缺陷金属有机骨架的制备及其去除水中污染物的研究进展

在避免母体结构坍塌的前提下,通过缺陷工程对金属有机骨架(MOFs)进行处理可有效提升其去除水体污染物的性能。目前,通过调整合成条件(温度、金属/配体比例等)、添加调制剂、热处理和金属节点取代等方式可制备缺陷MOFs。粉末X射线衍射(PXRD)、比表面积分析、热重-差热分析(TGA-DSC)、电子顺磁共振(EPR)、X射线光电子能谱(XPS)、高分辨率透射电子显微镜(HR-TEM)、球差校正透射电镜(AC-TEM)和X射线吸收光谱(XAS)表征技术可证实MOFs中缺陷的特征。相比原始MOFs,从光催化等高级氧化的角度来看,构造缺陷型MOFs可促进电子转移、减小带隙以提升其高级氧化降解去除污染物的性能。此外,缺陷型MOFs还可为污染物提供更多吸附位点,进一步提升吸附剂的吸附容量和吸附速率。本文系统总结缺陷MOFs的制备方法、现有常见表征技术及其在水处理领域中的应用。同时,本文还根据缺陷MOFs用于去除水中污染物的研究现状对其今后发展予以展望。     

纳米孔缺陷导致单层黑磷电荷局域极大抑制非辐射电子-空穴复合的时域模拟

通常认为缺陷加速黑磷的非辐射电子-空穴复合,阻碍器件性能的持续提高。实验打破了这一认识。采用含时密度泛函理论结合非绝热分子动力学,我们发现P-P伸缩振动驱动非辐射电子-空穴复合,使纳米孔修饰的单层黑磷的激发态寿命比完美体系延长了约5.5倍。这主要归因于三个因素。一,纳米孔结构不但没有在禁带中引入深能级缺陷,而且由于价带顶下移使带隙增加了0.22 eV。二,除了带隙增加,纳米孔减小了电子和空穴波函数重叠,并抑制了原子核热运动,从而使非绝热耦合降低至完美体系的约1/2。三,退相干时间比完美体系延长了1.5倍。前两个因素战胜了第三个因素,使纳米孔结构激发态寿命延长至2.74 ns,而其在完美体系中约为480 ps。我们的研究表明可以制造合理数量和形貌的缺陷,如纳米孔,降低黑磷非辐射电子-空穴复合,提高光电器件效率。这一研究对于理解和调控黑磷和其它二维材料的激发态性质有重要意义。     

Surface domain potential difference-mediated efficient charge separation on a defective ZnIn2S4 microsphere photocatalyst

Low-efficiency charge separation in metal sulfides is a major obstacle to realizing high photocatalytic performance. Herein, we propose the concept of a similar surface domain potential difference between adjacent microdomains with and without surface S vacancies on ZnIn₂S₄ to mediate charge separation. Defective ZnIn₂S₄ microspheres (DZISNPs) are prepared through a solvothermal method combined with a low-temperature hydrogenation surface engineering strategy. The as-prepared DZISNPs with a narrowed bandgap of 2.38 eV possess a large specific surface area of 178.5 m² g^?1, a pore size of 6.89 nm, and a pore volume of 0.36 cm³ g^?1, which further improves the visible light absorption. The resultant DZISNPs exhibit excellent visible light activity (2.15 mmol h^?1 g^?1), which is ～two-fold higher than that of the original DZISNP. The experimental results and DFT calculations reveal that the enhanced property can be a result of the surface S vacancy-induced surface domain potential difference, promoting the spatial separation of electrons and holes. Furthermore, the long-term stability of the DZISNPs indicates that the formation of surface S vacancies can inhibit the photocorrosion of ZnIn₂S₄. This strategy provides new insights for fabricating highly efficient and stable sulfide photocatalysts.     

Defect Engineering and Anisotropic Modulation of Ionic Transport in Perovskite Solid Electrolyte LixLa(1−x)/3NbO3

Solid electrolytes, such as perovskite Li_3xLa_2/1−xTiO₃, Li_xLa_(1−x)/3NbO₃ and garnet Li₇La₃Zr₂O₁₂ ceramic oxides, have attracted extensive attention in lithium-ion battery research due to their good chemical stability and the improvability of their ionic conductivity with great potential in solid electrolyte battery applications. These solid oxides eliminate safety issues and cycling instability, which are common challenges in the current commercial lithium-ion batteries based on organic liquid electrolytes. However, in practical applications, structural disorders such as point defects and grain boundaries play a dominating role in the ionic transport of these solid electrolytes, where defect engineering to tailor or improve the ionic conductive property is still seldom reported. Here, we demonstrate a defect engineering approach to alter the ionic conductive channels in Li_xLa_(1−x)/3NbO₃ (x = 0.1~0.13) electrolytes based on the rearrangements of La sites through a quenching process. The changes in the occupancy and interstitial defects of La ions lead to anisotropic modulation of ionic conductivity with the increase in quenching temperatures. Our trial in this work on the defect engineering of quenched electrolytes will offer opportunities to optimize ionic conductivity and benefit the solid electrolyte battery applications.     

一维相位缺陷量子行走的共振传输

从分立时间量子行走理论出发, 分别在包含两个格点相位缺陷和一段格点相位缺陷(方相位势)的一维格点线上研究量子行走的静态共振传输. 利用系统独特的色散关系和边界点上的能量守恒条件, 获得量子行走通过缺陷区域的透射率, 讨论了相位缺陷的强度和宽度不同时透射率随入射动量的变化行为. 在相位缺陷强度π/2两侧, 透射率表现出不同的共振特性, 并给出了强缺陷强度下共振峰和缺陷宽度的关系.     

First‐principles identification of defect levels in Er‐doped GaN

Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first‐principles hybrid density functional study of the structure, energetics, and thermodynamic transition levels of Er‐related defect complexes in GaN. We discover for the first time that Er_Ga–C_N–V_N, a defect complex of Er, a C impurity, and an N vacancy, and Er_Ga–O_N–V_N, a complex of Er, an O impurity, and an N vacancy, form defect levels at 0.18 eV and 0.46 eV below the conduction band, respectively. Together with Er_Ga–V_N, a complex of Er and an N vacancy which has recently been found to produce a donor level at 0.61 eV, these defect complexes provide explanation for the Er‐related defect levels observed in experiments. The role of these defects in optical excitation of the luminescent Er center is also discussed.     

结晶氮化碳的制备与改性策略

石墨相氮化碳(g-C_3N_4)是最具代表性的二维有机聚合物半导体材料,其具有可见光响应性能、稳定化学结构和优良的生物相容性等优点,在环境和能源领域有非常广阔的应用前景。但是,普通g-C_3N_4材料的热聚合不完全,其体相和表面的缺陷多,因此光生载流子易复合,光催化活性不高。近年来,高活性结晶氮化碳(CCN)的研究得到了国内外学者的广泛关注。本文总结了目前CCN制备及其改性方法:5种代表性制备方法,包括传统熔盐法、预热熔盐法、固态盐法、溶剂法和质子化法;4种代表性CCN的改性方法,包括缺陷引入、形貌控制、单原子修饰和材料复合。文章重点介绍了 CCN制备原理、结构特征与光催化性能。最后,对CCN的制备与改性方法进行了评价,并对其研究方向进行了展望。     

Local strain and defects in silicon wafers due to nanoindentation revealed by full‐field X‐ray microdiffraction imaging

Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full‐field X‐ray microdiffraction imaging using synchrotron radiation is employed to investigate the long‐range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.