Evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistors by structure function method＊

The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.     

Transport in graphene nanostructures

Graphene nanostructures are promising candidates for future nanoelectronics and solid-state quantum information technology. In this review we provide an overview of a number of electron transport experiments on etched graphene nanostructures. We briefly revisit the electronic properties and the transport characteristics of bulk, i.e., two-dimensional graphene. The fabrication techniques for making graphene nanostructures such as nanoribbons, single electron transistors and quantum dots, mainly based on a dry etching ??paper-cutting?? technique are discussed in detail. The limitations of the current fabrication technology are discussed when we outline the quantum transport properties of the nanostructured devices. In particular we focus here on transport through graphene nanoribbons and constrictions, single electron transistors as well as on graphene quantum dots including double quantum dots. These quasi-one-dimensional (nanoribbons) and quasi-zero-dimensional (quantum dots) graphene nanostructures show a clear route of how to overcome the gapless nature of graphene allowing the confinement of individual carriers and their control by lateral graphene gates and charge detectors. In particular, we emphasize that graphene quantum dots and double quantum dots are very promising systems for spin-based solid state quantum computation, since they are believed to have exceptionally long spin coherence times due to weak spin-orbit coupling and weak hyperfine interaction in graphene.     

High-power diode-end-pumped Tm：YAP and Tm：YLF slab lasers

Diode-end-pumped continuous-wave(CW) Tm:YAP and Tm:YLF slab lasers are demonstrated. The a-cut Tm:YAP and Tm:YLF slabs with doping concentrations of 4 at.-% and 3.5 at.-%,respectively,are pumped by fast-axis collimated laser diodes at room temperature. The maximum CW output powers of 72 and 50.2 W are obtained from Tm:YAP and Tm:YLF,respectively,while the pump power is 220 W,corresponding to the slope efficiencies of 37.9% and 26.6%,respectively.     

Studies on the mechanisms of powerful terahertz radiations from laser plasmas

A survey on the mechanisms of powerful terahertz (THz) radiation from laser plasmas is presented.Firstly,an analytical model is described,showing that a transverse net current formed in a plasma can be converted into THz radiations at the plasma oscillation frequency.This theory is applied to explain THz generation in a gas driven by two-color laser pulses.It is also applied to THz generation in a tenuous plasma driven by a chirped laser pulse,a few-cycle laser pulse,a DC/AC bias electric field.These are well verified by particle-in-cell simulations,demonstrating that THz radiations produced in these approaches are nearly single-cycles and linear polarized.In the chirped laser scheme and the few-cycle laser scheme,THz radiations with the peak field strength of tens of MV/cm and the peak power of gigawatt can be achieved with the incident laser intensity less than 10 17 W/cm 2.     

Design and analysis of a novel tunable optical power splitter

A novel tunable optical power splitter,with a Y-branch waveguide based on the total internal reflection and a microprism with tunable index refraction,is presented.Numerical simulation of its optical performance shows that a high dynamic range,low optical loss,and relatively low wavelength-dependence can be achieved.This component offers numerous advantages such as ease for fabrication,low cost,and compact size,which are very useful for potential application in integrated optical devices.     

Scintillation reduction using multi-beam propagating technique in atmospheric WOCDMA system

We propose employing multi-beam propagating technology to mitigate the influence of atmospheric scintillation to the wireless optical code division multiple access (WOCDMA) system and then deduce the bit error rate (BER) formulas of systems in weak and strong scintillations,respectively.According to simulation experiment results,multi-beam propagation can improve the system performance very well compared with single-beam propagating technique.Moreover,the more beams we use,the better the performance we get.When the received optical power is-30 dBm,the BER of the system employing four beams is 5 and 1 dB lower than that of using single-beam propagating technique in weak and strong scintillations,respectively.     

CuI/Al双层电极的有机场效应晶体管

制备了CuI/Al为源极和漏电极的并五苯基场效应晶体管.相对于纯金属(Al, Au)电极的晶体管,所研制的晶体管的迁移率、阈值电压VT、开关电流比I_on/I_off等参数都有明显改善.研究发现,在Al电极与并五苯半导体之间引入CuI作为空穴注入层,能够明显降低Al电极与并五苯之间的空穴注入势垒.紫外-可见光谱和X射线光电子能谱数据表明,这种空穴注入势垒的降低源自并五苯和Al向CuI的电子转移. 关键词： 有机场效应晶体管 CuI/Al双层源漏电极 电子转移     

一种考虑IGBT基区载流子注入条件的物理模型

提出了一种考虑绝缘栅极双极晶体管(insulated gate bipolar transistor,IGBT) 基区载流子不同注入条件的物理模型. 在小注入和大注入情况下,分别建立描述IGBT基区载流子运动的输运方程(ambipolar transport equation,ATE),并确定边界条件. 采用傅里叶级数法求解载流子输运方程,并将计算结果分别与IGBT手册提供的实验数据和Hefner模型计算结果相比较,验证了本文提出物理模型的正确性. 关键词： 绝缘栅极双极晶体管 物理模型 注入条件 双极输运方程     

p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究

对一种非加固4007电路中p型金属氧化物半导体场效应晶体管(PMOSFET)在不同剂量率条件下的电离辐射损伤效应及高剂量率辐照后的退火效应进行了研究. 通过测量不同剂量率条件下PMOSFET的亚阈I-V特性曲线,得到阈值电压漂移量随累积剂量、退火时间的变化关系. 实验发现,此种型号的PMOSFET具有低剂量率辐射损伤增强效应. 通过描述H⁺在氧化层中的输运过程,解释了界面态的形成原因,初步探讨了非加固4007电路中PMOSFET低剂量率辐射损伤增强效应模型. 关键词： p型金属氧化物半导体场效应晶体管 60Co γ射线')" href="#">⁶⁰Co γ射线 电离辐射损伤 低剂量率辐射损伤增强效应     

电介质表面纵向射频电场对次级电子倍增效应的影响

基于次级电子倍增动力学模型和次级电子发射曲线,运用蒙特卡罗方法模拟电介质表面具有纵向射频电场作用下的单边次级电子倍增现象,研究次级电子倍增的表面电场敏感曲线和时间演化图像. 以一个S波段射频介质窗为例,计算次级电子在其介质表面的沉积功率. 结果表明,纵向射频电场可能加剧电介质表面的次级电子倍增效应,易于导致介质片破裂,不利于高频能量传输. 关键词： 纵向射频场 次级电子倍增效应 蒙特卡罗方法 功率沉积