小尺寸低折射率差硅基二氧化硅阵列波导光栅

随着AWG型器件在光通信系统中的大规模应用,对低成本AWG芯片的需求越来越多。在各种降成本方案中,减小AWG芯片的尺寸是最有效的方法之一。本文介绍了一种新型小尺寸低折射率差硅基二氧化硅阵列波导光栅（AWG）的设计。在该AWG中,输入波导/输出波导与平板波导连接的部分制作成两侧为空气槽的高折射率差波导,所以在与输出平板波导连接处的相邻输出波导间距较小,这样可以在设计上缩短平板波导的长度、减少阵列波导的数量,实现较小的AWG芯片尺寸。该AWG的其它部分,如输入/输出波导与光纤耦合的部分、阵列波导光栅等均采用常规的低折射率波导工艺,所以就同时具有与常规的低折射率波导AWG相同的优点：如低耦合损耗、较好的串扰以及光学特性等。根据这个原理,设计了一种40通道100 GHz频率间隔的低折射率差硅基二氧化硅AWG,其芯片尺寸只有23.88 mm?10.5 mm,是传统相同材料制作的AWG尺寸的1/6。     

A novel high performance TFS SJ IGBT with a buried oxide layer

A novel high performance trench field stop(TFS) superjunction(SJ) insulated gate bipolar transistor(IGBT) with a buried oxide(BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT(Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop(Vce(on)) and an improved tradeoff between Vce(on)and turn-off loss(Eoff), with no breakdown voltage(BV) degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5 μm and Nn = Np = 3 × 1015cm-3, the Vce(on)and Eoffof the proposed structure are 1.08 V and 2.81 mJ/cm2with the collector doping concentration Nc = 1×1018cm-3and 1.12 V and1.73 mJ/cm2with Nc = 5 × 1017cm-3, respectively. However, with the same device parameters, the Vce(on)and Eofffor the Conv-SJ are 1.81 V and 2.88 mJ/cm2with Nc = 1 × 1018cm-3and 1.98 V and 2.82 mJ/cm2with Nc = 5 × 1017cm-3,respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.     

取代率对钢管再生混凝土短柱轴压性能退化的影响分析

为了揭示再生粗骨料含量对钢管再生混凝土短柱轴压性能退化的影响,以再生粗骨料取代率级差10%作为主要变化参数,分别进行了22组圆钢管试件(以直径90mm和110mm为次要变化参数)和11组方钢管试件的轴心受压试验,从组合轴压刚度退化、损伤以及耗能的角度分析了再生粗骨料取代率对其性能衰减的影响程度。研究结果表明:钢管再生混凝土短柱在非弹性阶段的退化特性大致表现为负指数函数的形式;再生粗骨料取代率较高时的轴压损伤累积比取代率较小的试件快;对于含钢率低、套箍系数小的圆钢管试件,其全过程耗能因子降低较快且变得较小;再生粗骨料取代率超过50%后,钢管再生混凝土的轴压终值耗能因子均随取代率的增加而降低。     

0.18 μm MOSFET器件的总剂量辐照效应

对0.18 μm metal-oxide-semiconductor field-effect-transistor (MOSFET)器件进行γ射线辐照实验,讨论分析器件辐照前后关态漏电流、阈值电压、跨导、栅电流、亚阈值斜率等特性参数的变化,研究深亚微米器件的总剂量效应. 通过在隔离氧化物中引入等效陷阱电荷,三维模拟结果与实验结果符合很好. 深亚微米器件栅氧化层对总剂量辐照不敏感,浅沟槽隔离氧化物是导致器件性能退化的主要因素. 关键词： 总剂量效应 浅沟槽隔离 氧化层陷阱正电荷 MOSFET     

A Passband-Flattened EDG Demultiplexer with an Air-Trenched Taper

A novel passband flattening method for a planar waveguide demultiplexer based on an etched diffraction grating is presented. A strongly confined taper is formed by etching air trenches at both sides of the input waveguide. The geometric parameters of the taper are optimized by considering the figure of merit, ripple, and loss. Numerical simulation for a design example is given to illustrate the passband flattening method.     

