磁随机存储器中垂直电流驱动的磁性隧道结自由层的磁化翻转

在基于磁性隧道结(Magnetic Tunneling Junction，MTJ)的磁随机存储器(Magnetoresistantive Random Access Memory，MRAM)中利用通过MTJ的垂直电流，实现信息写入的新方法，同时给出了基于此新方法的一种新的MRAM结构和驱动原理图，并分析了它的读和写操作的可行性具体过程. 关键词： 垂直电流 磁性隧道结 磁随机存储器     

轻负荷磁头的动态频率响应

本文采用修正Ｒｅｇｎｏｌｄｓ方程 估为亚微米级飞行高度条件下磁头滑块的润滑方程，采用摄动法分析研究了用于计算机磁记录方面的气体润滑轴承滑块的动态频率响应。     

Photon—Storage in Optical Memory Cells Based on a Semiconductor Quantum Dot—Quantum Well Hybrid Structure

We report a new type of photonic memory cell based on a semiconductor quantum dot (QD)--quantum well (QW) hybrid structure, in which photo-generated excitons can be decomposed into separated electrons and holes, and stored in QW and QDs respectively. Storage and retrieval of photonic signals are verified by time-resolved photoluminescence experiments. A storage time in excess of l00ms has been obtained at a temperature of 10K while the switching speed reaches the order of ten megahertz.     

精密数字式STC衰减组件的设计

主要介绍了某型号雷达接收前端中精密数字式STC衰减组件的设计。其优点是具有数字式可编程、精度高、曲线误差小。     

基于Si掺杂Sb2Te3薄膜的相变存储器研究

采用磁控三靶(Si,Sb及Te)共溅射法制备了Si掺杂Sb2Te3薄膜,作为对比,制备了Ge2Sb2Te5和Sb2Te3薄膜,并且采用微加工工艺制备了单元尺寸为10μm×1Oμm的存储器件原型来研究器件性能.研究表明,Si掺杂提高了Sb2Te3薄膜的晶化温度以及薄膜的晶态和非晶态电阻率,使得其非晶态与晶态电阻率之比达到106,提高了器件的电阻开/关比;同Ge2Sb2Te5薄膜相比,16at%Si掺杂Sb2Te3薄膜具有较低的熔点和更高的晶态电阻率,这有利于降低器件的RESET电流.研究还表明,采用16at%Si掺杂Sb2Te3薄膜作为存储介质的存储器器件原型具有记忆开关特性,可以在脉高3V、脉宽500 ns的电脉冲下实现SET操作,在脉高4 V、脉宽20 ns的电脉冲下实现RESET操作,并能实现反复写/擦,而采用Ge2Sb2Te5薄膜的相同结构的器件不能实现RESET操作.     

TixSb2Te Thin Films for Phase Change Memory Applications

Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atom force microcopy. Resistance-temperature measurements are carried out to reveal the enhanced crystallization temperature of TixSb2 Te films, indicating a better thermal stability in such films. Both the activation energy and the temperature for 10 y data retention increase with increasing the concentration of Ti. It indicates that the crystallization of the amorphous Sb2 Te film could be suppressed by the introduction of Ti. The improvement of crystallization temperature and the thermal stability of the amorphous Sb2 Te film results from the introduction of Ti in Sb- Te bond that decreases the binding energy of Sb 4d and Te 4d.     

脉冲激光沉积制备非晶La0.75Sr0.25MnO3薄膜用于半透明阻变存储器

用脉冲激光沉积方法制备非晶La_0.75Sr_0.25MnO₃（a-LSMO）薄膜作为阻变器件（Ag/a-LSMO/ITO）的中间层,所得器件具有良好的非易失性和双极阻变行为。ITO衬底及超薄a-LSMO薄膜具有很高的可见光透过率,从而可制备半透明阻变器件。通过高分辨透射电镜直接观测到了在银电极与ITO电极间的银导电细丝。器件的阻变特性归因于在非晶镧锶锰氧层中的银导电细丝的生长与断裂。     

Heat equation with memory in anisotropic and non-homogeneous media

A modified Fourier’s law in an anisotropic and non-homogeneous media results in a heat equation with memory, for which the memory kernel is matrix-valued and spatially dependent. Different conditions on the memory kernel lead to the equation being either a parabolic type or a hyperbolic type. Well-posedness of such a heat equation is established under some general and reasonable conditions. It is shown that the propagation speed for heat pulses could be either infinite or finite, depending on the different types of the memory kernels. Our analysis indicates that, in the framework of linear theory, heat equation with hyperbolic kernel is a more realistic model for the heat conduction, which might be of some interest in physics.     

采用自泵浦相位共轭镜的光学关联存储器

本文报道了一种采用自泵浦相位共轭镜作为取阈,反馈器件的光学关联存储系统,该系统采用He-Ne激光作为光源,可实现实时处理.当输入信息仅为存储信息的25%时,得到了正确的输出.