改进SPH方法在陶瓷材料层裂数值模拟中的应用

为了探讨铝飞片撞击陶瓷材料时的层裂现象,采用改进SPH方法模拟应力波在陶瓷材料中的传播。结果表明,当离散粒子分布不均匀时,数值模拟计算的自由面速度时程曲线与实测曲线吻合良好。对比CSPM方法,改进SPH方法的精度更高。提出适用于数值模拟的陶瓷材料损伤演化方程,对脉冲载荷下陶瓷/钢层合板层裂的破坏过程进行数值模拟,结果表明,由于陶瓷的波阻抗高于钢的,且抗压强度远高于抗拉强度,因此拉应力引起的层裂破坏是主要的。即使在材料内部传播的只是弹性压缩波,当弹性波到达材料界面时,由界面反射引起的卸载波也能导致陶瓷发生层裂破坏。     

原子层沉积氧化铝薄膜摩擦学性能研究

不同温度条件下,采用原子层沉积(ALD)技术在单晶硅基底表面制备了Al2O3薄膜.利用原子力显微镜观察了Al2O3薄膜的表面形貌和粗糙度,利用纳米压痕仪测定了薄膜的硬度,并通过UMT-2型往复摩擦磨损试验机(球-盘接触方式)考察了制备温度、载荷和对偶球对Al2O3薄膜的摩擦学性能的影响.结果表明:不同温度条件下制备得到的Al2O3薄膜的粗糙度不同;制备温度为100和200℃的Al2O3薄膜的摩擦性能较优;在所用载荷范围内,摩擦系数存在最低值;与不同对偶球对摩时,由于对偶球硬度不同,Al2O3薄膜呈现不同的摩擦磨损现象.     

两性霉素B与鞘磷脂单分子层的相互作用

选取哺乳动物生物膜中的重要脂质分子鞘磷脂(SM)作为单分子膜的基本组分, 采用Langmuir-Blodgett(LB)膜技术研究了不同比例的两性霉素B/鞘磷脂单层膜的表面压力-平均分子面积(π-A)曲线以及基于π-A曲线的混合性分析, 同时通过原子力显微镜(AFM)研究了其表面形态的变化. 结果表明, 组分间的摩尔比和表面压力对混合单层膜稳定性、混合性以及分子间相互作用具有重要影响.     

钯/聚苯胺纳米多层膜的制备及对抗坏血酸和多巴胺的催化氧化

采用脉冲电位法(PPSM)结合聚苯胺(PANI)的层层自组装制备了Pd/PANI交替沉积纳米多层膜, 并用于抗坏血酸(AA)和多巴胺(DA)的检测. 实验发现, 多层膜结构形貌及催化性能受前躯体K₂PdCl₆浓度、 脉冲条件及膜厚度等影响. 当K₂PdCl₆浓度为2×10^-3 mol/L, 阴极脉冲电位为-0.3 V, 阶跃次数为17时, 5层Pd/PANI修饰玻碳电极对AA和DA的催化性能最佳; 在0.1 mol/L磷酸盐缓冲液中, AA和DA的氧化峰明显分离[ΔE_p(AA, DA)=160 mV], 其峰电流与浓度分别在5×10^-5～4×10^-4和4×10^-5～1×10^-4 mol/L范围内呈较好线性关系, 实现了对AA和DA的同时测定. 该修饰电极具有良好的抗干扰性和稳定性.     

碱性聚合物电解质燃料电池电极疏水性对性能的影响

本文报道H₂-O₂型碱性聚合物电解质燃料电池（APEFC）电极疏水性对放电性能的影响. 以季铵化聚砜（QAPS）或自交联型季铵化聚砜（xQAPS）碱性聚电解质（APE）作为隔膜和电极中的电解质（Ionomer）、聚四氟乙烯（PTFE）作为疏水添加剂调控催化层疏水性. 结果表明,阳极催化层疏水性的增强有利于提升电池放电性能,而阴极催化层疏水性适中时电池性能最优. 采用疏水性较强的xQAPS作为电解质并在阳极催化层中添加适量PTFE疏水剂,在60 ^oC和100%相对湿度的条件下,280 mA·cm^-2电流密度时,电池最高功率密度达132 mW·cm^-2.     

