Intrinsic Decoherence of a Two-Atom System with Dipole--Dipole

We investigate the effect of dipole-dipole interaction on the intrinsic decoherence of a system which consists of two two-level atoms and an optical cavity. The entanglement of the system is calculated by making use of concurrence. Our results show that the appropriate choice for the coupling constant Ω of dipole-dipole interaction can restrain the intrinsic deeoherenee of the system. We also find a special phenomenon. No matter what the value of γ is, the concurrence of system slowly increases and cannot exceed 0.71 when Ω= 1.     

Time-Dependent Variational Approach to Ground-State Phase Transition and Phonon Dispersion Relation of the Quantum Double-Well Model

The ground-state phase transition and the phonon dispersion relation of the quantum double-well model are studied by means of the time-dependent variational approach combined with a Hartree-type many-body trial wavefunction. The single-particle state is taken to be a frozen Jackiw-Kerman wavefunction. Under the condition of minimum uncertainty relation, we obtain an effective classical Hamiltonian for the system and equations of motion for the particle＇s expectation values. It is shown that the effective substrate potential transits from a symmetric double-well potential to a symmetric single-well potential, and the ground state exhibits a transition from a broken symmetry phase to a restored symmetry phase as increasing the strength of quantum fluctuations. We also obtain the phonon dispersion relations and the phonon gaps at the two phases.     

Difference of Oxide Hetero-structure Junctions with Semiconductor Electronic Devices

Charge carrier injection is performed in Pr0.7Ca0.3MnO3 （PCMO） hetero-structure junctions, exhibiting the stability without electric fields and dramatic changes in both resistance and interface barriers, which are entirely different from behaviour of semiconductor devices. The disappearance and reversion of interface barriers suggest that the adjustable resistance switching of such hetero-strueture oxide devices should associate with motion of charge carriers across interfaces. The results suggest that injected carriers should be still staying in devices and result in changes of properties, which lead to a carrier self-trapping and releasing picture in a strongly correlated electronic framework. Observations in PCMO and oxygen deficient CeO2-δ devices show that oxides as functional materials could be used in mieroeleetronics with some novel properties, in which the interface is very important.     

Relationship of Polaron Exchange with Ferromagnetic and Insulator--Metal Transitions in Doped Manganites

We report the experiment results and data analyses based on a polaron exchange model for La0.7Ca0.3MnO3 and Pr0.7（Sr1-xCax）0.3MnO3 epitaxial thin films. In the polaron exchange model with an energy balance condition, critical temperature of Tc for stable ferromagnetic （FM） ordering should depend on △E as kBTc = E0 exp（-△E/kBTc）, where A E denotes the potential barrier for the exchange polarons to overcome. Using the small polaron hopping model, the resistivity peak temperature Tp is a function of the hopping energy Ehop. The dependence of Tp on Ehop is similar to the dependence of Tc on AE, which reveals that the polaron exchange relates to FM and insulator-metal transitions. The result indicates that the polaron exchange model is a simple way for describing the FM ordering, and is very helpful for understanding of complex doped manganites.     

宽带波束形成器的设计与实现

综述了宽带波束形成器的设计与实现问题,归纳出一种统一的窄带(子带)波束优化设计方法──多约束优化设计法,并推广为FIR宽带波束形成器统一优化设计法.阐述了频域DFT宽带波束形成器结构及其子带波束加权向量设计方法,以及时域FIR宽带波束形成器结构及其各通道FIR滤波器的设计方法,对几种具有代表性的方法的原理与性能进行了分析与比较.所归纳出的统一设计法将很多现有的波束设计法纳入统一框架体系,使之成为它的一个特例,可以满足多样化频域子带与时域宽带波束形成器设计的需求,提供灵活的波束设计准则,且设计精度高.子带与FIR宽带多约束统一设计法的优越性能在稳健旁瓣控制恒定主瓣响应自适应波束形成器设计问题中得到了充分的体现.     

对高频声子的探测

晶体中的原子在其平衡点附近的摇晃会产生振动波,即声子．声子能在固体中传播声、热能和其他形式的能量,测量声子的性质可以提供有关晶体的结构以及原子间相互作用的各种信息．声子的性质一般是利用与光子的声一光相互作用来测定的．但当声波的波长小到只有原子间距的大小时,就很难利用声一光作用来探测声子了．因此,尽管有许多科学家都认为,在固体中已激发出了高频声子,但却无法用直接或间接的方法来精确地测定它们．     

精确计算在π~0重整化链图传播下p→p′微分截面

本文采用中性介子π0与核子N-反核子U-强相互作用的Lorentz不变耦合模型,对质子反质子在中性介子π0重整化链图传播下的散射微分截面,作了严格解析计算后获得了"精确"理论结果;进而,又对该计算结果与π0树图传播下的微分截面作了对比分析,获得了相关辐射修正的重要结果.这对于深入研究质子摊贩质子在高、中、低能区中的弹性碰撞及其描述强相互作用的Lorentz不变耦合模型理论,都将提供某些值得借鉴与参考的理论研究价值.     

高能重离子碰撞实验中的软物理研究现状

高能重离子碰撞实验中的软物理研究能够帮助我们清楚认识系统的集体演化过程,并且有助于理解碰撞产生的热密系统的性质.本文介绍了高能重离子碰撞实验中软物理的研究现状及其新近取得的实验成果,包括七部分内容:1)高能重离子碰撞简介;2)碰撞几何方面的研究现状;3)粒子产生方面的研究现状;4)关联与起伏方面的研究现状;5)集体膨胀方面的研究现状;6)强子化方面的研究现状,7)LHC/ALICE实验上的软物理预期.最后,本文对高能重离子碰撞实验中的软物理研究现状进行总结.     

反射型导模共振滤波器设计

导模共振滤波器由于其高峰值反射率,低旁带反射,窄带以及带宽可控等优良特性引起了人们极大的关注,采用亚波长光栅的导模共振效应可以实现传统基于高低折射率介质的多层膜滤波器所无法实现的特殊功能,在弱调制模式下,其共振带宽可以被压缩到零点几纳米,但是由于介质表面和空气层的菲涅耳反射,使得偏离或者远离共振区时的反射率偏高,根据等效介质理论,亚波长光栅在远离共振区可以被看为均匀的薄膜,本文通过对导模共振光栅进行单层、双层以及三层抗反射设计,有效的降低了导模共振光栅的旁带反射率,从而在可见光波段获得了性能优良的共振滤波 关键词： 导模共振 平面波导 傅里叶模式理论 窄带滤波     

用外磁场控制电流感应磁化翻转效应中的临界电流方法

应用基于磁动力学方程的宏观唯象模型,研究了弱外磁场下纳米尺度赝自旋阀结构的电流感应磁化翻转效应.在统一考虑铁磁/非磁界面的自旋相关散射以及铁磁层中的自旋积累和弛豫过程后,给出了赝自旋阀结构在弱外磁场下的磁化翻转条件和临界电流.对该效应的数值计算解释了弱外磁场下赝自旋阀结构的电阻-电流回线的偏移,并给出了用外磁场控制电流感应磁化翻转效应中的临界电流方法. 关键词： 电流感应磁化翻转 外磁场 临界电流 赝自旋阀