二维电子波导/量子点结构中第二激发态对Fano共振的影响

本文用解析理论研究电子波导管/量子点系统中Fano共振透射问题.在第一能量窗口中考虑高激发态影响,发现共振透射率和峰位基本保持不变,但是远离共振区的透射率明显低于只考虑第一激发态的情况.在第二能量窗口中,入射波有两个本征模,两个入射模产生的Fano共振基本在同一个位置.每一个入射本征模都可激发起两个传播模,其中的Fano共振是由与入射模波矢一致的传播模产生的.外电势会以线性关系影响共振峰位.     

耦合Majorana束缚态T形双量子点中的Andreev反射

研究了连接在正常金属电极和超导电极之间的耦合Majorana束缚态(MBSs)T形双量子点结构中的Andreev反射.研究发现,对于T形双量子点结构,当入射能量等于边耦合量子点能级时Andreev反射电导出现Fano振荡,连接MBSs之后,零费米能附近出现一对新的Fano型振荡峰.如果忽略两个MBSs之间的相互作用,零费米能点的Andreev反射电导为定值1/2G_0(G_0=2e~2/h),不受量子点能级、双量子点之间耦合强度以及量子点与MBSs之间的耦合强度的影响.此外,在没有耦合MBSs的T形双量子点结构中,调节双量子点间的耦合强度可以使零费米能附近的Andreev反射电导出现由共振带向反共振带的转变,而耦合MBSs之后,又可以使反共振消失转而出现新的共振峰.     

海森堡J1-J2自旋链的量子关联与量子纠缠

文章计算了海森堡J1-J2自旋链的任意两格点间的量子失谐与相对熵纠缠,不仅给出了量子失谐、相对熵纠缠与两格点自旋关联函数的解析关系,而且给出了精确对角化的数值结果.解析结果指出了两格点的量子失谐与纠缠非零的条件,并为用两格点的量子失谐与纠缠探测该模型的相变点提供了理论依据.数值结果表明,在该模型中,量子失谐比纠缠具有较长程的关联,近邻和远距离两格点间的量子失谐在基态时能标度一级相变点J2/J1 =0.5,在第一激发态时,除了能标度相变点J2/J1=0.5外,还能标度无穷级相变点J2/J1 =0.241 1;而纠缠仅存在最近邻与次近邻两格点间,且只有最近邻两格点的纠缠能标度相变点.     

P(o)schl-Teller势阱中非局域效应对透射光谱的影响

在考虑半导体量子阱中导带电子对外加激光场非局域光学响应的情况下,利用格林函数方法推导出了光透射率的解析表达式,并以典型的GaAs/AlGaAs为材料的P(o)schl-Teller量子势阱为例进行数值计算.计算结果表明,由于电子对激光场的非局域光学响应,半导体量子阱的透射光谱的谱线在共振峰附近出现明显地蓝移,蓝移的大小与量子阱宽度有紧密的联系.在有效的纳米尺度范围内,半导体量子阱越宽,透射谱线的蓝移也就越大.另外,光场强度和量子阱结构参数等因素对透射光谱的影响也被澄清.     

一维量子散射问题的“倒算法”

提出了一维量子散射数值计算的"倒算法",假定透射一侧只有透射波,从透射一侧向入射一侧按初值问题求解薛定谔方程,得到波函数的实部与虚部,进而求出入射一侧的概率密度函数,求出该函数的极大值和极小值,就可以算出透射率和反射率,使一维量子散射的计算简洁明了.用此法研究了散射过程中量子相位的变化,发现在透明点反射波相位有π的跃变.     

相位噪声诱发神经放电的单次或两次相干共振

神经元电活动可以从静息通过Hopf分岔到放电,放电频率有固定周期;也可以从静息通过鞍-结分岔到放电,放电频率接近零.在具有周期性的相位噪声作用下的Hopf分岔和鞍-结分岔点附近,都会产生相干共振.噪声的周期小于Hopf分岔点附近的放电的周期时,相位噪声可以引起神经系统产生一次相干共振,位于系统内在的固有频率附近;噪声的周期大于系统的固有周期时,相位噪声可以引起双共振,对应低噪声强度的共振产生在噪声频率附近,对应高噪声强度的共振产生在系统的固有频率附近;并对双共振的产生原因进行了解释.在鞍-结分岔点附近,无论噪声的周期是大是小,都只会引起一次共振,研究结果不仅揭示了相位噪声作用下平衡点分岔点相干共振的动力学特性和对应于两类分岔的两类神经兴奋性的差别,还对近期的相位噪声诱发产生单或双共振的不同研究结果给出了解释.     