非晶Cr/Ge多层膜的磁性和电性能研究

采用射频磁控溅射的方法制备了非晶[Crx/Ge10-x]20(x=0.1,0.3,0.5,0.8,1.1,1.6,2.7)多层膜.随着Cr层厚度增加,Ge层厚度减小,室温下薄膜磁性由抗磁性转变为铁磁性,同时样品出现了反常霍尔效应.扣除Ge层的抗磁性,制备态的[Cr2.7/Ge7.3]20的饱和磁化强度Ms可达33 emu/cm3.提出了磁性起源于Cr原子层间耦合的模型,薄膜的低温电阻导电机理属于自旋依赖电子变程跃迁机制.     

Multipeak-structured photoluminescence mechanisms of as-prepared and oxidized Si nanoporous pillar arrays

Silicon dominates the electronic industry, but its poor optical properties mean that it is not preferred for photonic applications. Visible photoluminescence (PL) was observed from porous Si at room temperature in 1990, but the origin of these light emissions is still not fully understood. This paper reports that an Si nanocrystal, silicon nanoporous pillar array (Si-NPA) with strong visible PL has been prepared on a Si wafer substrate by the hydrothermal etching method. After annealing in O₂ atmosphere, the hydride coverage of the Si pillar internal surface is replaced by an oxide layer, which comprises of a great quantity of Si nanocrystal (nc-Si) particles and each of them are encapsulated by an Si oxide layer. Meanwhile a transition from efficient triple-peak PL bands from blue to red before annealing to strong double-peak blue PL bands after annealing is observed. Comparison of the structural, absorption and luminescence characteristics of the as-prepared and oxidized samples provides evidence for two competitive transition processes, the band-to-band recombination of the quantum confinement effect of nc-Si and the radiative recombination of excitons from the luminescent centres located at the surface of nc-Si units or in the Si oxide layers that cover the nc-Si units because of the different oxidation degrees. The sizes of nc-Si and the quality of the Si oxide surface are two major factors affecting two competitive processes. The smaller the size of nc-Si is and the stronger the oxidation degree of Si oxide layer is, the more beneficial for the luminescent centre recombination process to surpass the quantum confinement process is. The clarification on the origin of the photons may be important for the Si nanoporous pillar array to control both the PL band positions and the relative intensities according to future device requirements and further fabrication of optoelectronic nanodevices.     

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.     

平面应变 Biot 固结的解析层元

提出用解析层元法有效地解决任意深度单层土的平面应变 Biot 固结问题. 从 Biot 固结问题的控制方程出发, 采用特征值法在 Laplace-Fourier 变换域内推导出一个精确对称的解析层元刚度矩阵. 通过表示单层土广义力和广义位移之间关系的解析层元, 并结合土层的边界条件, 推导出土层任意点的解答; 物理域内的真实解可以通过 Laplace-Fourier 数值逆变换进一步获得. 通过数值计算验证理论的正确性, 研究了土层性质及时间因素对固结的影响.}      

以聚电解质多层膜为纳米反应器制备Au@Pt核壳纳米粒子

以聚二烯丙基二甲基氯化铵和聚苯乙烯磺酸钠为构筑单元,通过静电层层自组装制备了多层膜,利用薄膜中存在的抗衡阴离子,选择AuCl-4和PtCl2-6作为Au和Pt的前驱体,通过连续的阴离子交换/还原,原位制备了Au-Pt双金属纳米粒子。 紫外-可见分光光度法、透射电子显微镜和能量色散X射线能谱数据表明,在聚电解质多层薄膜中成功地制备了具有核壳结构的Au@Pt双金属纳米粒子。 这种纳米粒子在电化学催化、燃料电池方面具有潜在的应用价值。