超高分辨率光电子能谱仪和超导电子态的直接观察

文章较系统地介绍了光电子能谱仪的基本原理和现有光电子能谱仪的问题．在此基础上介绍了激光超高分辨率光电子能谱仪的优点，它采用的是Nd：YVO4激光六次谐波输出作为激光光源．最后给出了使用这台分辨率达0．36meV的超高分辨率光电子能谱仪，在国际上首次直接观察到CeRu2化合物超导体在超导态时的电子聚集和超导能隙。     

表面包覆TiO2纳米微粒的结构表征、电子态与性质

报道用微乳液法制备TiO₂纳米微粒的过程和条件,并对纳米微粒的结构、形貌等进行了表征,分析了量子尺寸效应对它的光吸收的影响,并对其光学非线性进行了初步研究。     

N2O+离子A2∑+电子态的光谱研究

用一束波长为360.55 nm的激光,通过N2O分子的(3+1)共振增强多光子电离过程制备纯净的母体离子N2O+X2Ⅱ3/2,1/2(000).用另一束可调谐激光将N2O+离子激发至预解离态A2Σ+,利用飞行时间质谱检测解离碎片NO+离子强度随光解光波长的变化,在278-328 nm波长范围内获得了光解碎片的激发(PHOFEX)谱.观测到了N2O+离子A2Σ+←X2Ⅱ电子跃迁较丰富的振动谱带.通过对PHOFEX光谱的标识,获得了A2∑+态较准确和全面的分子光谱常数.     

Si(100)表面电子态的总电流谱研究

用自制的总电流谱仪研究了Si(100)2×1清洁表面以及H原子饱和吸附后的Si(100)1×1-2H双氢化相表面的电子态。在清洁表面上测得的空电子态位于价带顶以上0.7eV处,而占有电子态则在价带顶以下0.25,8.4和近12eV处。在双氢化相表面上还观测到处于价带顶以下两个诱导表面态。 关键词：     

N重旋转对称的二维准晶电子态与声子态的简并性

通过相似变化矩阵,对具有N重旋转对称的二维准晶系统的哈密顿量和动力学矩阵进行对角约化。当N为偶数时,电子态与声子态中有(N-2)/(N+2)是双重简并,而4/(N+2)是非简并;当N为奇数时,电子态与声子态中有(N-1)/(N+1)是双重简并,而2/(N+1)是非简并。利用群论方法得到相同的结论。 关键词：     

高压下高温超导材料YBa2Cu3O7的电子结构

 本文选用拟合能带的Harrison参数构造紧束缚哈密顿矩阵，采取Recursion方法计算了YBa₂Cu₃O₇晶体在常压下与9 GPa高压下（此时晶格常数压缩3%）的电子结构。讨论了高压对于电子结构的影响。给出了高压下费米面移动，能带展宽和各晶位原子价变化的定量结果。     

Detection of Fe 3d electronic states in the valence band and magnetic properties of Fe-doped ZnO film

Fe-doped ZnO film has been grown by laser molecular beam epitaxy(L-MBE) and structurally characterized by X-ray diffraction(XRD) and scanning electron microscopy(SEM),all of which reveal the high quality of the film.No secondary phase was detected.Resonant photoemission spectroscopy(RPES) with photon energies around the Fe 2p-3d absorption edge is performed to detect the electronic structure in the valence band.A strong resonant effect at a photon energy of 710 eV is observed.Fe3+ is the only valence state of Fe ions in the film and the Fe 3d electronic states are concentrated at binding energies of about 3.8 eV and 7 eV～8 eV.There are no electronic states related to Fe near the Fermi level.Magnetic measurements reveal a typical superparamagnetic property at room temperature.The absence of electronic states related to Fe near the Fermi level and the high quality of the film,with few defects,provide little support to ferromagnetism.     

Curved surface effect and emission on silicon nanostructures

The curved surface （CS） effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience （PL）, such as LN, LNO, Lo1, and Lo2 lines in PL spectra due to Si-N, Si-NO, Si=O, and Si-O-Si bonds on curved surface, respectively. Si-Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the Lyb line of electroluminescence （EL） emission.     

Pt/Cu（001）-p（2×2）-O表面吸附结构的总能计算

采用密度泛函理论（DFT）研究了氧吸附后Pt/Cu（001）表面合金的原子结构和表面性质.计算结果表明,在Pt/Cu（001）-p（2×2）-O表面最稳定结构中,衬底表面原子层不发生再构,氧原子吸附于4重对称的Pt原子谷位,每个氧原子吸附能约为2.303 eV.吸附结构的Cu—O和Pt—O键键长分别为0.202和0.298 nm,氧原子的吸附高度ZCu—O约为0.092 nm.吸附前后Pt/Cu（001）-1ML（monolayer）表面合金的表面功函数分别为4.678和5.355 eV.吸附表面氧原子和衬底的结合主要来自氧原子2p轨道和衬底金属原子d轨道的杂化作用,氧原子吸附形成的表面电子态主要位于费米能级以下约-2.7 eV处.     

固体表面的空电子态及其探测方法

本文介绍了固体表面空电子态研究的一些重要进展。着重阐述了用反光电子谱、总电流谱和扫描隧道电流谱等实验手段对空态进行探测，并举例说明它们在空态研究中所得到的一些最新结果。