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991.
以金属钛为靶材、O2/N2/Ar混合气氛为溅射气体,在导电玻璃(ITO)表面磁控溅射一层薄膜,再经300-500℃退火处理制备了氮掺杂TiO2薄膜.采用X射线衍射(XRD)、X光电子能谱(XPS)、扫描电子显微镜(SEM)和紫外-可见吸收光谱等对薄膜的微观结构、光学特性和光电化学性能等进行了研究.进而采用化学沉积的方法在TiO2-xNx薄膜表面沉积上一层多孔NiO薄膜,研究表明,制备的ITO/TiO2-xNx/NiO双层薄膜具有明显的光电致色特性,400℃退火处理的氮掺杂TiO2薄膜具有最高的光电流响应,经氙灯照射1h后,薄膜从无色变成棕色,500nm波长处光透过率从79.0%下降至12.6%. 相似文献
992.
脉冲激光法制备修饰纳米Eu_2O_3/聚苯胺导电杂化薄膜 总被引:1,自引:0,他引:1
采用聚焦脉冲激光法(PLA-IT/SFL)制备修饰纳米Eu2O3/聚苯胺有机溶胶及其杂化薄膜材料。考察了制备条件对修饰纳米Eu2O3/聚苯胺有机溶胶荧光性能的影响。TEM显示Eu2O3粒子粒径约为15 nm且其在聚苯胺中有较高的稳定性。荧光光谱表明该杂化薄膜材料在紫外光照射下发出强烈的红光,且荧光强度达2.53×105a.u。杂化薄膜材料的电导率为1.13×10-2S.cm-1。热分析表明该杂化薄膜比导电性聚苯胺(PAN-HCSA)薄膜具有更好的热稳定性。该杂化薄膜材料可望用于电致发光领域。 相似文献
993.
聚合物前驱体法制备立方相WO_3薄膜的光电化学性质 总被引:2,自引:0,他引:2
以(NH4)6W7O24·6H2O为钨源,聚乙二醇1000(PEG 1000)为配位聚合物,采用聚合物前驱体法制备了WO3薄膜,利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见(UV-Vis)吸收光谱等手段对其结构进行表征.采用循环伏安法、Mott-Schottky测试、瞬态光和稳态光电流谱等方法研究了WO3薄膜电极的光电化学性能.结果表明,制备的WO3薄膜为立方晶系,禁带宽度约为2.7eV.当热处理温度为450℃时,载流子浓度达到最大2.44×1022cm-3,平带电位为0.06V,在500W氙灯光源照射和1.2V偏压下,光电流密度为2.70mA·cm-2.进一步探讨了热处理温度对其光电性质的影响及其机理. 相似文献
994.
采用直流磁控溅射的方法在柔性不锈钢基底(50μm)上沉积纯钛薄膜,后在NaOH碱溶液中经水热法制备了非钛基大长径比的一维TiO2纳米线薄膜,并通过场发射扫描电子显微镜(FESEM)、X射线衍射(XRD)、透射电子显微镜(TEM)以及光电化学的方法对不锈钢基一维TiO2纳米线薄膜进行了表征.结果表明,纯钛薄膜的致密度、结晶性能以及与基底的结合强度均随衬底温度的升高而加强;在10mol·L-1NaOH浓度下,生长一维TiO2纳米线结构的适宜温度为130-150℃;TiO2纳米线长度达到几个微米,直径在10-30nm之间,并且相互交叉生长,构成一个三维网络结构.此外,在Na2SO4溶液中对TiO2纳米线薄膜进行了线性扫描和瞬态光电流测试,结果表明,一维TiO2纳米线薄膜电极较TiO2纳米颗粒电极表现出更优异的光电化学性能.这种磁控溅射与水热反应相结合的方法,为非钛异质基底上制备一维TiO2纳米线薄膜提供了新的思路. 相似文献
995.