T型耦合双量子点系统的非对等Kondo共振分裂传输

利用隶玻色子平均场近似理论,并借助于单杂质的Anderson模型的哈密顿量,研究了T型耦合双量子点嵌入正常电极的基态输运性质.结果表明：在体系处于平衡状态时,随着双量子点的耦合强度增加,体系的Kondo 效应被削弱. 当耦合强度足够强时,Kondo量子点态密度的Kondo共振单峰分裂成两个不对等的Kondo共振双峰.在体系处于非平衡状态时,增加两电极的偏压,态密度的Kondo分裂的非对等性明显加强. 关键词： Kondo效应 态密度 格林函数法 耦合双量子点     

时间抖动对相位编码量子密钥分发系统量子误码率的影响

就时间抖动对相位编码量子密钥分发(QKD)系统量子误码率(QBER)的影响进行了系统的分析,建立了相位编码QKD系统量子误码率和时间抖动关系的物理模型,给出了单光子脉冲的一般波形函数和量子误码率之间的关系.针对高斯脉冲分布,导出了时间抖动引起的相位编码QKD系统的量子误码率与脉冲宽度和时间抖动分布参数之间的定量关系.得...     

T型双量子点分子Aharonov-Bohm干涉仪的电输运

利用非平衡格林函数方法, 理论研究T型双量子点分子Aharonov-Bohm (A-B)干涉仪的电荷及其自旋输运性质. 通过控制T型双量子点分子内量子点间有无耦合, 能够实现在同一电子能级位置处分别出现共振和反共振状态, 根据此性质, 能将体系设计成量子开关器件. 当将两个完全相同的T型双量子点分子分别嵌入A-B干涉仪两臂中时, 磁通取适当数值, 能够出现完全的量子相消干涉. 通过调节量子点能级、左右两电极间的偏压和Rashba自旋轨道相互作用强度, 可对体系自旋流进行调控. 关键词： 非平衡格林函数 T型双量子点分子 Aharonov-Bohm干涉仪 自旋输运     

串型耦合双量子点之间库仑作用对其近藤共振的影响

从理论上研究了串型耦合双量子点之间库仑作用对其近藤共振的影响. 采用非平衡态格林函数和奴役玻色子平均场近似方法求解了系统的哈密顿量; 计算了系统电子的态密度、透射率、占居数和近藤温度随双量子点之间库仑作用能的变化, 同时也计算了电极处于极化时双量子点之间库仑作用能对系统电子态密度的影响. 结果表明,双量子点之间库仑作用能够极大地影响系统的基态物理性质. 同时还对相关的物理问题进行了讨论.     

Note on Resonant and Non-resonant Peaks in Electron-Atom Total Scattering Cross Sections

Certain broad low-energy peaks caused by a single partial wave in total cross sections are explained in terms of phase shifts. Such peaks have been associated with the real part of a Regge pole trajectory, having a maximum near an integer value of the angular momentum quantum number. At the peak energies, the pertinent partial-wave phase shift was shown to have a local maximum near a value π/2 modulo π. This implies no time delay in the semiclassical context. The phenomenon is a quantum effect, lacking a semiclassical interpretation.     

Inter-Well Coupling and Resonant Tunneling Modes of MultipleGraphene Quantum Wells

We investigate the inter-well coupling of multiple graphene quantum well structures consisting of graphene superlattices with different periodic potentials. The general form of the eigenlevel equation for the bound states of the quantum well is expressed in terms of the transfer matrix elements. It is found that the electronic transmission exhibits resonant tunneling peaks at the eigenlevels of the bound states and shifts to the higher energy with increasing the incident angle. If there are N coupled quantum wells, the resonant modes have N-fold splitting. The peaks of resonant tunneling can be controlled by modulating the graphene barriers.     

Tunneling in double-barrier ZnSe/ZnTe structures — time-dependent analysis

Wave-packet time-dependent quantum mechanics is used to calculate the tunneling probability through a double-barrier ZnSe/ZnTe structure. The time-dependent transmission characteristics are obtained for several structures, and detailed electron dynamics is presented. The resonant peaks due to the presence of the discrete energy levels in the quantum well as well as in the barrier region are observed.     

