硼碳氮纳米管的热解法制备及生长机理研究

以乙二胺、二茂铁和硼氢化钠为原料,以N2和H2为辅气,用钴作催化剂,在不同温度下制备出了具有竹节状结构的硼碳氮(BCN)纳米管.根据透射电子显微镜观察,分析了BCN纳米管的生长机理.B和N的同时掺杂,所形成的五边形结构比单独N掺杂时具有更低的形成能,是竹节状结构形成的主要原因.用Raman光谱可以用来表征BCN纳米管中B和N的掺杂程度及纳米管的质量.分析表明,在860℃下制备的BCN纳米管竹节状结构最密集,质量最好,产率最高.扫描俄歇微探针分析表明,在860℃下制备的BCN纳米管的元素组成比为B∶N∶C= 关键词： BCN纳米管 热解 透射电子显微镜 Raman光谱     

等离子喷涂陶瓷涂层的声学显微象

木文应用了声学显微镜分析了等离子喷涂陶瓷涂层(Metco 136F,Metco 80NS,国产Al_2O_3)于磨削加工和摩擦试验后的表面及内部结构特征。结果表明,声学显微镜能无破坏地观察材料内部的紧密度、空穴、变形、缺陷、裂纹等,反映了材料的力学象。这是传统的光学显微镜、扫描电子显微镜无法相比的。声学显微镜与光学显微镜、扫描电子显微镜配合,必将使材料科学的研究进入一个新的时代。     

H等离子体处理对Si中He注入空腔引起的效应

室温下分别采用40,160和1550 keV的He离子注入单晶Si样品到相同的剂量5×10¹⁶cm^-2,部分经He注入过的样品然后再分别接受高密度H等离子体处理.利用透射电子显微镜分析比较了随后800°C高温退火引起的空腔形成.结果表明,附加的H等离子体处理对空腔生长所产生的效应明显地依赖于He离子的能量.对于40 keV He离子注入,空腔的形成和热生长似乎不受H等离子体处理的影响,而对于160 keV He离子注入,附加的等离子体处理则促进了空腔的生长并伴随着空腔分布区域的变窄.对于1550keV He离子注入,H等离子体处理对空腔产生的效应介于40和160 keV注入情况之间.结合H等离子体处理在Si中所引起的缺陷的产生及其热演变过程对实验结果进行了讨论.     

Thermal Properties of Materials Characterized by Scanning Electron-Acoustic Microscopy

A modified technique of scanning electron-acoustic microscopy is employed to determine thermal diffusivity of materials. Using the dependence of the electron-acoustic signal on modulation frequency of the electron beam, the thermal diffusivity of materials is characterized based on a simplified thermoelastic theory. The thermal diffusivities of several metals characterized by the modified scanning electron-acoustic microscopy are in good agreement with the referential values of the corresponding materials, which proves that the scanning electronacoustic microscopy can be used to characterize the thermal diffusivity of materials effectively. In addition, for micro-inhomogeneous materials, such as biological tissues, the macro-effective （average） thermal diffusivities are characterized by the technique.     

Preparation and photoluminescence of TiO2/PS composite system

<正>A TiO_2/porous silicon(PS) composite system is prepared by chemical vapor deposition.The crystal form with anatase phase of the samples is evaluated by X-ray diffraction and ultraviolet-visible(UV-vis) absorbance spectra,and the morphology with microsphere of TiO_2 particles is characterized by scanning electron microscopy.The composite system formed by this technique gives a broad blue luminescence and the mechanism of photoluminescence with TiO_2/PS is also discussed.     

Photonic Band Gap Properties of Three-Dimensional SiO2 Photonic Crystals

Three-dimensional SiO2 photonic crystals （PhCs） are fabricated on quartz substrates by the vertical deposition method. Scanning electron microscopy measurement reveals that the samples exhibit an ordered close-packed arrangement of SiO2 spheres. It is found that the position of the [111] photonie band gap （PBG） shifts to a long wavelength （red shift） with increasing sphere size. Gap broadening effects are observed due to the presence of defects in the samples. Moreover, the optical properties of the PBG are very sensitive to the annealing temperature. Our results indicate that the optical properties of the PBG can be easily tuned in the visible region by appropriate experimental parameters, which will be useful for practical applications of PhC optical devices.     

Dynamic Fracture Toughness and Failure Mechanisms of ZnO Whiskers Secondary Reinforced Composites

Quasi-static and dynamic fracture properties and damage mechanism of glass fiber polymer composites embeaaea with different mass percentages of ZnO whiskers are investigated by using an Instron Testing machine and a Split- Hopkinson pressure bar. According to the experimental results and linear fracture mechanics, the quasi-static fracture toughness Kic and the dynamic fracture toughness Kid under various impact velocities of specimens are obtained. Fracture mechanism is investigated by fractography analysis with a scanning electron microscope. The experimental results show that the mass percentage of ZnOw has little influence on the quasi-static fracture toughness, but a little influence on the dynamic fracture toughness and time of initial fracture point of specimens by the reason of various fracture mechanisms.     

Electrical Property of Infrared-Sensitive InAs Solar Cells

InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p？n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.     

Effects of Rapid Thermal Processing on Microstructure and Optical Properties of As-Deposited Ag2O Films by Direct-Current Reactive Magnetron Sputtering

（111） preferentially oriented Ag2O film deposited by direct current reactive magnetron sputtering is annealed by rapid thermal processing at different annealing temperatures for 5 min. The film microstructure and optical properties are then characterized by x-ray diffractometry, scanning electron microscopy, and spectrophotometry, respectively. The results indicate that no clear Ag diffraction peak is discernable in the Ag2O film annealed below 200°C. In comparison, the Ag2O film annealed at 200°C begins to exhibit characteristic Ag diffraction peaks, and in particular the Ag2O film annealed at 250°C can demonstrate enhanced Ag diffraction peaks. This implies that the threshold of the thermal decomposition reaction to produce Ag particles is approximately 200°C for the Ag2O film. In addition, an evolution of the film surface morphology from compact and pyramid-like to a rough and porous structure clearly occurred with increasing annealing temperature. The porous structure might be attributable to the escape of the oxygen produced during annealing, while the rough surface might originate from the reconstruction of the surface. The dispersion of interference peak intensity in the reflectance and transmission spectra could be attributed to the Ag particles produced. The lowered crystallinity and Ag particles produced induce a lattice defect, which results in an enhanced transmissivity in the violet region and a weakened transmissivity in the infrared region.