定该系统的价带能量不连续值(△E_(?)),并全面考虑各因素对其的影响,本文提出一种基于自治超原胞计算及其冻结势处理下的形变势方法.该方 关键词：     

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.     

Effect of fabrication conditions on the properties of indium tin oxide powders

This paper reports that indium tin oxide （ITO） crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity c and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350℃ and Sn doping content 6～8wt% are determined. The application of ITO in the military camouflage field is proposed.     

Third-Order Nonlinear Optical Susceptibility of Indium Phosphide Nanocrystals

InP nanocrystals synthesized by refluxing and annealing of organic solvent are determined from XRD measurements to have an averse granularity of 25 nm. The nonlinear optical properties of the InP nanocrystals studied by using laser Z-scan technique with 50 ps pulses at 532nm are found to reveal strong nonlinear optical properties and two-photon absorption phenomenon. Also, the nonlinear absorption coeffcient, the nonlinear refractive index and the third-order nonlinear optical susceptibility are determined by experiments, in which the nonlinear refractive index is three orders of magnitude larger than that of bulk InP.     

Optimum Indium Concentration for Growth of 1.3μmInAs/InxGa1-xAs Quantum Dots in a Well

Five InAs/InxGa1-xAs quantum dots in a well （DWELL） with different indium concentration x are grown by solid source molecular beam epitaxy. The high quantum dot density is observed in the InAs/In0.3Ga0.7As DWELL. The photoluminescence （PL） experiments indicate that the ground state peaks of InAs/In0.15 Ga0.85As and InAs/In0.22 Ga0.78As DWELLs shift to 1.31 and 1.33μm, respectively. The optical properties are investigated by using the PL and piezoreflectance spectroscope methods. An abnormal blue shift has been observed with the further increase of x from 0.22 to 0.30.     

In-Cu/SiO2催化剂用于醋酸甲酯加氢反应制乙醇

工业上常用玉米生产乙醇,从而造成粮食和燃料的选择两难局面.随着页岩气研究的不断深入以及全球可观的煤炭存量,用醋酸甲酯加氢制乙醇已引起广泛关注.铜基催化剂对酯加氢生成醇有高的转化率和选择性,其中铜铬催化剂性能较高,但铬对人体和环境的潜在危害限制了其广泛应用.Cu/SiO2催化剂价格低廉,环境友好,但其稳定性较差,容易失活不利于工业上应用.因此人们对Cu/SiO2催化剂进行改性.本文采用氨蒸法制备了一系列掺杂不同量氧化铟(In2O3)的Cu催化剂(In-Cu/SiO2).采用X射线衍射(XRD)、氮气吸脱附、氢气程序升温脱附(H2-TPD)、傅里叶变换红外光谱(FT-IR)、X射线光电子能谱(XPS)、透射电子显微镜(TEM)以及电感耦合等离子体发射光谱(ICP-OES)等手段对催化剂进行了表征,同时评价了催化剂的活性和稳定性.结果发现,In2O3的改性提高了Cu/SiO2催化剂在醋酸甲酯加氢制乙醇反应中的活性和稳定性; 其中当添加1%In2O3时,醋酸甲酯转化率从83.7%提高至97.8% (反应温度523 K,反应压力3 MPa,氢酯摩尔比15,液时空速2 h?1),且对液时空速的变化耐受性比较强.当液时空速大于3 h?1时,随着液时空速的增加,Cu/SiO2催化剂的活性和选择性急剧下降,而1In-Cu/SiO2催化剂变化相对较小.TEM和XRD结果表明,适量In2O3的掺入改善了Cu/SiO2催化剂活性组分的分散性,铜粒径变小;FT-IR和N2O化学吸附结果显示,In2O3的加入使得页硅酸铜含量增加,从而有效地抑制了催化剂还原过程中铜的聚合,因此催化剂性能提高.XPS结果表明,表面Cu0和Cu+活性位点之间的协同作用有助于改善催化剂性能.Cu/SiO2和1In-Cu/SiO2催化剂100 h的稳定性测试发现,Cu/SiO2催化剂的失活主要是由于活性组分颗粒尺寸聚集变大和表面Cu0和Cu+分布的破坏所致; 而1In-Cu/SiO2催化剂物化性质几乎保持不变,表明适量的In2O3可稳定Cu/SiO2催化剂,延长其使用寿命.由此推断,In2O3可能作为一种隔离剂以抑制铜纳米粒子的热迁移和聚集,从而有效地提高Cu/SiO2催化剂活性和稳定性.     

半导体氮化铟(InN)的晶格振动

本文总结了新型半导体InN薄膜晶格振动研究的现状,主要为Raman散射光谱及部分红外光谱的研究结果。重点内容为InN(包括六方纤锌矿结构和立方闪锌矿结构)的布里渊区中心(Γ点)声子结构、电子激发态(等离子激元)与纵光学声子耦合、无序化激发模和晶格振动模的温度、应力效应等,也涉及部分和InN有关的氮化物合金以及超晶格、量子阱和量子点等结构的晶格振动研究。同时对相关材料和结构的Raman光谱研究作了一些展望。     

平均价电子数与掺杂铁基砷化物超导电性关系

文中提出一个计算掺杂铁基砷化物平均价电子数的方法,研究了掺杂铁基砷化物平均价电子数Zv 和转变温度Tc之间的关系,发现他们之间有一定的规律性,由此,提出用平均价电子数作为提高掺杂铁基砷化物超导电性的一个新依据.     

可见分光光度法研究In3+与Zr4+、Ce3+、Rh3+和Ga3+的浮选分离

用可见分光光度法研究了溴化四丁基铵-碘化钾-水体系浮选分离铟的行为,探讨了In3+与-些金属离子分离的条件.结果表明,当溶液中溴化四丁基铵和碘化钾的浓度分别为6.0×10-4mol/L和5.0×10-3mol/L时,In3+与Zp+、Ce3+、Rh3+和Ga3+可定量分离.     

100-nm T-gate InAIAs/InGaAs InP-based HEMTs with fT= 249 GHz and fmax ： 415 GHz

InA1As/InGaAs high electron mobility transistors （HEMTs） on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length and gate width of 2 × 50 μm shows excellent DC characteristics, including full channel current of 724 mA/mm, extrinsic maximum transconductance gm.max of 1051 mS/mm, and drain-gate breakdown voltage BVDG of 5.92 V. In addition, this device exhibits fT = 249 GHz and fmax = 415 GHz. These results were obtained by fabricating an asymmetrically recessed gate and minimizing the parasitic resistances. The specific Ohmic contact resistance was reduced to 0.031 0.mm. Moreover, the fT obtained in this work is the highest ever reported in 100-nm gate length InA1As/InGaAs InP-based HEMTs. The outstanding gm.max, fT, fmax, and good BVDG make the device suitable for applications in low noise amplifiers, power amplifiers, and high speed circuits.