电子横向运动对共振隧穿的影响

讨论了电子横纵方向运动耦合时的隧穿现象,对CdSe/Zn1-xCdxSe方形双势垒结构和抛物形双势垒结构的数值计算表明,在零偏压和非零偏压情况下,电子横向运动对共振隧穿的影响是不容忽略的。     

Fano-type spin-flip mesoscopic transport through an Aharonov-Bohm interferometer

We have investigated the mesoscopic transport properties of a quantum dot embedded Aharonov-Bohm (AB) interferometer applied with a rotating magnetic field. The spin-flip effect is induced by the rotating magnetic field, and the tunneling current is sensitive to the spin-flip effect. The spin-flipped electrons tunneling from the direct channel and the resonant channel interfere with each other to form spin-polarized tunneling current components. The non-resonant tunneling (direct transmission) strength and the AB phase φ play important roles. When the non-resonant tunneling (background transmission) exists, the spin and charge currents form asymmetric peaks and valleys, which exhibit Fano-type line shapes by varying the source-drain bias voltage, or gate voltage. The AB oscillations of the spin and charge currents exhibit distinct dependence on the magnetic flux and direct tunneling strength.     

含负折射率缺陷的光量子阱的透射特性及理论模拟

利用转移矩阵方法对含负折射率缺陷的一维光子晶体量子阱结构的透射特性进行了研究。结果表明,当缺陷为偶数个时,结构透射谱中有两个透射峰;当缺陷为奇数个时,透射谱中只有中心处一个透射峰,且随着缺陷层数的增加,该处峰的品质因子逐渐提高。因电磁波在缺陷处的强烈局域,所以阱中局域态的透射率对缺陷的折射率有很强的依赖作用。通过控制入射光的强度可使缺陷的折射率发生微小的改变,进而使局域态的透射率发生明显改变,这样就可制作高效光开关。     

High transmission with narrow bandwidth of metallic defect mode in 1-D dielectric photonic crystals

Enhanced transmission peaks can be obtained in a dielectric photonic crystal with metal film defect. These peaks occur only in the band gaps, and their heights decrease sharply when they deviate from the band gaps. Theoretical analysis shows that, since the metal film defect mode possesses very high density of mode, high transmission of light in particular band can be achieved even by a metal “block” while high absorption of the light in other bands still exists. The physical mechanism of this phenomenon is essentially different from the resonant tunneling effect of layered metallic films. Since metal has high reflection and strong absorption of the light wave without being enhanced, so, basing on this mechanism, a narrow bandwidth filter with high transmission in UV range and suppression in while the visible, infrared, and even microwave range can be achieved.     

The effect of an external electric field on the optical properties of a quantum molecule with a resonance D(-)-state

The average binding energy and the level width for the resonant D^(-)-state in a quantum molecule have been calculated in the presence of an external electric field. The calculations were performed in the zeroradius potential model with allowance for the tunneling decay of the resonant state. The external electric field is shown to stimulate the decay of resonant D^(-)-states under conditions of dissipative tunneling. It was found that the curve of the probability of photoionization of the D^(-)-center as a function of the external electric field strength has two peaks that are connected with a change in the symmetry of the double-well oscillator potential of the quantum molecule and with the transformation (caused by the electric field) of envelope wave functions, respectively.     

Quantum nature of proton transferring across one-dimensional potential fields

Proton transfer plays a key role in the applications of advanced energy materials as well as in the functionalities of biological systems.In this work,based on the transfer matrix method,we study the quantum effects of proton transfer in a series of one-dimensional(1 D) model potentials and numerically calculate the quantum probability of transferring across single and double barriers(wells).In the case of single barriers,when the incident energies of protons are above the barrier height,the quantum oscillations in the transmission coefficients depend on the geometric shape of the barriers.It is found that atomic resonant tunneling(ART) not only presents in the rectangular single well and rectangular double barriers as expected,but also exists in the other types of potential wells and double barriers.For hetero-structured double barriers,there is no resonant tunneling in the classical forbidden zone,i.e.,in the case when the incident energy(E_i) is lower than the barrier height(E_b).Furthermore,we have provided generalized analysis on the characteristics of transmission coefficients of hetero-structured rectangular double barriers.     

A graphene quantum dot realized by an armchair graphene nanoribbon with line defect

The electron transport in a semiconducting armchair graphene nanoribbon with line defect is theoretically investigated, by coupling it to two normal metallic leads. It is found that the line defect induces a new localized quantum state near the Dirac point, and that the coupling between this state and the leads provides a channel for the resonant tunneling. This means that such a finite‐size nanoribbon can be viewed as a quantum dot. When two line defects are present simultaneously, a coupled quantum dot forms, leading to the splitting of the conductance peaks. With these results, we propose such a structure to be a promising candidate of an electron transistor. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)