非晶Cr/Ge多层膜的磁性和电性能研究

采用射频磁控溅射的方法制备了非晶[Crx/Ge10-x]20(x=0.1,0.3,0.5,0.8,1.1,1.6,2.7)多层膜.随着Cr层厚度增加,Ge层厚度减小,室温下薄膜磁性由抗磁性转变为铁磁性,同时样品出现了反常霍尔效应.扣除Ge层的抗磁性,制备态的[Cr2.7/Ge7.3]20的饱和磁化强度Ms可达33 emu/cm3.提出了磁性起源于Cr原子层间耦合的模型,薄膜的低温电阻导电机理属于自旋依赖电子变程跃迁机制.     

Multipeak-structured photoluminescence mechanisms of as-prepared and oxidized Si nanoporous pillar arrays

Silicon dominates the electronic industry, but its poor optical properties mean that it is not preferred for photonic applications. Visible photoluminescence (PL) was observed from porous Si at room temperature in 1990, but the origin of these light emissions is still not fully understood. This paper reports that an Si nanocrystal, silicon nanoporous pillar array (Si-NPA) with strong visible PL has been prepared on a Si wafer substrate by the hydrothermal etching method. After annealing in O₂ atmosphere, the hydride coverage of the Si pillar internal surface is replaced by an oxide layer, which comprises of a great quantity of Si nanocrystal (nc-Si) particles and each of them are encapsulated by an Si oxide layer. Meanwhile a transition from efficient triple-peak PL bands from blue to red before annealing to strong double-peak blue PL bands after annealing is observed. Comparison of the structural, absorption and luminescence characteristics of the as-prepared and oxidized samples provides evidence for two competitive transition processes, the band-to-band recombination of the quantum confinement effect of nc-Si and the radiative recombination of excitons from the luminescent centres located at the surface of nc-Si units or in the Si oxide layers that cover the nc-Si units because of the different oxidation degrees. The sizes of nc-Si and the quality of the Si oxide surface are two major factors affecting two competitive processes. The smaller the size of nc-Si is and the stronger the oxidation degree of Si oxide layer is, the more beneficial for the luminescent centre recombination process to surpass the quantum confinement process is. The clarification on the origin of the photons may be important for the Si nanoporous pillar array to control both the PL band positions and the relative intensities according to future device requirements and further fabrication of optoelectronic nanodevices.     

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.     

平面应变 Biot 固结的解析层元

提出用解析层元法有效地解决任意深度单层土的平面应变 Biot 固结问题. 从 Biot 固结问题的控制方程出发, 采用特征值法在 Laplace-Fourier 变换域内推导出一个精确对称的解析层元刚度矩阵. 通过表示单层土广义力和广义位移之间关系的解析层元, 并结合土层的边界条件, 推导出土层任意点的解答; 物理域内的真实解可以通过 Laplace-Fourier 数值逆变换进一步获得. 通过数值计算验证理论的正确性, 研究了土层性质及时间因素对固结的影响.}      

以聚电解质多层膜为纳米反应器制备Au@Pt核壳纳米粒子

以聚二烯丙基二甲基氯化铵和聚苯乙烯磺酸钠为构筑单元,通过静电层层自组装制备了多层膜,利用薄膜中存在的抗衡阴离子,选择AuCl-4和PtCl2-6作为Au和Pt的前驱体,通过连续的阴离子交换/还原,原位制备了Au-Pt双金属纳米粒子。 紫外-可见分光光度法、透射电子显微镜和能量色散X射线能谱数据表明,在聚电解质多层薄膜中成功地制备了具有核壳结构的Au@Pt双金属纳米粒子。 这种纳米粒子在电化学催化、燃料电池方面具有潜在的应用价值。     

直接脱碳酸化制备有机离子插层的层状双氢氧化物

层状双氢氧化物(Layered double hydroxide, LDH)是一种具有阴离子可交换性质的层状无机材料, 由于其具有多种功能性质, 已被广泛应用于催化^[1~3]、酸吸附剂^[4]、传感器^[5]及聚合物填料^[6~8]等领域. 传统的共沉淀法制备的LDH结晶度低、尺寸小(直径通常小于100 nm). 1998年, Costantino等^[9]采用均匀沉淀法制备出了高结晶度、大尺寸(微米量级)且层间具有CO₃^2-的LDH(LDH-CO₃), 引起了人们的极大兴趣. 为解决LDH-CO₃难于交换和剥离的难题, Iyi等^[10,11]采用两步法制备了层间具有NO₃^- 或有机阴离子的LDH, 即首先采用 HCl-NaCl混合溶液将LDH-CO₃转化成为LDH-Cl, 然后再采用过量的阴离子进行交换制备LDH-NO₃或有机阴离子插层的LDH.     

应力各向异性下耦合三层薄膜铁磁共振

研究铁磁/铁磁/反铁磁三层薄膜中应力各向异性场对共振场的影响.得到系统存在声学和光学两种模,并且随着应力场的增强,在某些区域声学模和光学模共振场均向高值方向移动.此外发现声学模共振场对两铁磁层厚度的依赖较大,对光学模而言,随着两铁磁层厚度的改变,应力各向异性场对其共振场的影响甚微.     

碳纳米管表面金纳米线的结构与热稳定性分析

用分子动力学方法研究了覆盖在碳纳米管表面的金原子所形成的结构及其热稳定性. 研究结果表明,金原子在碳纳米管表面能形成多样而稳定的结构：当金原子覆盖率低于15.91% 时,形成金纳米颗粒; 当原子覆盖率为15.91%~104.98% 时,形成一系列的壳层结构; 而当原子覆盖率大于104.98% 时,则呈现晶体金的面心立方结构. 在对有碳纳米管支撑的金纳米壳层结构的热稳定性进行研究后, 发现其熔点高于金纳米颗粒的熔点而且低于金纳米线的熔点.     

敷去耦层有限加筋板声辐射近似解析解

本文主要研究了流体负载下敷设去耦阻尼层的加筋板,在外界激励力作用下的振动和声辐射,推导出了敷设去耦层有限长加筋板的振动响应和水下辐射噪声近似解析解。采用弹性理论来描述去耦层,并采用模态迭加理论构造响应函数,将加强筋等效为线力的作用,以复模量形式计及去耦阻尼层损耗因子,建立了敷设去耦阻尼层加筋板的理论解析模型,结合加筋板与去耦层变形连续条件、结构与流体连续性条件组成了声-流体-结构的耦合方程,结合数值计算方法,得到了有限长加筋板结构的振动位移及水下辐射噪声。开展相应数值算例与模型试验结果吻合较好,验证本文方法的正确性。     

A COORDINATE TRANSFORMATION METHOD FOR NUMERICAL SOLUTIONS OF TRAVELING-WAVE ELECTROOMTIC FLOWS IN MICROCHANNEL

采用坐标变换法数值求解了耦合的Poisson-Nernst-Planck（PNP）方程和Navier—Stokes（NS）方程,研究二维狭窄微通道行波电场电渗流数值解．数值结果表明,坐标变换法能有效降低电渗流解数值解在双电层的高梯度,有效改善数值解的收敛性和稳定性．坐标变换的电渗流数值解和原始坐标下的数值解完全一致．坐标变换后采用简单的网格也能得到和原始坐标下复杂网格相同的解．给出了滑移边界的近似解与完整的PNP—NS数值解的比较．在双电层厚度与微通道深度比值（λ／H）很小的情况下（相对深通道）,两者的解基本一致．但在λ／H较大时（相对浅通道）滑移边界的解高于电渗流速度．