深亚微米器件沟道长度对总剂量辐照效应的影响

研究了180 nm 互补金属氧化物半导体技术下的器件沟道长度对总剂量辐照效应的影响. 在其他条件如辐照偏置、器件结构等不变的情况下, 氧化层中的陷阱电荷决定了辐照响应. 浅沟槽隔离氧化层中的陷阱电荷使得寄生的侧壁沟道反型, 从而形成大的关态泄漏电流. 这个电流与沟道长度存在一定的关系, 沟道长度越短, 泄漏电流越大. 首次发现辐照会增强这个电流的沟道长度调制效应, 从而使得器件进一步退化.     

方钢管混凝土柱延性的实验研究

针对结构抗震设计对延性的要求,对不同轴压比、长细比和混凝土标号的7根方钢管混凝土柱试件进行了低周反复加载实验,得到了框架柱的荷载位移曲线、骨架曲线以及各阶段的荷载位移值,据此分析了各种因素对方钢管混凝土柱延性的影响.实验结果表明:剪力滞引发了方钢管混凝土柱的塑性铰,塑性铰的扩展是柱端承载力下降的根本原因,增大轴压比将引起塑性铰更早出现,进而降低框架柱的延性和水平抗剪能力;增大长细比可以延缓塑性铰出现,提高柱的延性和耗能能力,但是水平抗剪能力下降;提高混凝土强度等级可以降低大轴压比、大长细比带来的不利因素.实验结果与有限元计算数据吻合良好.     

A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS

A new analytical model for the surface electric field distribution and breakdown voltage of the silicon on insulator (SOI) trench lateral double-diffused metal-oxide-semiconductor (LDMOS) is presented. Based on the two-dimensional Laplace solution and Poisson solution, the model considers the influence of structure parameters such as the doping concentration of the drift region, and the depth and width of the trench on the surface electric field. Further, a simple analytical expression of the breakdown voltage is obtained, which offers an effective way to gain an optimal high voltage. All the analytical results are in good agreement with the simulation results.     

基于双剪统一强度理论的复式钢管混凝土轴压承载力计算

考虑内、外钢管对混凝土的双重约束作用, 分析复式钢管混凝土的轴压应力状态, 采用双剪统一强度理论分析混凝土和钢管各自的极限轴压强度, 得出复式钢管混凝土轴压承载力公式; 通过推导钢管在极限状态的强度折减系数及钢管与混凝土之间的紧箍力值, 计算出的轴压承载力与试验数据进行对比, 吻合较好, 验证了双剪统一强度理论在复式钢管混凝土轴压承载力计算中的适用性; 并给出了内圆钢管的径厚比和直径与轴压承载力提高系数的关系, 为复式钢管混凝土的优化设计提供理论依据.     

Fabrication and characterization of a Cu seed layer on a 60-nm trench-patterned SiO2 substrate by a self-assembled-monolayer (SAM) process

Continuous electroless deposition of a 10-nm thick layer of Cu was successfully performed on a SiO₂/Si substrate coated with a 3-nm Au catalytic layer. The Au catalytic layer was formed by a self-assembled monolayer (SAM) process terminated with NH₂ headgroups, upon which negatively charged Au particles were deposited via electrostatic interaction with the positively charged NH₂-SAM. The Au and NH₂-SAM layers were analyzed by X-ray photoelectron spectroscopy (XPS) and contact angle analysis. Atomic force microscopy, field emission scanning electron microscopy, and XPS revealed that the Cu layer formed by this electroless processes had good step-coverage, small grain size, and excellent adhesion to the substrate. The proposed process is a very promising method for fabrication of a conductive Cu seed layer in a 60-nm trench-pattern.