低温超薄高效Cu(In,Ga)Se2太阳电池的实现

衬底温度保持恒定, 在Se气氛下按照一定的元素配比顺序蒸发Ga, In, Cu制备厚度约为0.7 μrm的Cu(In_0.7Ga_0.3)Se₂ (CIGS)薄膜. 利用X射线衍射仪分析薄膜的晶体结构及物相组成, 扫描电子显微镜表征薄膜形貌及结晶质量, 二次离子质谱仪测试薄膜内部元素分布, 拉曼散射谱 分析薄膜表面构成, 带积分球附件的分光光度计测量薄膜光学性能. 研究发现在Ga-In-Se预制层内, In主要通过晶界扩散引起Ga/(Ga+In)分布均匀化. 衬底温度高于450 ℃时, 薄膜呈现单一的Cu(In_0.7Ga_0.3)Se₂相; 低于400℃, 薄膜存在严重的Ga的两相分离现象, 且高含Ga相主要存在于薄膜的上下表面; 低于300 ℃, 薄膜结晶质量进一步恶化. 薄膜表层的高含Ga相Cu(In_0.5Ga_0.5)Se₂以小晶粒形式均匀分布于薄膜表面, 增加了薄膜的粗糙度, 在电池内形成陷光结构, 提高了超薄电池对光的吸收. 加上带隙值较小的低含Ga相的存在, 使电池短路电流密度得到较大改善. 衬底温度在550 ℃–350 ℃变化时, 短路电流密度J_SC是影响超薄电池转换效率的主要因素; 而衬底温度T_sub低于300 ℃时, 开路电压V_OC和填充因子FF降低已成为电池性能减退的主要原因. T_sub为350 ℃时制备的0.7 μm左右的超薄CIGS电池转换效率达到了10.3%. 关键词： 2薄膜')" href="#">Cu(In,Ga)Se₂薄膜 衬底温度 超薄 太阳电池     

H2载气流量对AlN缓冲层生长的影响

在Si(111)衬底上用金属有机化学气相沉积(MOCVD)设备生长了AlN和GaN薄膜。采用高分辨X射线衍射、椭圆偏振光谱仪和原子力显微镜研究了AlN缓冲层生长时的载气(H2)流量变化对GaN外延层的影响。椭圆偏振仪测试表明:相同生长时间内AlN的厚度随着H2流量的增加而增加,即H2流量增加会导致AlN生长速率的提高。原子力显微镜测试表明:随着H2流量的增加,AlN表面粗糙度也呈上升趋势。XRD测试表明:随着AlN生长时的H2流量的增加,GaN的(0002)和(1012)峰值半宽增大,即螺型穿透位错密度和刃型穿透位错密度增加。可能是由于AlN缓冲层的表面形貌较差,导致GaN的晶体质量有所下降。实验结果表明:采用较低的H2流量生长AlN缓冲层可以控制AlN的生长速率,在一定程度上有助于提高GaN的晶体质量。     

基于光纤阵列的激光光斑测量方法

提出一种基于光纤阵列的激光光斑时空分布测量方法,采用在多层石英平板上制作V型槽并层叠石英光纤阵列的方法,获得了具有较高抗激光损伤能力和空间分辨力的光纤阵列取样器,实现了激光光斑的空间分布取样。给出了光纤阵列的取样原理、取样器结构和大倍数光强衰减的设计。实验结果表明:光纤阵列抗激光损伤能力优于10 kW/cm2(50 s),系统空间分辨力优于3 mm,测量误差小于3%。     

Optical constants of aluminum films prepared by electron beam evaporation

The metal aluminum （Al） is widely used because it has high reflectivity from the ultraviolet to the infrared band. But the new deposited Al films is exposed to the atmosphere, it forms transparent Al2O3 films on its surface at once. In this letter, the Al films is deposited on the quartz substrate by electron beam evaporation. The effect of Al films oxidation on refractive index and extinction coefficient is investigated by spectroscopic ellipsometry （SE）. The optical constants of Al films change with the increase of oxidation time. The two parameters become stable when these films are exposed in air more than 2 days.     

A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

In this paper, a novel dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor (DGDI LTIGBT) structure, which features a double extended trench gate and a dielectric inserted in the drift region, is proposed and discussed. The device can not only decrease the specific on-resistance Ron,sp , but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 A·cm-2 with a small half-cell pitch of 10.5 μm, a specific on-resistance R on,sp of 187 mΩ·mm2,and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.     

环氧氯丙烷成胶法制备磷酸盐及其催化性质

对环氧氯丙烷成胶法等技术制备的金属磷酸盐进行了研究,对所制备的一系列磷酸盐用BET、XRD、IR和TG-DTA表征,比较了它们在催化反应中的酸性.结果表明,环氧氯丙烷成胶法制备得到的鳞石英型结构磷酸铝具有较强的酸性;而对于Fe3+、Ca2+,只得到相应的比表面积较小的偏磷酸盐结构化合物.     

α-β石英相变的应变参数计算及其地质意义

 利用已有的α和β石英压缩性、热膨胀性、弹性及相变温度压力资料，计算了α-β石英相转变时，α和β石英的晶胞参数。依据虎克定律以及高压下β石英的弹性参数，估算了α-β石英相转变时的应变、应力和应变能。结果表明，在0~1.1 GPa条件下，随压力升高，α-β石英相变的线应变介于-0.006~0.005之间，体应变介于-0.016~0.012之间，应力介于-0.46~0.14 GPa之间；应变能介于965~2 760 kJ/m³之间。压力为0.5 GPa左右时，α-β石英相变的应变、应力和应变能均达到最小值。在此基础上，讨论了壳内大规模酸性岩浆活动引起的α-β石英相变对壳内岩石的作用。     

Growth of Silicon Nanowires by Heating Si substrate

Amorphous silicon nanowires were prepared by heating an Si substrate at high temperatures using an Ni (or Au) catalyst.The nanowires have a diameter of 10-40nm and a length of up to several tens of micrometres.Unlike the well-known vapour-liquid-solid mechanism,a solid-liquid-solid mechanism appeared to control the nanowire growth.The heating process had a strong influence on the growth of silicon nanowires.It was found that ambient gas was necessary to grow nanowires.This method can be used to prepare other kinds of nanowires.     

The influence of SiNx substrate on crystallinity of μc-Si film used in thin film transistors

This paper found that the crystalline volume ratio （Xc） of μc-Si deposited on SiNx substrate is higher than that on 7059 glass. At the same silane concentration （SC） （for example, at SC=2%）, the Xc of μc-Si deposited on SiNx is more than 64%, but just 44% if deposited on Conning 7059. It considered that the ‘hills＇ on SiNx substrate would promote the crystalline growth of μc-Si thin film, which has been confirmed by atomic force microscope （AFM） observation. Comparing several thin film transistor （TFT） samples whose active-layer were deposited under various SC, this paper found that the appropriate SC for the μc-Si thin film used in TFT as active layer should be more than 2%, and Xc should be around 50%. Additionally, the stability comparison of μc-Si TFT and a-Si TFT is shown in this paper.