N. Kumar V. Sharma N. Padha N. M. Shah M. S. Desai C. J. Panchal I. Yu. Protsenko 《Crystal Research and Technology》2010,45(1):53-58
Thin films of tin selenide (SnSe) were deposited on sodalime glass substrates, which were held at different temperatures in the range of 350‐550 K, from the pulverized compound material using thermal evaporation method. The effect of substrate temperature (Ts) on the structural, morphological, optical, and electrical properties of the films were investigated using x‐ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission measurements, and Hall‐effect characterization techniques. The temperature dependence of the resistance of the films was also studied in the temperature range of 80‐330 K. The XRD spectra and the SEM image analyses suggest that the polycrystalline thin films having uniform distribution of grains along the (111) diffraction plane was obtained at all Ts. With the increase of Ts the intensity of the diffraction peaks increased and well‐resolved peaks at 550 K, substrate temperature, were obtained. The analysis of the data of the optical transmission spectra suggests that the films had energy band gap in the range of 1.38‐1.18 eV. Hall‐effect measurements revealed the resistivity of films in the range 112‐20 Ω cm for films deposited at different Ts. The activation energy for films deposited at different Ts was in the range of 0.14 eV‐0.28 eV as derived from the analysis of the data of low‐temperature resistivity measurements. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
996.
M. G. Syed Basheer Ahamed V. S. Nagarethinam A. R. Balu A. Thayumanavan K. R. Murali C. Sanjeeviraja M. Jayachandran 《Crystal Research and Technology》2010,45(4):421-426
ZnSe films were deposited on glass substrates keeping the substrate temperatures, at room temperature (RT), 75, 150 and 250 °C. The films have exhibited cubic structure oriented along the (111) direction. Both the crystallinity and the grain size increased with increasing deposition temperature. A very high value of absorption co‐efficient (104 cm‐1) is observed. The band gap values decrease from a value of 2.94 eV to 2.69 eV with increasing substrate temperature. The average refractive index value is in the range of 2.39 – 2.41 for the films deposited at different substrate temperatures. The conductivity values increases continuously with temperature. Laser Raman spectra showed peaks at 140.8 cm‐1, 246.7 cm‐1and 204.5 cm‐1which are attributable to 2TA LO phonon and TO phonon respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
997.
Heterogeneous (on‐glass) protein crystal nucleation was separated from the bulk one in systems of thin protein solution layers, confined between two glass plates of custom made quasi two‐dimensional all‐glass cells, as well as by applying forced protein solution flow. Two commercial samples of hen‐egg‐white lysozyme, Seikagaku and Sigma were used as model proteins. Applying the classical technique of separation in time of nucleation and growth stages with protein solution layers of thickness 0.05 cm we found that the on‐glass crystal nucleation prevailed highly with Seikagaku HEWL, while on the opposite, bulk nucleated crystals represented the main crystal fraction in Sigma solution. Also using 0.05 cm solution layers nucleation rates were measured separately for the on‐glass and bulk protein crystals. The process was investigated by varying solution layer thicknesses as well, from 0.05 down to 0.01, 0.0065 and 0.002 cm. Studying the influence of the forced protein solution flow on HEWL crystal nucleation the classical double‐pulse technique was modified by separating the nucleation and growth stages not only in time, but simultaneously also in place. In this case we found that the ratio of on‐glass formed crystal nuclei to bulk nuclei depended on the flow velocity, but in different manner with Seikagaku HEWL and Sigma HEWL. A plausible explanation of our experimental results is that the bulk crystal nucleation occurs on foreign surfaces as well, e.g. on rests of source biomaterial, which are always present in the protein solutions. Moreover, biomaterial seems to be more active nucleant than glass. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
998.
利用电沉积硒气氛下后续退火的工艺制备出了高结晶质量的铜铟硒薄膜.通过X射线衍射、扫描电子显微镜、拉曼光谱、紫外-可见-近红外光谱和阻抗谱技术对退火后的铜铟硒薄膜进行表征,结果表明530 oC硒化退火后的铜铟硒薄膜具有四方的黄铜矿晶体结构,晶粒尺寸达到微米量级,光学带隙为0.98 eV,经过KCN溶液去除表面高导电性的铜硒化合物后铜铟硒薄膜的载流子浓度在1016 cm-3量级.利用硒化退火的铜铟硒薄膜作为光吸收层制备了结构为AZO/i-ZnO/CdS/CIS/Mo/glass的太阳能电池,在AM1.5光照条件下对其电流-电压特性测试后发现面积为0.2 cm2的电池可以达到0.96%的能量转换效率,并对限制电池效率的原因做出了初步的分析和讨论. 相似文献
999.
1000.